The invention discloses a light-emitting
diode with a variable pattern and a preparation method thereof. The
diode comprises an epitaxial
wafer, wherein an ITO film is evaporated on the upper surface of the epitaxial
wafer, the ITO film is provided with a plurality of light-emitting areas and
etching areas, each light-emitting area is correspondingly provided with a P-
surface electrode, the adjacent P-surface electrodes are insulated and separated, an insulating layer is deposited on the surface of each
etching area, and an N-face
electrode is evaporated on the end face of the side, away from the ITO film, of the epitaxial
wafer. The method is simple in structure and reasonable in step design, the prepared light-emitting
diode can be used independently, does not need to work in cooperation with a
reticle and can emit needed patterns, and the advantages of simple structure and low
power consumption are guaranteed while the
utilization rate of a
light source is improved; and meanwhile, the luminous pattern of the diode prepared by using the technical scheme has variability, and can be changed according to a distance between a reflection sighting
telescope and a target, and the practicability of the diode is relatively high.