40results about How to "Increase emission current" patented technology

The invention relates to a carbon nanometer tube field emitting cathode and a manufacturing method thereof. The carbon nanometer tube field emitting cathode comprises a conductive substrate, a grapheme layer and a carbon nanometer tube layer, wherein the grapheme layer and the carbon nanometer tube layer are sequentially stacked on the conductive substrate. The theory ratio surface area of grapheme reaches up to 2600m<2> / g, the unique two-dimensional structure of the carbon nanometer tube field emitting cathode can conduct effective electric heat transmission, more excellent thermotics and electrics performance is obtained compared with a carbon nanometer tube, the grapheme layer is arranged between the conductive substrate and the carbon nanometer tube layer, the characteristics of the large grapheme ratio surface area and excellent conductive heat dissipation are brought into full play, adhesive force of the carbon nanometer tube layer can be improved, and an emission current and stability are improved.

The invention relates to the technical field of vacuum electronic devices, and discloses a double-grid control type cold cathode electron gun and a preparation method thereof. In accordance with the present invention, A simple, a new type of electron gun with long service life and excellent performance is provided, the cold cathode is used as the emission source of the vacuum electronic device, Asurface of the cold cathode is arrayed by a cathode grid, which can effectively weaken the electrostatic shielding effect of electron emitted by large area cold cathode material, the emission currentof large area cold cathode material is increased, At the same time, the surface of the cathode substrate is designed as a whole plane so as to not only avoid machining burr and other problems, improveedge effect and spark phenomenon, but also make the electric field distribution on the surface of cathode substrate flat, which is conducive to improving the uniformity of emission current density and achieving the purpose of large current emission, so the electron gun can be used in vacuum electron radiation components or devices that generate large current and high density electron beam.

Disclosed is an intelligent polarized reflection type photoelectric sensor which relates to the sensor field. The intelligent polarized reflection type photoelectric sensor comprises a detection system and a control system. A side of a 0-degree polarizing film and a side of a 90-degree polarizing film are provided with a reflective plate. A compensation transmitting tube cooperates with a light guide device. A side of the light guide device is provided with a photosensitive diode. An HALIOS signal conditioning module, a transmission parameter adjustment module and an I\O module are disposed in an HALIOS system. A power stabilizing circuit is connected with the HALIOS system. The HALIOS system is connected with a sensor output circuit. The transmission parameter adjustment module is connected with a transmission and compensation transmission circuit. A pre-amplification circuit is connected with the HALIOS signal conditioning module. According to the invention, characteristics of the sensor such as resistance to hard light, intelligentization, adaptive compensation of dust pollution environment, measurement of highly transparent objects and the like can be achieved.

The electron source of field emission of Nano carbon tube includes a current conducting basal body, at least a Nano carbon tube, and a finishing coat. The current conducting basal body possesses a top portion. One end of the Nano carbon tube is connected to the top portion electrically; and the other end is extended out along the top portion. Being distributed and infiltrated on surface of Nano carbon tubes evenly, the finishing coat covers the said extended end. Work function of the finishing coat is lower than work function of the Nano carbon tube.

The invention belongs to a graphene sheet electron beam field emission cold cathode and a production method thereof. The cold cathode comprises a substrate, a metal film electrode on the substrate, graphene field emitters and insulated medium strengthening layers arranged between the graphene field emitters and the top layer. The production method comprises steps of processing of the substrate, preparation of a graphene thin film, setting of the metal film electrode, transferring of the graphene and making of a single-layer or multi-layer graphene sheet electron beam field emission cold cathode. The metal film electrode is set, the graphene is adopted as the emitter of the cold cathode, the emission end is made through cutting, extremely strong point effects are generated under an external applied electric field, and thus, the emission current can be improved, and the working voltage of the field emission cathode can be effectively reduced; and thus, the graphene sheet electron beam field emission cold cathode and the production method thereof have the advantages that the opening field and the threshold field of the sheet electron beam cold cathode can be effectively reduced, the emission current is large, the power is high, the electron beam emission stability is good, the size is small, the production process is simple, the production efficiency is high, consistency of device performance can be ensured, and industrialized production is facilitated.

