The invention relates to the technical field of
semiconductor targets, in particular to a
tungsten target
diffusion welding method and a target
assembly. The technical problems that a crack is prone to occurring when a
tungsten target is directly welded to a
copper alloy backing plate, and
diffusion welding is not prone to being conducted between the
tungsten target and an aluminum intermediate layer as well as between the aluminum intermediate layer and the
copper alloy existing in the prior art are solved. The
tungsten target diffusion welding method comprises the steps that firstly a weld face of the
tungsten target is plated with a layer of
titanium metal film to form a
titanium-plated
tungsten target, each of an upper weld face and a lower weld face of the aluminum intermediate layeris plated with a layer of
titanium metal film to form a titanium-plated aluminum intermediate layer, and a weld face of the
copper alloy backing plate is plated with a layer of
titanium metal film toform a titanium-plated
copper alloy backing plate; and then the titanium-plated tungsten target, the titanium-plated aluminum intermediate layer and the titanium-plated
copper alloy backing plate areassembled to form an
assembly body, wherein the titanium-plated aluminum intermediate layer is located between the titanium-plated tungsten target and the titanium-plated
copper alloy backing plate. According to the technical scheme provided by the tungsten target
diffusion welding method, occurring of the crack can be avoided, and
diffusion welding is easy.