45results about How to "Reduce standing wave effect" patented technology

Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused reflection of lower film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

The objective of the present invention is to provide a resin for forming an upper antireflective film and a composition for forming an upper antireflective film that can reduce a standing wave effect satisfactorily and lead excellent solubility in an alkaline developer in lithography and a method for forming a resist pattern. Specifically, the resin for forming an upper antireflective film has at least one unit selected from a repeating unit represented by the formula (1) and a repeating unit represented by the formula (2), has a weight average molecular weight of 1,000 to 100,000 as measured by GPC method, and is soluble in an alkaline developer. (In the formulae (1) and (2), R1 to R14 independently represent a hydrogen atom, —OH, —COOH or —SO3H, provided that all of R1 to R7 or R8 to R14 do not represent a hydrogen atom in a molecule.)

The invention relates to a method for manufacturing a graphical sapphire substrate. The method comprises the following steps of: performing spin-coating treatment on a substrate to be photoetched; aligning and installing a mask plate and the substrate and installing the mask plate above the substrate according to set distance; performing projection exposure according to preset exposure conditions; performing developing treatment on the exposed substrate; performing roasting treatment on the developed substrate, and taking photoresist on the surface of the substrate as an etching mask; after setting the temperature and the vacuum degree of an etching cavity, the temperature of a shield cover and the control temperature of a cooling circulation mechanism, placing the roasted substrate on a slide glass base station in the etching cavity; introducing an etching gas for etching the substrate; controlling etching speed and quality by anode radio frequency source power and bias radio frequency source power; and simultaneously, cooling the slide glass base station by using the cooling circulation mechanism. By the method, the graphical substrate production efficiency is high and the luminous efficiency of a chip produced by using the substrate is high and stable.

The invention discloses a radio frequency device which is used for a plasma treatment device and comprises a radio-frequency power supply, a radio-frequency matcher and at least two groups of inductive coupling coils, wherein the proportion of the radio-frequency current in the inductive coupling coils is regulated by a current regulating device; and the current regulating device comprises a variable capacitor and an inductance component. The imaginary part of the total impedance including the current regulating device and the inductive coupling coils is inductive by reasonably setting the inductance value of the inductance component; and the impedance matching is realized by the traditional radio-frequency matcher comprising a plurality of capacitive components when the imaginary part of the total impedance is inductive, the matching process is simple and practicable, and the cost is also lower.

The invention provides a PECVD apparatus. The apparatus comprises a cavity, a wafer carrier, a plurality of radio frequency electrodes, a transmission device and a lifting device. The cavity is provided with a gas inlet and a gas outlet, and is also provided with a first transmission hole and a second transmission hole; the wafer carrier includes a plurality of carrying plates vertically arranged in a spaced manner along a fore-and-aft direction, and the wafer carrier can vertically move between an upper portion position and a lower portion position in a reaction chamber; and the radio frequency electrodes are arranged at the top of the reaction chamber and are perpendicular to the top surface, the radio frequency electrodes are arranged in a spaced manner along a fore-and-aft direction, and the radio frequency electrodes are correspondingly inserted into a space between adjacent carrying plates when the wafer carrier is positioned in the upper position of the reaction chamber. The PECVD apparatus has the advantages of productivity increase, occupied area reduction, processing difficulty and cost reduction, weakening of the standing wave effect on the radio frequency electrodes, and film surface quality improvement.

The present invention relates to a bottom anti-reflection coating composition which comprises a molecule glass compound comprising two or more hydroxy structures, a vinyl ethers compound comprising two or more vinyl ether sealed ends and a random photoacid generator. The composition can be used for photoetching processes such as a G wire, 365nm, 248nm, 193nm and the like. The light reflection effect can be effectively reduced, so that the resolution ratio of a photoetched pattern is improved and roughness of the wire edge is reduced; and moreover, an additional etching process does not need to be added to remove the bottom anti-reflection coating composition. In addition, the present invention also relates to a method for forming an erect image by using the anti-reflection coating composition.

Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by a variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor devices, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising a light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

The invention relates to a fluorine-containing polymer for photoresist, a top anti-reflection film composition containing the fluorine-containing polymer and application of the fluorine-containing polymer in the photoresist. The structural formula of the fluorine-containing polymer for the photoresist is CF2(CF3)CF2-[O-CF(CF3)CF2]n-O-CF(CF3)COO-R, wherein n is in a range of 1-8, and R is one or more selected from the group consisting of H, NH4 or other similar structures. On the basis of the weight of the whole polymer, the content a of a polymer component with n of no more than 1 is 0-12%; the content b of a polymer component with n of 2 is 55-80%; the content c of a polymer component with n of 3 is 15-30%; the content d of a polymer component with n of 4 is 0-15%; the content e of a polymer component with n of no less than 5 is 0-8%, wherein the sum of b and c is no less than 80%; and a, d and e are equal to 0 at the same time, or any one of a, d and e is equal to 0, or a, d and e are not equal to 0 at the same time. By controlling the content distribution of the polymer components with different molecular weights in the fluorine-containing polymer, the fluorine-containing polymer meeting specific composition requirements is obtained; and the fluorine-containing polymer is easy to degrade, low in toxicity and friendly to environment and can be used for preparing a top anti-reflection film with a low refractive index.

The invention relates to a fluorine-containing polymer for photoresist, a top anti-reflection film composition containing the fluorine-containing polymer and application of the fluorine-containing polymer in the photoresist. The structural formula of the fluorine-containing polymer for the photoresist is CF2(CF3)CF2-[O-CF(CF3)CF2]n-O-CF(CF3)COO-R, wherein n is in a range of 1-8, and R is one or more selected from the group consisting of H, NH4 or other similar structures. On the basis of the weight of the entire polymer, the content a of a polymer component having a number average molecular weight of less than 550 is 0-12%; the content b of a polymer component with a number-average molecular weight of 650-900 is 75%-90%; the content c of a polymer component with a number-average molecularweight of 980-1050 is 5%-15%; and the content d of a polymer component having a number average molecular weight of greater than 1150 is 0-10%, wherein a and d are equal to 0 at the same time, or any one of a and d is equal to 0, or a and d are not equal to 0 at the same time. By controlling the content distribution of the polymer components with different molecular weights in the fluorine-containing polymer, the fluorine-containing polymer meeting specific composition requirements is obtained; and the fluorine-containing polymer is easy to degrade, low in toxicity and friendly to environment,and can be used for preparing a top anti-reflection film with a low refractive index.

The present invention relates to a fluoropolymer for photoresist, a top anti-reflection film composition comprising the same, and its application in photoresist. The structural formula of the fluoropolymer for photoresist is as follows: CF2(CF3)CF2-[O-CF(CF3)CF2]n-O-CF(CF3)COO-R, wherein n is in the range of 1-8 , R is one or more of H, NH4 or other similar structures; based on the weight of the whole polymer, the content a of the polymer component with n≦1 is 0-12%, and the polymer group with n is 2 The content b of the component is 55-80%, the content c of the polymer component where n is 3 is 15-30%, the content d of the polymer component where n is 4 is 0-15%, and the polymer with n≥5 The content e of the component is 0-8%, and b+c≥80%, and a, d and e are 0 at the same time or any one of them is 0 or not 0 at the same time. In the present invention, by controlling the content distribution of polymer components with different molecular weights in the fluoropolymer, a fluoropolymer that meets the specific composition requirements of the present invention is obtained. The fluoropolymer is easy to degrade, has low toxicity, is environmentally friendly, and can be used for A top antireflection with a lower index of refraction is prepared.