The invention discloses a three-dimensional VS2 / Zno composite nano-structure and a preparation method. The three-dimensional VS2 / Zno composite nano-structure comprises VS2 nano-sheet and ZnO nano-particles, the VS2 nano-sheet serves as a framework, the ZnO nano-particles are evenly distributed on the surface and the edge of the VS2 nano-sheet to form the VS2 / Zno composite nano-structure. The invention further provides a flexible reinforced PET (polyethylene terephthalate) substrate field electron emission cathode material based on three-dimensional VS2 / Zno composite nano-structure and a preparation method. The preparation method has the advantages of being low in cost, simple in preparation condition, high in complexity and the like. In addition, impurities are less. The three-dimensional VS2 / Zno composite nano-structure and the field electron emission cathode material are high in crystallinity, stable in structure and large in specific area, the edge is ultrathin, and excellent flexible field electron emission performance is achieved.

The invention provides a preparation method of a carbon nano tube cathode and the carbon nano tube cathode obtained through the method. The preparation method includes the steps that a bonding agent layer is arranged on an electric conduction substrate in an electrophoretic deposition mode; a carbon nano tube thin film is arranged on the electric conduction substrate in an electrophoretic deposition mode, wherein the bonding agent layer is also deposited on the electric conduction substrate; in a vacuum or protective atmosphere environment, hot pressed sintering is conducted on the carbon nano tube thin film and the bonding agent layer, so that the carbon nano tube cathode is obtained. According to the carbon nano tube cathode and the preparation method thereof, the hot pressed sintering technology is adopted, the root portion of a carbon nano tube is embedded into a base body of a bonding agent under the action of pressure, so that firm combination is formed, meanwhile, the contact resistance of the carbon nano tube and the base body is lowered, hence, emission currents of the carbon nano tube are increased, and the current stability of the carbon nano tube is improved.

The present invention relates to a TV set and picture display device. Said TV set comprises: (A) a display panel that includes a plurality of electron emitting parts and a screen used for displaying pictures by electron radiation. Each said electron emitting device comprises: electrode pairs; electric membrane, including a crack and composed of electric materials but carbon and disposed between the said electrodes and connected to them; and a carbonic deposit with carbon as its main component. The said carbonic group deposit is disposed in the crack and connected to the electric membrane, and it has space formed wherein, which is narrow than the crack. (B) A TV signal receiving circuit used for receiving TV signals and (C) a drive circuit used for displaying pictures according to the TV signal onto the screen.

The invention belongs to the field of crossing of a vacuum electronics technology and a novel carbon material technology and particularly relates to a graphene-based field emission cold cathode and apreparation method. The field emission cold cathode comprises a substrate and an emitter, wherein the substrate is taken as a conductive substrate and is a silicon wafer or a metal sheet; the emitteris a graphene film layer; the graphene film layer is in close contact with the substrate; the thickness of the graphene film layer is 20-180 microns; and the graphene film layer is formed by grapheneclusters of which the particle sizes are 15-45 microns. The graphene-based cold cathode provided by the invention can be prepared by using the method, is in an array form, has good performance advantages of a low starting electric field, a low threshold electric field and high emission current, and can be applied to the fields, such as field emission display (FED) as an excellent electronic source.

A thin-film edge field emitter device includes a substrate having a first portion and having a protuberance extending from the first portion, the protuberance defining at least one side-wall, the side-wall constituting a second portion. An emitter layer is disposed on the substrate including the second portion, the emitter layer being selected from the group consisting of semiconductors and conductors and is a thin-film including a portion extending beyond the second portion and defining an exposed emitter edge. A pair of supportive layers is disposed on opposite sides of the emitter layer, the pair of supportive layers each being selected from the group consisting of semiconductors and conductors and each having a higher work function than the emitter layer.

