The invention discloses an anisotropic magnetoresistive
permalloy buffer layer preparation method. The method comprises the steps that a substrate which is thoroughly cleaned is put into a vacuum cavity,
argon gas is provided in the whole process, a buffer layer is deposited by adopting the pulse
radio frequency as a
sputtering power source, then a NiFe layer is deposited, and finally a covering layer is deposited. The pulse
radio frequency technology is adopted, power is supplied to a target gun at intervals during thin film deposition, time is provided for migration of material atoms on the surface of the substrate due to pulse
radio frequency interval deposition, and the thin film flatness is improved, so that the crystalline degree of the thin film is enhanced, and the material AMR value is increased; by means of the pulse radio frequency deposition technology, the deposition atoms can sufficiently migrate on the surface of the substrate, the
surface flatness of the buffer layer is improved, growth of the NiFe thin
film structure can be better induced at normal temperature, and the crystalline grain
diameter is increased, so that the
permalloy thin film AMR value is increased, the coercive force is lowered, and the thin film sensitivity becomes better.