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Fluorine-containing polymer for photoresist, top anti-reflection film composition containing fluorine-containing polymer and application of fluorine-containing polymer in photoresist

An anti-reflection film and polymer technology, applied in photosensitive materials for optomechanical equipment, optics, optomechanical equipment, etc., can solve problems such as processability, film-forming refractive index or insufficient raw material cost, and avoid standing Effect of wave effect, low toxicity, and low cost of raw materials

Active Publication Date: 2020-12-04
GANSU HUALONG SEMICON MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although the fluorine-containing polymers used for the top anti-reflection film in the above-mentioned prior art can be used to form the top anti-reflection film for lithography, they still have certain deficiencies in processability, film formation, refractive index or raw material cost.

Method used

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  • Fluorine-containing polymer for photoresist, top anti-reflection film composition containing fluorine-containing polymer and application of fluorine-containing polymer in photoresist
  • Fluorine-containing polymer for photoresist, top anti-reflection film composition containing fluorine-containing polymer and application of fluorine-containing polymer in photoresist
  • Fluorine-containing polymer for photoresist, top anti-reflection film composition containing fluorine-containing polymer and application of fluorine-containing polymer in photoresist

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preparation example Construction

[0040] Preparation of perfluoropolyether carboxylic acid:

[0041] First add 50ml of acetonitrile and 50ml of tetraethylene glycol dimethyl ether into a 1L polymerization kettle, then add 5g of catalyst KF into the polymerization kettle, stir and mix evenly, replace with high-purity nitrogen three times, and pump negative pressure to -0.1MPa , cooled to the set temperature of 0°C, and 50g of hexafluoropropylene oxide was introduced. Timed feeding (50g / h) was adopted to control the reaction process, and the temperature was controlled between 0 and 10°C. After adding hexafluoropropylene oxide to 1000g, return to normal pressure, after the completion of the reaction, keep stirring for two hours, stop stirring, return to room temperature, and obtain the mixture.

[0042] The mixture is layered, the reaction product in the lower layer is separated by centrifugation and filtration, and the reaction product is added to the distillation device. Perfluoropolyetheryl fluoride with a p...

Embodiment 1

[0048] The above-mentioned perfluoropolyether carboxylic acids with different degrees of polymerization are mixed, and the mixing ratio is as follows: by weight, 10% perfluoropolyether carboxylic acid A, 66% perfluoropolyether carboxylic acid B, 19% perfluoropolyether carboxylic acid Ether carboxylic acid C, 1% perfluoropolyether carboxylic acid D, 4% perfluoropolyether carboxylic acid E. The perfluoropolyether carboxylic acid was thus obtained, the specific composition of which is shown in Table 1.

Embodiment 2

[0050] The above-mentioned perfluoropolyether carboxylic acids with different degrees of polymerization are mixed, and the mixing ratio is as follows: by weight, 4% perfluoropolyether carboxylic acid A, 58% perfluoropolyether carboxylic acid B, 28% perfluoropolyether carboxylic acid Ether carboxylic acid C, 8% perfluoropolyether carboxylic acid D, 2% perfluoropolyether carboxylic acid F. The perfluoropolyether carboxylic acid was thus obtained, the specific composition of which is shown in Table 1.

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Abstract

The invention relates to a fluorine-containing polymer for photoresist, a top anti-reflection film composition containing the fluorine-containing polymer and application of the fluorine-containing polymer in the photoresist. The structural formula of the fluorine-containing polymer for the photoresist is CF2(CF3)CF2-[O-CF(CF3)CF2]n-O-CF(CF3)COO-R, wherein n is in a range of 1-8, and R is one or more selected from the group consisting of H, NH4 or other similar structures. On the basis of the weight of the whole polymer, the content a of a polymer component with n of no more than 1 is 0-12%; the content b of a polymer component with n of 2 is 55-80%; the content c of a polymer component with n of 3 is 15-30%; the content d of a polymer component with n of 4 is 0-15%; the content e of a polymer component with n of no less than 5 is 0-8%, wherein the sum of b and c is no less than 80%; and a, d and e are equal to 0 at the same time, or any one of a, d and e is equal to 0, or a, d and e are not equal to 0 at the same time. By controlling the content distribution of the polymer components with different molecular weights in the fluorine-containing polymer, the fluorine-containing polymer meeting specific composition requirements is obtained; and the fluorine-containing polymer is easy to degrade, low in toxicity and friendly to environment and can be used for preparing a top anti-reflection film with a low refractive index.

Description

technical field [0001] The present invention relates to the technical field of top anti-reflection film for photoresist, in particular to a fluorine-containing polymer for preparing top anti-reflection film, a composition for preparing top anti-reflection film containing it, and the Top antireflection film for photoresist prepared from fluoropolymer or composition. Background technique [0002] Photolithography technology is a method of transferring the semiconductor circuit pattern on the photomask to the silicon wafer. By irradiating the photomask with laser or electron beam, the material properties of the photosensitive substance on the wafer are changed due to light sensitivity. In order to complete the process of pattern transfer, the existing photolithography technology is the most critical process unit in the manufacture of semiconductors, flat panel displays and other devices. However, there is a technical problem of light scattering in the existing photolithography...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004C07C51/58C07C51/04C07C59/315G03F7/09
CPCC07C51/04C07C51/58C07C59/315G03F7/004G03F7/091
Inventor 李永斌
Owner GANSU HUALONG SEMICON MATERIAL TECH CO LTD
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