The invention discloses a light-emitting diode, and belongs to the technical field of photoelectron manufacturing. The light-emitting diode comprises a substrate, a buffer layer, a distribution Prague reflection mirror, an n type limiting layer, an active layer, a p type limiting layer, a GaP window layer and a p type ohmic contact layer which are overlapped in sequence. An n type ohmic contact electrode is arranged on the face, opposite to the buffer layer, of the substrate. A p face bonding wire electrode is arranged on the face, opposite to the GaP window layer, of the p type ohmic contact layer. C element heavily-doped GaP layers overlap between the GaP window layer and the p type ohmic contact layer. The p type ohmic contact layer is an indium tin oxide film. The p face bonding wire electrode is an Al electrode. The p type ohmic contact layer is made of high-transmittance conducting film indium tin oxide instead of Au / AuBe / Au, the electrode mainly made of metal AL is adopted as the p face bonding wire electrode, and therefore the gold consumption in the chip manufacturing process can be greatly lowered, and cost can be effectively and greatly reduced.