Bottom anti-reflection coating composition based on molecule glass comprising multiple hydroxy structures and application thereof to photoetching

A bottom anti-reflection, molecular glass technology, used in photosensitive materials, optics, and optomechanical equipment for optomechanical equipment, etc. question

Active Publication Date: 2015-09-16
INST OF CHEM CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The process can also cause damage to the substrate, affecting the final performance of the device
Additionally, the extra step to remove BARC material increases lithography cost and operational complexity
[0004] Therefore, the problem to be solved urgently is how to provide a new type of bottom anti-reflective layer coating to effectively avoid the damage caused by plasma etching and other processes to the photoresist layer and substrate, and at the same time reduce the cost of photolithography and the complexity of process operation. sex

Method used

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  • Bottom anti-reflection coating composition based on molecule glass comprising multiple hydroxy structures and application thereof to photoetching
  • Bottom anti-reflection coating composition based on molecule glass comprising multiple hydroxy structures and application thereof to photoetching
  • Bottom anti-reflection coating composition based on molecule glass comprising multiple hydroxy structures and application thereof to photoetching

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0083] 1) Preparation of BARC material 1

[0084] 60mg (9.082×10 -5 mol) 2,2-bis(4-hydroxy-3,5-bis(3,4-dihydroxyphenyl)phenyl)propane (molecular weight 660.67g / mol) molecular glass compound (as shown in formula V below), 6mg PAG (N-hydroxynaphthalimide trifluoromethanesulfonic acid) (accounting for 10% of molecular glass compound quality), 6mg light absorber anthracene (accounting for 10% of molecular glass compound quality) three are mixed in test tube after weighing, Then add 0.3mL of 4mg / mL anti-acid diffusing agent trioctylamine (TOA) made with PGMEA solvent (TOA accounts for 2% of the mass of the acid generator), mix the above substances, add 0.7mL of PGMEA solvent, and stir ultrasonically for 1 hour Mix the above to form component a, and pipette 0.371mL (1.816×10 -3 mol, and the molecular glass compound molar ratio is 1:20) triethylene glycol divinyl ether (abbreviated as DVE-3, as shown in the following formula VI, molecular weight 202.25g / mol, density 0.99g / mL), diss...

Embodiment 2

[0096] The steps are basically the same as in Example 1, the only difference is that the photoresist for spin coating is 365 photoresist specially provided by Beijing Kehua Microelectronics Company for 365 exposure.

[0097] Figure 5It is the SEM picture of the 2 μm standard line width (period 1:1) obtained by the BARC1-365 glue system in this example after 365nm ultraviolet exposure, where picture a is the SEM picture obtained after direct coating of 365 glue and exposure, and picture b is the picture The partial cross-sectional view of the line width of a, from Figure b, it can be seen that the photoresist is directly spin-coated on the substrate after exposure without adding BARC material, due to the influence of reflected light and standing waves, etc., the photolithographic effect is not good; Figure c is The SEM image obtained after applying 365 glue on BARC1 and exposing it. Figure d is a partial cross-sectional view of the line width in figure c. It can be seen from f...

Embodiment 3

[0099] 1) Preparation of BARC material 2

[0100] 60mg (9.082×10 -5 mol) 2,2-bis(4-hydroxy-3,5-bis(3,4-dihydroxyphenyl)phenyl)propane (molecular weight 660.67g / mol) molecular glass compound (shown in formula V), 6mg PAG (N-hydroxynaphthalimide trifluoromethanesulfonic acid) (accounting for 10% of molecular glass compound quality), 6mg light absorber anthracene (accounting for 10% of molecular glass compound quality), mix in test tube after weighing, then add 0.3mL of 4mg / mL anti-acid diffusing agent TOA (TOA accounts for 2% of the mass of the acid generator) prepared with PGMEA solvent, mix the above substances, add 0.7mL PGMEA solvent, and stir ultrasonically for more than 1 hour to make it evenly mixed to form Component c, pipette 0.776mL (3.632×10 -3 mol, and the molecular glass compound molar ratio is 1:40) 1,4-cyclohexyldimethanol divinyl ether (as shown in the following formula VIII, molecular weight 196.29g / mol, density 0.919g / mL), dissolved in 1mL PGMEA Form compone...

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Abstract

The present invention relates to a bottom anti-reflection coating composition which comprises a molecule glass compound comprising two or more hydroxy structures, a vinyl ethers compound comprising two or more vinyl ether sealed ends and a random photoacid generator. The composition can be used for photoetching processes such as a G wire, 365nm, 248nm, 193nm and the like. The light reflection effect can be effectively reduced, so that the resolution ratio of a photoetched pattern is improved and roughness of the wire edge is reduced; and moreover, an additional etching process does not need to be added to remove the bottom anti-reflection coating composition. In addition, the present invention also relates to a method for forming an erect image by using the anti-reflection coating composition.

Description

technical field [0001] This invention relates to novel wet-developable bottom antireflective coatings. It specifically relates to a series of organic bottom anti-reflection layer polymers prepared from molecular glass compounds containing two or more hydroxyl structures and aliphatic or aromatic compounds containing two or more vinyl ether structures as basic raw materials. It can be developed in an aqueous alkaline developer without an additional etching step. Background technique [0002] The modern semiconductor industry requires the size of integrated circuits to be smaller and smaller, and the degree of integration is getting higher and higher. Due to the increasing demand for highly integrated semiconductor equipment, KrF (248nm) excimer lasers and ArF (193nm) excimer lasers are used as light sources. To improve the resolution of photolithographic patterns. However, using light with a shorter wavelength to image the photoresist will lead to increased reflection from ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/027G03F7/004G03F7/26
Inventor 杨国强彭晓曼许箭袁华王双青李沙瑜
Owner INST OF CHEM CHINESE ACAD OF SCI
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