The invention relates to a process for producing an electron emission electrode (2) of an electron source, wherein the electron emission electrode has at least one emission tip (3) set up to release electrons into the environment, having the steps of a) provision of a parent body (1) made from a brittle material, b) mechanical and / or thermal surface working of the parent body to form the emissiontip, wherein brittle material is removed from the parent body at least around the emission tip. The invention also relates to an electron emission electrode of this kind and to a device having one ormore electron emission electrodes.

The invention discloses a light-emitting backlight source for a single-ring pyramid inclined plane cathode concave straight arc section gating structure. The light-emitting backlight source comprisesa vacuum sealing body and getter auxiliary elements located in the vacuum sealing body. The vacuum sealing body is composed of a front transparent hard glass plate, a rear transparent hard glass plateand narrow glass frame strips. An anode low-resistance membrane electric layer, an anode gray silver external connection layer and a thin light-emitting layer are arranged on the front hard glass plate, the anode low-resistance membrane electric layer is connected with the anode gray silver external connection layer, and the thin light-emitting layer is manufactured on the anode low-resistance membrane electric layer; and a single-ring pyramid inclined plane cathode concave straight arc section gating structure is arranged on the rear hard glass plate. The light-emitting backlight source hasthe advantages of being stable and reliable in manufacturing process and excellent in light-emitting brightness adjustability.

The invention belongs to a graphene sheet electron beam field emission cold cathode and a production method thereof. The cold cathode comprises a substrate, a metal film electrode on the substrate, graphene field emitters and insulated medium strengthening layers arranged between the graphene field emitters and the top layer. The production method comprises steps of processing of the substrate, preparation of a graphene thin film, setting of the metal film electrode, transferring of the graphene and making of a single-layer or multi-layer graphene sheet electron beam field emission cold cathode. The metal film electrode is set, the graphene is adopted as the emitter of the cold cathode, the emission end is made through cutting, extremely strong point effects are generated under an external applied electric field, and thus, the emission current can be improved, and the working voltage of the field emission cathode can be effectively reduced; and thus, the graphene sheet electron beam field emission cold cathode and the production method thereof have the advantages that the opening field and the threshold field of the sheet electron beam cold cathode can be effectively reduced, the emission current is large, the power is high, the electron beam emission stability is good, the size is small, the production process is simple, the production efficiency is high, consistency of device performance can be ensured, and industrialized production is facilitated.

The invention relates to a silicon carbide junction barrier Schottky diode suitable for a high-temperature environment, and belongs to the technical field of semiconductor devices. According to the device, a novel P + region injection layout structure is adopted on the basis of a traditional JBS device structure, the area of a Schottky contact region and Schottky junction current are increased, meanwhile, the area of a depletion region is increased through a strip-shaped pattern of the P + injection region, the current decline and power loss increase of a silicon carbide junction barrier Schottky diode at high temperature are reduced, and the performance of the device is improved. And the reverse breakdown voltage is prevented from being reduced after the Schottky region of the diode is increased, and the problems that the forward working current of the JBS device declines seriously and the power loss is obviously increased in a large-current and high-temperature working environment are solved.

Nano carbon tubes in mode of lain low are distributed on pole plate of field-emissive cathode. The preparation includes following steps: putting Nano carbon tubes to alcohol or other solvent, and mixing it round to prepare solution; dropping the solution obtained to the said pole plate of cathode; air drying the said solution on the pole plate naturally. Advantages are: simplifying technique, lowering cost, raising performance, and avoiding difficulty of arranging Nano carbon tubes vertically.

