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Method and system for photoengraving graphical sapphire substrate

A patterned sapphire and lithography system technology, which is applied in the field of sapphire substrate production, can solve the problems of low productivity, low pattern consistency, and low resolution of lithography exposure system, so as to avoid damage, process repeatability and stability sex enhancing effect

Inactive Publication Date: 2011-06-08
长治虹源科技晶体有限公司
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Problems solved by technology

[0003] The technical problem to be solved by the present invention is to provide a non-contact and graphic projection method for the defects of low resolution, low productivity, and low pattern consistency of the photolithography exposure system of the prior art patterned sapphire substrate. Lithographic method and system for sapphire substrate

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  • Method and system for photoengraving graphical sapphire substrate

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Embodiment Construction

[0026] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0027] exist figure 1 The flowchart of the first preferred embodiment of the photolithography method of the patterned sapphire substrate of the present invention shown; The engraved substrate is subjected to glue leveling treatment; then to the next step 102, the mask plate is aligned with the substrate and installed, and the projection ratio of the graphic projection of the mask plate onto the substrate is set by the lens control group ; Then go to the next step 103 , perform partitioned projection exposure according to the projection ratio according to the preset exposure conditions; then go to ...

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Abstract

The invention relates to a method for photoengraving a graphical sapphire substrate. The method comprises the following steps of: carrying out spin coating treatment on a substrate to be photoengraved; aligning and mounting a mask plate and the substrate and setting a projection ratio for projecting a graph of the mask plate to the substrate through a lens control module; regionally projecting and exposing in the projection ratio according to the preset exposure conditions; and developing and processing the substrate. The invention also relates to a system for photoengraving the graphical substrate, comprising a spin coating module for carrying out the spin coating treatment on the substrate to be photoengraved, a mask mounting module for aligning and mounting the mask plate and the substrate, the lens control module for setting the projection ratio for projecting the graph of the mask plate to the substrate, an exposure module for regionally projecting and exposing in the projection ratio according to the preset exposure conditions and a developing module for developing and processing the substrate. The method and the system provided by the invention photoengrave the graphical substrate through graphical projection in a non-contact mode and avoid the defects of low resolution, low production efficiency and low graphical consistency of the system for photoengraving and exposing the graphical substrate.

Description

technical field [0001] The invention relates to the field of manufacturing sapphire substrates, in particular to a photolithography method and system for patterning a sapphire substrate. Background technique [0002] At present, in the process of producing patterned sapphire substrates in most domestic enterprises, most of the lithography exposure systems use contact lithography machines. Due to the equal proportion of lithography transfer, the line width of the pattern is not high, and the pattern size is more than 2 μm. Low yield, low productivity, and poor pattern consistency lead to reduced yield. Contents of the invention [0003] The technical problem to be solved by the present invention is to provide a non-contact and graphic projection method for the defects of low resolution, low productivity, and low pattern consistency of the photolithography exposure system of the prior art patterned sapphire substrate. Photolithographic method and system for sapphire substra...

Claims

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Application Information

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IPC IPC(8): G03F7/20H01L21/027
Inventor 谢雪峰李明远郭爱华
Owner 长治虹源科技晶体有限公司
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