Plane Faraday screening system of radio frequency inductive coupled plasma source

A Faraday shielding and plasma source technology, applied in the direction of plasma and electrical components, can solve problems such as instantaneous impedance mismatch, difficulty in discharge breakdown, discharge instability, etc., and achieve small antenna current standing wave effect and sputtering Small pollution and good angular uniformity

Inactive Publication Date: 2009-08-26
DALIAN UNIV OF TECH
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Problems solved by technology

[0017] The purpose of the present invention is to provide a planar Faraday shielding system for radio frequency inductively coupled plasma sources, which can suppress the sputtering on the inner surface of the coupling window in the radio frequency inductively coupled plasma etching device, and solve the discharge breakdown after the capacitive coupling is blocked Difficult problems, on this basis, solve the problems of pulse process and electronegative gas discharge related to capacitive coupling, instantaneous impedance mismatch, discharge instability and other problems

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  • Plane Faraday screening system of radio frequency inductive coupled plasma source
  • Plane Faraday screening system of radio frequency inductive coupled plasma source
  • Plane Faraday screening system of radio frequency inductive coupled plasma source

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Embodiment Construction

[0032] The specific implementation manners of the present invention will be described in detail below in combination with technical solutions and accompanying drawings.

[0033] Such as figure 1 As shown, the energy generated by the RF power supply 1 reaches the RF coupling antenna 3 through the impedance matching device 2, and the variable capacitor C is adjusted 1 、C 2 ( Figure 2a ) and C 3 Minimize the reflected power. Faraday shield 5 to ground ( image 3 ), the capacitive coupling current driven by the RF antenna voltage reaches the ground through the Faraday shield 5, and the capacitive coupling inside the plasma is blocked. The Faraday shield adopts a crack structure, and the radio frequency antenna current can pass through the crack to generate an alternating magnetic field in the vacuum chamber, and the vortex electric field generated by the changing magnetic field accelerates the discharge of electron ionized neutral particles.

[0034] Faraday shielding struc...

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Abstract

The invention discloses a plane Faraday shielding system for restraining the parasitic capacitive coupling during discharge of the RF inductive coupling. The characteristic is that it's composed of two parts, which is embedded in the plane Faraday shielding and embedded ignition breakdown. The Faraday shield has a type of two-piece separations with a comb-shaped structure in the crack of metal pieces. The breakdown voltage is induced by the coupling antenna, and set to the ignition electrode through RF resonance and network-controlling. An unbalanced magnetron configuration composed of a group of permanent magnets enhances ignition and discharge, and transports plasma to the discharge zone.

Description

technical field [0001] The invention relates to the radio frequency inductively coupled plasma source technology used in the etching process of large-scale microelectronic integrated circuit chips, which uses plane Faraday shielding to suppress or reduce the parasitic capacitive coupling in the radio frequency inductively coupled discharge, and solves the problem of plasma etching of microelectronic chips. Dielectric coupling window sputtering in the etching process, electronegativity discharge instability, and instantaneous impedance mismatch of pulse discharge. Background technique [0002] RF inductively coupled plasma (ICP) source is an important high-density plasma source, which has been widely used in the plasma etching process of deep submicron / nano microelectronic integrated circuit chips. On the antenna of the ICP source, there are both RF currents and RF voltages. The former generates a vortex electric field that accelerates electrons through inductive coupling, a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H05H1/46H05H1/24
Inventor 丁振峰
Owner DALIAN UNIV OF TECH
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