The invention provides an X-ray tube based on thermal emission of a LaB6 nano material and a mobile CT (computer tomography) scanner. The X-ray tube based on thermal emission of the LaB6 nano material comprises a positive electrode, a negative electrode and a tube shell, wherein the tube shell is used for supporting the positive electrode and the negative electrode and enables a working environment of the positive electrode and the negative electrode to be insulated from the outside world, thereby keeping the working environment to be vacuum; the negative electrode is made of the LaB6 nano material, and electrons of thermal emission bombard the positive electrode when the negative electrode is heated to the working temperature of the LaB6 nano material so as to generate X-rays. According to the technical solution of the invention, under the condition of acquiring the same emission current density, the working temperature of the negative electrode made of the LaB6 nano material is lower than that of a negative electrode of a tungsten filament by more than 1000 DEG C through manufacturing the negative electrode by adopting the LaB6 nano material, thereby reducing the evaporation rate of the negative electrode material. In addition, the emission current, the stability and the service life of the adopted thermal emission negative electrode X-ray tube are improved greatly.

The invention discloses a method for electromagnetic ultrahigh-voltage DC remote power transmission and distribution of an ocean controllable source. A power generator provides electric energy for thewhole method and is then is connected with a deck power-end large-power rectification device and an inversion device to provide an intermediate-frequency alternating current with an adjustable voltage, the voltage is converted to a ultrahigh-voltage direct current by a deck power-end boost transformer and the deck power-end rectification device, the electric energy loss is reduced to the minimumby a long-distance ultrahigh-voltage DC power transmission and distribution ocean cable and then the electric energy is converted to an ultrahigh-voltage alternating current to be transmitted to a reactor and an underwater transformation device by an underwater power-end large-power inversion device, the electric energy is converted to a low-voltage alternating current by an underwater transformation device and then is supplied to an underwater emitter rectification inversion unit for use. By the method, the electric energy loss of traditional long-distance AC power transmission is greatly reduced, the power and the efficiency of long-distance electric energy transmission are improved, the electric energy demand of an ocean controllable source electromagnetic emitter at the bottom of sea is effectively guaranteed, and meanwhile, the problem of three-phase unbalance is thoroughly solved.

The invention discloses a light-emitting backlight source of a single-interlink circular convex surface cathode multi-swallow-wing-arc gating structure. The light-emitting backlight source comprises avacuum sealing body and a getter accessory element located in the vacuum sealing body. The vacuum sealing body is composed of a front transparent hard glass plate, a rear transparent hard glass plateand narrow glass frame strips. An anode high-conductivity film layer, an anode silver thick line layer and a thin light-emitting layer are arranged on the front transparent hard glass plate, the anode high-conductivity film layer is connected with the anode silver thick line layer, and the thin light-emitting layer is manufactured on the anode high-conductivity film layer. The rear transparent hard glass plate is provided with a single-interlink circular convex surface cathode multi-swallow-wing-arc gating structure. The light-emitting backlight source has the advantages of stable manufacturing process, simple manufacturing structure and high light-emitting brightness.

The invention discloses a three-dimensional VS2 / Zno composite nano-structure and a preparation method. The three-dimensional VS2 / Zno composite nano-structure comprises VS2 nano-sheet and ZnO nano-particles, the VS2 nano-sheet serves as a framework, the ZnO nano-particles are evenly distributed on the surface and the edge of the VS2 nano-sheet to form the VS2 / Zno composite nano-structure. The invention further provides a flexible reinforced PET (polyethylene terephthalate) substrate field electron emission cathode material based on three-dimensional VS2 / Zno composite nano-structure and a preparation method. The preparation method has the advantages of being low in cost, simple in preparation condition, high in complexity and the like. In addition, impurities are less. The three-dimensional VS2 / Zno composite nano-structure and the field electron emission cathode material are high in crystallinity, stable in structure and large in specific area, the edge is ultrathin, and excellent flexible field electron emission performance is achieved.

