To provide a very-low-cost and short-TAT connection structure superior in connection reliability in accordance with a method for three-dimensionally connecting a plurality of
semiconductor chips at a shortest wiring length by using a through-hole
electrode in order to realize a compact, high-density, and high-function
semiconductor system. The back of a
semiconductor chip is decreased in thickness up to a predetermined thickness through back-
grinding, a hole reaching a surface-layer
electrode is formed at a back position corresponding to a device-side external
electrode portion through
dry etching, a metallic deposit is applied to the sidewall of the hole and the circumference of the back of the hole, a metallic bump (protruded electrode) of another
semiconductor chip laminated on the upper side is deformation-injected into the through-hole by compression bonding, and the metallic bump is geometrically caulked and electrically connected to the inside of a through-hole formed in an LSI
chip. It is possible to realize a unique connection structure having a high reliability in accordance with the caulking action using the plastic flow of a metallic bump in a very-low-cost short-TAT process and provide a three-dimensional inter-
chip connection structure having a high practicability.