The invention relates to a method for photoengraving a graphical sapphire substrate. The method comprises the following steps of: carrying out spin coating treatment on a substrate to be photoengraved; aligning and mounting a mask plate and the substrate and setting a projection ratio for projecting a graph of the mask plate to the substrate through a lens control module; regionally projecting and exposing in the projection ratio according to the preset exposure conditions; and developing and processing the substrate. The invention also relates to a system for photoengraving the graphical substrate, comprising a spin coating module for carrying out the spin coating treatment on the substrate to be photoengraved, a mask mounting module for aligning and mounting the mask plate and the substrate, the lens control module for setting the projection ratio for projecting the graph of the mask plate to the substrate, an exposure module for regionally projecting and exposing in the projection ratio according to the preset exposure conditions and a developing module for developing and processing the substrate. The method and the system provided by the invention photoengrave the graphical substrate through graphical projection in a non-contact mode and avoid the defects of low resolution, low production efficiency and low graphical consistency of the system for photoengraving and exposing the graphical substrate.

The invention discloses equipment and a process for preparing a back passivation solar cell. The equipment and the process for preparing the back passivation solar cell comprise a feeding cavity, a first process cavity, an isolation cavity, a second process cavity and a discharging cavity, valves are arranged among cavity bodies of the feeding cavity, the first process cavity, the isolation cavity, the second process cavity and the discharging cavity; heating plates are laid in the first process cavity and the second process cavity, a transmission roller is arranged in each cavity which is connected in sequence, a tray loaded with a silicon wafer is transmitted on the rollers, and the tray loaded with the silicon wafer passes through the feeding cavity, the first process cavity, the isolation cavity, the second process cavity and the discharging cavity in sequence. Through the mode, a tunneling silicon dioxide film layer and a doped amorphous / microcrystalline silicon film layer of the Topcon solar cell are prepared at the same time, the Topcon solar cell with higher efficiency can be prepared, ion damage is avoided, dynamic transmission is achieved, the uniformity of the film layers is improved, and the productivity is improved.

The invention provides a forming method of a through hole, which comprises the steps of: providing a substrate, wherein a medium layer is arranged on the substrate; coating a photoresistance layer on the medium layer; imaging the photoresistance in an exposure manner; developing the photoresistance layer to remove the photoresistance layer of the exposure layer; oxidizing the photoresistance layer; and etching the medium layer by using left photoresistance layer to form a through hole, and removing the left photoresistance layer. The forming method of the through hole solves the problem of wider burr structure generated by standing wave effect during the exposure of the photoresistance layer, ensures that the quality of the formed through hole is better, and is beneficial to the reduction of the production cost.

The invention discloses an inductive coupling plasma coil which comprises two groups of radio-frequency coils formed in a back-bending mode. A plane S-shaped parallel connection way is adopted in space structures of two groups of the radio-frequency coils, and two groups of the radio-frequency coils are strictly symmetrical in space distribution so that the directions of radio frequency current of the same coil position are the same. The invention further discloses an inductive coupling plasma injection device provided with the inductive coupling plasma coil. According to the inductive coupling plasma coil and the injection device, on one hand, standing wave effect in the coil can be reduced and uniformity of plasma can be increased, and on the other hand, impedance matching can be well achieved, coupling effect of the plasma is increased, the probability of chip pollution caused by sputtering of a quartz window due to over-high voltage is lowered, the uniform high-density plasma of a large area can be generated in a reaction cavity of a large area, and therefore requirements of laboratory rooms and industry in the micro electronics field are met.

The invention provides a method for forming a copper Damascus structure. The method comprises steps of depositing an interlayer dielectric and a sacrifice layer on a substrate, and graphing photosensitive resist; regarding the graphed photosensitive resist as a mask, etching the interlayer dielectric and the sacrifice layer and forming a metal interconnection line groove; depositing a barrier layer and a metal interconnection line in the groove sequentially; and removing excess copper, the sacrifice layer and the barrier layer through the chemical mechanical planarization process and finally forming the copper Damascus structure. Therefore, by the aid of the method, the sacrifice layer is deposited on the interlayer dielectric, a prior dielectric anti-reflection coating is replaced, the standing wave effect of the photosensitive resist is reduced, and the lithographic performance is improved. The sacrifice layer serves as a sacrifice layer of the etching process, the loss of the interlayer dielectric in the copper Damascus structure is reduced, the thickness of the metal interconnection line is increased, is stable and can be controlled, and the controllability and the stability of wafer electrical properties can be improved.

Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

The invention provides a photoetching method for improving the adhesion degree of a photoresist and a substrate, and relates to the technical field of photoetching processes. The photoetching method for improving the adhesion degree of the photoresist and the substrate comprises the following steps: baking the substrate; carrying out glue homogenizing treatment on the baked substrate; carrying outexposure treatment on the substrate subjected to glue uniformization; carrying out exposure and drying on the exposed substrate; standing and cooling the substrate which is dried after exposure; anddeveloping the substrate. According to the photoetching method provided by the invention, a substrate surface tackifier does not need to be used, and the adhesion degree between the substrate and thephotoresist can be effectively improved by the baking of the substrate before homogenizing of the photoresist, the baking after exposure and the standing and cooling after baking, so that the processrequirement is met, and an equipment module does not need to be additionally added.

Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of the bottom film layer or substrate and reduce standing waves caused by variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor device, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising the light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

The objective of the present invention is to provide a resin for forming an upper antireflective film and a composition for forming an upper antireflective film that can reduce a standing wave effect satisfactorily and lead excellent solubility in an alkaline developer in lithography and a method for forming a resist pattern. Specifically, the resin for forming an upper antireflective film has at least one unit selected from a repeating unit represented by the formula (1) and a repeating unit represented by the formula (2), has a weight average molecular weight of 1,000 to 100,000 as measured by GPC method, and is soluble in an alkaline developer. (In the formulae (1) and (2), R1 to R14 independently represent a hydrogen atom, —OH, —COOH or —SO3H, provided that all of R1 to R7 or R8 to R14 do not represent a hydrogen atom in a molecule.)

The invention provides a PECVD apparatus. The apparatus comprises a cavity, a wafer carrier, a plurality of radio frequency electrodes, a transmission device and a lifting device. The cavity is provided with a gas inlet and a gas outlet, and is also provided with a first transmission hole and a second transmission hole; the wafer carrier includes a plurality of carrying plates vertically arranged in a spaced manner along a fore-and-aft direction, and the wafer carrier can vertically move between an upper portion position and a lower portion position in a reaction chamber; and the radio frequency electrodes are arranged at the top of the reaction chamber and are perpendicular to the top surface, the radio frequency electrodes are arranged in a spaced manner along a fore-and-aft direction, and the radio frequency electrodes are correspondingly inserted into a space between adjacent carrying plates when the wafer carrier is positioned in the upper position of the reaction chamber. The PECVD apparatus has the advantages of productivity increase, occupied area reduction, processing difficulty and cost reduction, weakening of the standing wave effect on the radio frequency electrodes, and film surface quality improvement.

The present invention provides a composition for forming a top anti-reflection coating having such a low refractive index that it can be suitably used in pattern formation with an ArF excimer laser beam, and further the invention also provides a pattern formation method employing that composition. The top anti-reflection coating composition comprises a particular naphthalene compound, a polymer, and a solvent. The composition is used for forming a top anti-reflection coating provided on a photoresist layer. From the photoresist layer, a pattern can be formed by use of light in 160 to 260 nm.

The invention discloses an inductive coupling plasma coil which comprises two groups of radio-frequency coils formed in a back-bending mode. A plane S-shaped parallel connection way is adopted in space structures of two groups of the radio-frequency coils, and two groups of the radio-frequency coils are strictly symmetrical in space distribution so that the directions of radio frequency current of the same coil position are the same. The invention further discloses an inductive coupling plasma injection device provided with the inductive coupling plasma coil. According to the inductive coupling plasma coil and the injection device, on one hand, standing wave effect in the coil can be reduced and uniformity of plasma can be increased, and on the other hand, impedance matching can be well achieved, coupling effect of the plasma is increased, the probability of chip pollution caused by sputtering of a quartz window due to over-high voltage is lowered, the uniform high-density plasma of a large area can be generated in a reaction cavity of a large area, and therefore requirements of laboratory rooms and industry in the micro electronics field are met.

