33results about How to "Reduce chipping rate" patented technology

The invention relates to a method for preparing a nano-oxide enhanced dental titanium-porcelain bonding porcelain, and specifically to a preparation method for a dental titanium porcelain. Bisque powder of the bonding porcelain prepared by the method of the present invention is borosilicate glass, and a nano-oxide material addition method is adopted to carry out enhancing. The bisque powder of the bonding porcelain comprises, by mass, 50-60% of SiO2, 0-5% of Al2O3, 10-15% of B2O3, 5-10% of Na2O, 5-10% of K2O, 0-3% of Li2O, 0-3% of CaO, 0-5% of BaO, and 0-1% of F. A modified additive comprises a composition comprising one or a plurality materials selected from ZrO2, TiO2, SiO2, Al2O3 and SnO2. The preparation method of the present invention comprises: firstly preparing bisque powder of a bonding porcelain; and then adopting an intermediate material technology, and adding a nano-oxide having a certain ingredient to the bisque powder of the bonding porcelain to carry out secondary synthesis. According to the present invention, with addition of the nano-oxide material, a thermal expansion coefficient of the bisque powder is adjusted, strength and toughness of the bonding porcelain are increased, and titanium / porcelain bonding strength is improved; and the prepared bonding porcelain has good chemical stability, and can be adopted as a porcelain restoration in clinic.

The invention provides a preparation method for a blue glass infrared cut-off filter. The method includes the steps that film system is selected according to transmittance and a preset transmittance of blue glass, and film coating is respectively carried out on two opposite surfaces of the blue glass by means of film materials according to the selected film system; a UV film is attached to the surface of one film; the blue glass is pasted to a cutting table of an ADT cutting machine through the UV film; the blue glass is cut at the cutting speed of 8 millimeters per second and at the revolving speed of 12000-18000 revolutions per minute. The method is achieved based on a blue glass film coating method, light splitting requirements of infrared cut-off filter can be met, the edge breakage rate of blue glass cutting can be effectively reduced through reasonable selection of blue glass cutting parameters, and thus the production yield of the blue glass infrared cut-off filter can be improved.

The invention discloses a diamond wire cutting circulation system, comprising a diamond wire cutting machine, a filtering device, a liquid infusion pipeline, a liquid storage tank, a cutting pad and a circulating fluid, wherein the cutting pad is an antibacterial cutting pad; the circulating fluid is produced by cutting The silicon powder, backing plate powder and weak acid cutting fluid are mixed and filtered by a filter device, which is a weak acid, low conductivity antibacterial circulating fluid. The circulation system of the present invention has high stability, low silicon wafer edge chipping rate, low diamond cutting line sticking rate and wire breaking rate, is not easy to breed bacteria to cause pollution and blockage, simplifies process and reduces cost, and has high promotion significance.

The invention relates to a docking platform for quartz rods, which includes a base; a first installation platform, the lower surface of which is connected to the base and can slide relative to the base in a first horizontal direction; the upper surface of the first installation platform is connected to the base The lower end of the first elastic element is connected, and the upper end of the first elastic element is used to connect the first quartz rod; the second installation platform, its lower surface is connected with the base, and the upper surface of the second installation platform is connected with the first The lower end of the two elastic elements, the upper end of the second elastic element is used to connect the second quartz rod, the second mounting platform is adjacent to the first mounting platform in the first horizontal direction, and the One end of the first quartz rod faces the second quartz rod. The quartz rod docking platform provided by the present invention can reduce the chipping probability during the docking process of the quartz rods, and ensure the docking quality of the quartz rods and the uniform light effect of the quartz rods.

The invention provides solar silicon wafer cutting mortar which comprises a polyethylene glycol cutting liquid, silicon carbide micropowder and a dispersing stabilizer, wherein the dispersing stabilizer comprises a modified carbamido polymer, and the ratio of the mass sum of the polyethylene glycol cutting liquid, the silicon carbide micropowder to the mass of the modified carbamido polymer is 1: (0.02-4%). The solar silicon wafer cutting mortar provided by the invention is low in sedimentation rate and high in stability. Under the premise of not reducing the water content of the mortar, the solar silicon wafer cutting mortar is used for continuously cutting a silicon wafer twice, so that the yield of the silicon wafer is improved. The invention further provides a preparation method of the solar silicon wafer cutting mortar.

The invention discloses an acid-pickling edge-shearing control method of non-oriented silicon steel. The controlling method includes that a gap set value and an overlap quantity set value of a circle shear are calculated according to a supplied material thickness, a product silicon content level, a circle shear blade diameter and a scrap shear guiding rate. Then, the circle shear shears the non-oriented silicon steel according to the gap set value and the overlap quantity set value. The acid-pickling edge-shearing controlling method of the non-oriented silicon steel obviously improves the precision of shearing parameter setting and improves shearing quality of the non-oriented silicon steels. Therefore, occurrence rates of belt-breaking and blade-fracturing are reduced.

