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Fluorine-containing polymer for photoresist, top anti-reflection film composition containing fluorine-containing polymer, and application of fluorine-containing polymer in photoresist

An anti-reflection film and polymer technology, which is applied to photosensitive materials, optics, and opto-mechanical equipment for opto-mechanical equipment. Standing wave effect, good solution stability and film formation, and the effect of improving yield

Active Publication Date: 2020-12-04
GANSU HUALONG SEMICON MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although the fluorine-containing polymers used for the top anti-reflection film in the above-mentioned prior art can be used to form the top anti-reflection film for lithography, there are still certain deficiencies in processability, film formation, refractive index or raw material cost.

Method used

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  • Fluorine-containing polymer for photoresist, top anti-reflection film composition containing fluorine-containing polymer, and application of fluorine-containing polymer in photoresist
  • Fluorine-containing polymer for photoresist, top anti-reflection film composition containing fluorine-containing polymer, and application of fluorine-containing polymer in photoresist
  • Fluorine-containing polymer for photoresist, top anti-reflection film composition containing fluorine-containing polymer, and application of fluorine-containing polymer in photoresist

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preparation example Construction

[0035] Preparation of perfluoropolyether carboxylic acid:

[0036] First add 50ml of acetonitrile and 50ml of tetraethylene glycol dimethyl ether into a 1L polymerization kettle, then add 5g of catalyst KF into the polymerization kettle, stir and mix evenly, replace with high-purity nitrogen three times, and pump negative pressure to -0.1MPa , cooled to the set temperature of 0°C, and 50g of hexafluoropropylene oxide was introduced. Timed feeding (50g / h) is adopted to control the reaction process, and the temperature is controlled between 0 and 10°C. After adding hexafluoropropylene oxide to 1000 g, return to normal pressure. After the reaction is complete, keep stirring for two hours, stop stirring, and return to room temperature to obtain a mixture.

[0037] The mixture is layered, the reaction product in the lower layer is separated by centrifugation and filtration, and the reaction product is added to the distillation device. Perfluoropolyetheryl fluoride with a purity o...

Embodiment 1

[0042] The above-mentioned perfluoropolyether carboxylic acids of different molecular weights are mixed, and the mixing ratio is as follows: by weight, 10% perfluoropolyether carboxylic acid A, 80% perfluoropolyether carboxylic acid B, 6% perfluoropolyether Carboxylic acid D, 4% perfluoropolyether carboxylic acid E. The perfluoropolyether carboxylic acid was thus obtained, the specific composition of which is shown in Table 1.

Embodiment 2

[0044] The above-mentioned perfluoropolyether carboxylic acids of different molecular weights are mixed, and the mixing ratio is as follows: by weight, 5% perfluoropolyether carboxylic acid A, 85% perfluoropolyether carboxylic acid B, 8% perfluoropolyether Carboxylic acid D, 2% perfluoropolyether carboxylic acid F. The perfluoropolyether carboxylic acid was thus obtained, the specific composition of which is shown in Table 1.

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Abstract

The invention relates to a fluorine-containing polymer for photoresist, a top anti-reflection film composition containing the fluorine-containing polymer and application of the fluorine-containing polymer in the photoresist. The structural formula of the fluorine-containing polymer for the photoresist is CF2(CF3)CF2-[O-CF(CF3)CF2]n-O-CF(CF3)COO-R, wherein n is in a range of 1-8, and R is one or more selected from the group consisting of H, NH4 or other similar structures. On the basis of the weight of the entire polymer, the content a of a polymer component having a number average molecular weight of less than 550 is 0-12%; the content b of a polymer component with a number-average molecular weight of 650-900 is 75%-90%; the content c of a polymer component with a number-average molecularweight of 980-1050 is 5%-15%; and the content d of a polymer component having a number average molecular weight of greater than 1150 is 0-10%, wherein a and d are equal to 0 at the same time, or any one of a and d is equal to 0, or a and d are not equal to 0 at the same time. By controlling the content distribution of the polymer components with different molecular weights in the fluorine-containing polymer, the fluorine-containing polymer meeting specific composition requirements is obtained; and the fluorine-containing polymer is easy to degrade, low in toxicity and friendly to environment,and can be used for preparing a top anti-reflection film with a low refractive index.

Description

technical field [0001] The present invention relates to the technical field of top anti-reflection film for photoresist, in particular to a fluorine-containing polymer for preparing top anti-reflection film, a composition for preparing top anti-reflection film containing it, and the Top antireflection film for photoresist prepared from fluoropolymer or composition. Background technique [0002] Photolithography technology is a method of transferring the semiconductor circuit pattern on the photomask to the silicon wafer. The photomask is irradiated by laser or electron beam, so that the photosensitive substance on the wafer will change its material properties due to light sensitivity. , so as to complete the process of pattern transfer, the existing photolithography technology is the most critical process unit in the manufacture of semiconductors, flat panel displays and other devices. However, there is a technical problem of light scattering in the existing photolithograph...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/004G03F7/09C07C59/135
CPCG03F7/004G03F7/091C07C59/135C08G65/332
Inventor 李永斌
Owner GANSU HUALONG SEMICON MATERIAL TECH CO LTD
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