The invention provides a plasma processing device. The device comprises a first pole plate and a second pole plate which are oppositely arranged, wherein the first pole plate comprises a plurality of first sub-pole plates; gaps are arranged among the first sub-pole plates; the first sub-pole plates are respectively connected with a plasma excitation power supply; the second pole plate comprises a plurality of second sub-pole plates; the second sub-pole plates correspond to the first sub-pole plates one to one; gaps are arranged among the second sub-pole plates; and the shapes of the second sub-pole plates are the same as or similar to the shapes of the corresponding first sub-pole plates and the centers of the second sub-pole plates align with the centers of the first sub-pole plates. The device has the following advantages: the standing wave effects of the sub-pole plates can be reduced; and meanwhile, the problem of poorer uniformity of the airflow from the centers to the edges of the large-area pole plates can be avoided.

The invention provides a plasma processing device. The device comprises a first pole plate and a second pole plate which are oppositely arranged, wherein the first pole plate comprises a plurality of first sub-pole plates; gaps are arranged among the first sub-pole plates; the first sub-pole plates are respectively connected with a plasma excitation power supply; the second pole plate comprises a plurality of second sub-pole plates; the second sub-pole plates correspond to the first sub-pole plates one to one; gaps are arranged among the second sub-pole plates; and the shapes of the second sub-pole plates are the same as or similar to the shapes of the corresponding first sub-pole plates and the centers of the second sub-pole plates align with the centers of the first sub-pole plates. The device has the following advantages: the standing wave effects of the sub-pole plates can be reduced; and meanwhile, the problem of poorer uniformity of the airflow from the centers to the edges of the large-area pole plates can be avoided.

Disclosed are a light absorbent agent polymer for organic anti-reflective coating which can prevent diffused light reflection of bottom film layer or substrate and reduce standing waves caused by a variation of thickness of the photoresist itself, thereby, increasing uniformity of the photoresist pattern, in a process for forming ultra-fine patterns of photoresist for photolithography by using 193 nm ArF among processes for manufacturing semiconductor devices, and its preparation method. Also, the present invention discloses an organic anti-reflective coating composition comprising a light absorbent agent polymer for the organic anti-reflective coating and a pattern formation process using the coating composition.

Provided is a reflector topological structure-based acoustochemical treatment device for attenuating the standing wave effect. The acoustochemical treatment device includes an acoustochemical reactionvessel, wherein ultrasonic arrays are adhered to a bottom surface A of the acoustochemical reaction vessel and two side surfaces B and C, which are arranged perpendicular to the bottom surface A andintersect the bottom surface A, of the acoustochemical reaction vessel; ultrasonic radiation surfaces are formed by the bottom surface A and the two side surfaces B and C, and reflectors are installedon three ultrasonic reflection surfaces F, D and E which are arranged opposite to the three ultrasonic radiation surfaces A, B and C; the reaction vessel can be made according to the height of the reflector topological structure so as to radiate waves with an integral multiple of a quarter of the wavelength of ultrasonic waves, so that the wave loop of a standing wave which spreads in the direction of the ultrasonic radiation is overlapped with the wave; a liquid level sensor is installed inside the reaction vessel, and a single-chip microcomputer is used for controlling switching valves of aliquid inlet and liquid outlet of the reaction vessel and controlling the volume of reaction liquid in the sealed reaction vessel and the ultrasonic processing time. Through the reflector topologicalstructure-based acoustochemical treatment device for attenuating the standing wave effect, the intensity and distribution of a sound field in the reaction vessel can be improved obviously, the standing wave effect can be attenuated effectively, and the efficient treatment of the reaction liquid or to-be-processed products can be achieved.

Systems and methods for active control of radial etch uniformity are described. One of the methods includes generating a radio frequency (RF) signal having a fundamental frequency and generating another RF signal having a harmonic frequency. The harmonic frequency, or a phase, or a parameter level, or a combination thereof of the other RF signal are controlled to control harmonics of RF plasma sheath within a plasma chamber to achieve radial etch uniformity.