The invention relates to a method and device for manufacturing a grinding wheel for chamfering silicon wafers: 1) A metal bond diamond grinding wheel in the shape of a disc is sintered by hot pressing and sintering; The surface shape of the outer cylinder of the metal bond diamond grinding wheel; 3) Use a specific shape of the carbide rolling wheel to roll out a trapezoidal groove on the outer cylindrical surface of the diamond grinding wheel; 4) Use the same shape as the carbide rolling wheel Electrode EDM for dressing trapezoidal grooves of diamond grinding wheels. The device is equipped with a rough machining carbide rolling wheel, a finishing carbide rolling wheel, a diamond grinding wheel dressing working electrode and a grinding wheel groove dressing working electrode to respectively manufacture and process the diamond grinding wheel. The invention effectively solves the problems that diamond abrasive grains are easy to fall off in the traditional preparation method of silicon wafer chamfering grinding wheel, the shape accuracy of the groove section of the grinding wheel is not high, the groove shape and spacing are inconsistent, and the arc at the bottom of the groove is difficult to form.

The invention discloses a preparation technology for porcelain teeth, and relates to the technical field of dental restoration. The preparation technology is technically characterized by comprising the steps of manufacturing a metal inner crown, carrying out sand blasting on the surface, carrying out heat treatment, carrying out surface cleaning, and sintering a ceramic outer crown so as to obtaina finished product of the porcelain tooth. According to the preparation technology, through a mode that the metal inner crown is subjected to sand blasting treatment and then is subjected to heat treatment, a metal oxide film is formed on the surface of the metal inner crown, so that the bonding strength between the ceramic outer crown and the metal oxide film is improved, and therefore the probability that the porcelain teeth are fractured is lowered.

The present invention provides a chip to be coated and a processing process thereof, and relates to the technical field of chip manufacturing. The process for processing the chip to be coated includesthe following steps: a chip is provided, the chip includes an upper surface and a lower surface disposed opposite to each other, the lower surface of the chip is provided with a silicon oxide layer,the lower surface of the chip is divided into a plurality of first sub-regions, and each of the first sub-regions includes a first intermediate region and a first edge region, a silicon oxide layer ofthe first intermediate region is removed, the first intermediate region is subjected to boron doping, aluminum doping, and aluminum layer removal, to form a first sub-region with a recessed first intermediate region, the first intermediate region is corroded, the corrosion depth is 3-8Mum, and the chip to be coated is obtained. The technical problems that a conventional process has high chippingrate after dicing, siliconized powder is scratched and the application failure rate after packaging is high are solved. The process for processing the chip to be coated is simple and convenient to operate, a device is simple, and an application prospect is wide.

The invention relates to a novel clamp for preventing broken edge and broken corner used in a silicon stick section cutter. The clamp comprises two guide rails (6), four slide blocks (2), four baffle plates (1) and four staff gauges (4), wherein the two guide rails are arranged on the left and on the right respectively; the two ends of each guide rail (6) are fixedly mounted on the fragment box (10) of the section cutter. Every two of the four slide blocks (2) are sleeved on the two sides of every two guide rails (6); each slide block has an L-shaped section and consists of a transverse blockand a vertical block, wherein the transverse block is sleeved on and fixedly connected with the guide rail (6); the four baffle plates (1) are fixedly connected on the inner sides of the vertical blocks of corresponding slide blocks (2) respectively; the four staff gauges (4) are fixedly connected at the lower section of the inner side of corresponding baffle plates (1) respectively. When in cutting operation, the section cutter adopts a mechanical method to block the two end faces of the silicon stick so that the silicon stick can not extend sideways before being cut off, thereby ensuring that the silicon stick is cut off instead of breaking off, thus preventing broken edge.

The invention relates to a method of cleaning a crystal silicon wafer cut by a diamond wire saw. The method comprises the following steps: (1)precleaning: (2) cleaning with a reagent; (3) rinsing; and (4) drying; according to the sequence of the working procedure steps, the treatment temperature is gradually raised step by step; the drying temperature in the step (4) is equal to or higher than 65 DEG C; each technological unit comprises a cleaning tank; the temperature of the cleaning tank of a first precleaning technological unit in the step (1) is 30-35 DEG C lower than the drying temperature; the temperature D-value of two adjacent cleaning tanks is equal to or lower than 10 DEG C; and the soaking time of a crystal silicon wafer in each cleaning tank is equal to or shorter than 210 s. According to the invention, proper cleaning technology, cleaning tank temperature and soaking time are selected to obtain the cleaning method suitable for the crystal silicon wafer cut by the diamond wire saw; and with adoption of the method, the crystal silicon wafer can be effectively cleaned, the edge breakage rate, crystal silicon wafer breakage rate and manufacture procedure loss can be reduced, and the technological time also can be shortened.