40results about How to "Increase emission current" patented technology

The electron source of field emission of Nano carbon tube includes a current conducting basal body, at least a Nano carbon tube, and a finishing coat. The current conducting basal body possesses a top portion. One end of the Nano carbon tube is connected to the top portion electrically; and the other end is extended out along the top portion. Being distributed and infiltrated on surface of Nano carbon tubes evenly, the finishing coat covers the said extended end. Work function of the finishing coat is lower than work function of the Nano carbon tube.

The invention belongs to a graphene sheet electron beam field emission cold cathode and a production method thereof. The cold cathode comprises a substrate, a metal film electrode on the substrate, graphene field emitters and insulated medium strengthening layers arranged between the graphene field emitters and the top layer. The production method comprises steps of processing of the substrate, preparation of a graphene thin film, setting of the metal film electrode, transferring of the graphene and making of a single-layer or multi-layer graphene sheet electron beam field emission cold cathode. The metal film electrode is set, the graphene is adopted as the emitter of the cold cathode, the emission end is made through cutting, extremely strong point effects are generated under an external applied electric field, and thus, the emission current can be improved, and the working voltage of the field emission cathode can be effectively reduced; and thus, the graphene sheet electron beam field emission cold cathode and the production method thereof have the advantages that the opening field and the threshold field of the sheet electron beam cold cathode can be effectively reduced, the emission current is large, the power is high, the electron beam emission stability is good, the size is small, the production process is simple, the production efficiency is high, consistency of device performance can be ensured, and industrialized production is facilitated.

The present invention relates to the field of semiconductor devices, in particular to a method for preparing a field emission transistor, a field emission transistor and equipment, comprising: preparing a base layer; wherein, a gate is provided on the base layer; and a conductive electrode is deposited on the base layer. layer; depositing a source electrode and a drain electrode at both ends of the conductive layer; etching the conductive layer to obtain an emission tip; wherein, the etching method is focused ion beam etching. The preparation method of the field emission transistor described in this application can realize an array type emission tip, which is beneficial to improve the overall emission current and current stability. And after focused ion beam etching, a smaller emission tip can be formed, and the local electric field enhancement effect is better.

The invention discloses a light-emitting backlight source of a single-interlink circular convex surface cathode multi-swallow-wing-arc gating structure. The light-emitting backlight source comprises avacuum sealing body and a getter accessory element located in the vacuum sealing body. The vacuum sealing body is composed of a front transparent hard glass plate, a rear transparent hard glass plateand narrow glass frame strips. An anode high-conductivity film layer, an anode silver thick line layer and a thin light-emitting layer are arranged on the front transparent hard glass plate, the anode high-conductivity film layer is connected with the anode silver thick line layer, and the thin light-emitting layer is manufactured on the anode high-conductivity film layer. The rear transparent hard glass plate is provided with a single-interlink circular convex surface cathode multi-swallow-wing-arc gating structure. The light-emitting backlight source has the advantages of stable manufacturing process, simple manufacturing structure and high light-emitting brightness.

The invention relates to a hollow cathode charge exchange method. The method comprises a step of constructing a simulation model of a hollow cathode, and calculating the C-V characteristic curve and main parameter of the hollow cathode, a step of determining multiple ground test equipment of the hollow cathode according to a preset space task, a step of carrying out ground test of the hollow cathode according to the parameter indexes of the ground test equipment, and a step of adjusting index requirements according to collected various working parameters of the hollow cathode in a ground test process until the working test of the hollow cathode is completed. According to the hollow cathode charge exchange method, under the condition of fixed power consumption, the working medium flow can be reduced, the emission current can be improved, the working efficiency of the hollow cathode is improved, in the same working medium flow and emitting current working conditions, the bias voltage and working power consumption can be reduced, the working index of the hollow cathode is raised to an international advanced level, the emission current, touch level voltage and other important parameters of the hollow cathode can be effectively improved, and the requirements of passive deorbit of a spacecraft is satisfied.

The invention discloses a field emission cathode and a preparation method and application thereof. The field emission cathode comprises a conductive substrate, a graphene layer and a molybdenum disulfide and / or tungsten disulfide nanosheet layer, wherein the graphene layer and the molybdenum disulfide and / or tungsten disulfide nanosheet layer are sequentially formed on the surface of the conductive substrate. The preparation method of the field emission cathode, disclosed by the invention comprises the step of forming the graphene layer on the surface of the conductive substrate and the step of carrying out electrophoresis on the surface of the conductive substrate to form the molybdenum disulfide and / or tungsten disulfide nanosheet layer. The field emission cathode disclosed by the invention has the advantages of low turn-on field, large emission current and high stability of emission current. By the preparation method of the field emission cathode, the performance stability of the field emission cathode is ensured, and the production cost of the field emission cathode is reduced.

The invention provides a preparation method of a carbon nano tube cathode and the carbon nano tube cathode obtained through the method. The preparation method includes the steps that a bonding agent layer is arranged on an electric conduction substrate in an electrophoretic deposition mode; a carbon nano tube thin film is arranged on the electric conduction substrate in an electrophoretic deposition mode, wherein the bonding agent layer is also deposited on the electric conduction substrate; in a vacuum or protective atmosphere environment, hot pressed sintering is conducted on the carbon nano tube thin film and the bonding agent layer, so that the carbon nano tube cathode is obtained. According to the carbon nano tube cathode and the preparation method thereof, the hot pressed sintering technology is adopted, the root portion of a carbon nano tube is embedded into a base body of a bonding agent under the action of pressure, so that firm combination is formed, meanwhile, the contact resistance of the carbon nano tube and the base body is lowered, hence, emission currents of the carbon nano tube are increased, and the current stability of the carbon nano tube is improved.