PECVD apparatus

Abstract

The invention provides a PECVD apparatus. The apparatus comprises a cavity, a wafer carrier, a plurality of radio frequency electrodes, a transmission device and a lifting device. The cavity is provided with a gas inlet and a gas outlet, and is also provided with a first transmission hole and a second transmission hole; the wafer carrier includes a plurality of carrying plates vertically arranged in a spaced manner along a fore-and-aft direction, and the wafer carrier can vertically move between an upper portion position and a lower portion position in a reaction chamber; and the radio frequency electrodes are arranged at the top of the reaction chamber and are perpendicular to the top surface, the radio frequency electrodes are arranged in a spaced manner along a fore-and-aft direction, and the radio frequency electrodes are correspondingly inserted into a space between adjacent carrying plates when the wafer carrier is positioned in the upper position of the reaction chamber. The PECVD apparatus has the advantages of productivity increase, occupied area reduction, processing difficulty and cost reduction, weakening of the standing wave effect on the radio frequency electrodes, and film surface quality improvement.

Description

technical field [0001] The invention relates to the field of plasma technology, in particular to a PECVD (Plasma Enhanced Chemical Vapor Deposition) equipment. Background technique [0002] With the continuous development of plasma (Plasma) technology, plasma devices have been widely used in the manufacturing process of integrated circuits (IC) or photovoltaic (PV) products. , referred to as CCP) device discharge principle is simple, compared with ECR (electron cyclotron resonance plasma), ICP (inductively coupled plasma) generated plasma is more uniform, so it has been widely used in the PV industry. [0003] The flat-plate PECVD equipment used in the manufacturing process of photovoltaic crystalline silicon products is mainly divided into direct method and indirect method according to the different film forming methods. Both direct and indirect methods have advantages and disadvantages. The direct method forms a dense film, which can realize surface passivation and bulk ...

AI Technical Summary

Problems solved by technology

[0006] First of all, the particles generated during the process, or the particles peeled off from the upper electrode after long-term operation, will fall on the film-forming surface, affecting the appearance and quality of the cell;

[0007] Secondly, in order to obtain greater production capacity, the area of ​​the carrier plate in this method is relatively large, and generally dozens or even hundreds of solar cells can be placed, so the equipment occupies a large area and is difficult to maintain;

[0008] Third, in order to obtain greater production capacity, the size of the equipment continues to increase, Image 6 The size of the upper and lower plates of the shown CCP device will also increase accordingly, which will increase the standing wave effect on the plate, and will lead to the deterioration of the airflow uniformity in the middle and edge of the plate, which will affect the process bad effect

In addition, the increase in the size of equipment and parts increases the cost of raw materials and processing costs and difficulties

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