The present invention relates to the field of semiconductor devices, in particular to a method for preparing a field emission transistor, a field emission transistor and equipment, comprising: preparing a base layer; wherein, a gate is provided on the base layer; and a conductive electrode is deposited on the base layer. layer; depositing a source electrode and a drain electrode at both ends of the conductive layer; etching the conductive layer to obtain an emission tip; wherein, the etching method is focused ion beam etching. The preparation method of the field emission transistor described in this application can realize an array type emission tip, which is beneficial to improve the overall emission current and current stability. And after focused ion beam etching, a smaller emission tip can be formed, and the local electric field enhancement effect is better.

The present invention relates to a high-density alternating current / direct current induced polarization system and a working method thereof, belonging to the field of geophysical instruments. The system comprises a measurement host, a multi-path electrode converter, a receiving cable, an emitting cable, a receiving electrode, an emitting electrode and a patch cord. The multi-path electrode converter comprises four interfaces. The receiving cable is completely separated from the emitting cable, and the receiving electrode is completely separated from the emitting electrode, the electromagneticcoupling problem of the emitting cable and the receiving cable and the problem of large signal drift of the receiving electrode are solved, it is avoided that a high-voltage emitting wire is too closeto a low-voltage receiving wire to cause high-voltage breakdown due to electric leakage of the emitting wire and cause damaging of an instrument; and moreover, compared to an unseparated cable, the high-density alternating current / direct current induced polarization system and the working method thereof can obviously improve the emitting current. The measurement system can effectively alternatingcurrent induced polarization measurement with high interference resisting and can perform conventional direct current induced polarization measurement so as to obviously improve the measurement efficiency and have an important practical value.

A system and method for fabricating a FED device is disclosed. The system and method provide for use of PECVD hydrogenation followed by nitrogen plasma treatment of the tip of the current emitter of the FED device. The use of this process greatly reduces the native oxides in the tip of the current emitter. Such native oxides function as undesirable insulators degrading current emission. By reducing the amount of oxides in the tip, this invention provides for an increase in the current emission of the FED device.

The invention relates to a carbon nanotube field emission cathode and a preparation method thereof. The carbon nanotube field emission cathode includes a conductive substrate and a graphene layer and a carbon nanotube layer stacked on the conductive substrate in sequence. The theoretical specific surface area of ​​graphene is as high as 2600m 2 / g, its unique two-dimensional structure can carry out effective electrothermal transmission, and has better thermal and electrical properties than carbon nanotubes. A graphene layer is set between the conductive substrate and the carbon nanotube layer to give full play to the specific surface area of ​​graphene. The characteristics of huge size and excellent conduction and heat dissipation can improve the adhesion of the carbon nanotube layer, improve the emission current and stability.

The invention relates to a hollow cathode charge exchange method. The method comprises a step of constructing a simulation model of a hollow cathode, and calculating the C-V characteristic curve and main parameter of the hollow cathode, a step of determining multiple ground test equipment of the hollow cathode according to a preset space task, a step of carrying out ground test of the hollow cathode according to the parameter indexes of the ground test equipment, and a step of adjusting index requirements according to collected various working parameters of the hollow cathode in a ground test process until the working test of the hollow cathode is completed. According to the hollow cathode charge exchange method, under the condition of fixed power consumption, the working medium flow can be reduced, the emission current can be improved, the working efficiency of the hollow cathode is improved, in the same working medium flow and emitting current working conditions, the bias voltage and working power consumption can be reduced, the working index of the hollow cathode is raised to an international advanced level, the emission current, touch level voltage and other important parameters of the hollow cathode can be effectively improved, and the requirements of passive deorbit of a spacecraft is satisfied.

The invention relates to the technical field of vacuum electronic devices, and discloses a double-gate control type cold cathode electron gun and a preparation method thereof. Through the creation of the invention, a new electron gun with simple process, long service life and excellent performance is provided, that is, the cold cathode is used as the emission source of the vacuum electronic device, and the surface of the cold cathode is arrayed by the cathode grid, which can effectively weaken the large area The electrostatic shielding effect of cold cathode materials emitting electrons can increase the emission current of large-area cold cathode materials. At the same time, the surface of the cathode substrate is designed as a whole plane, which can not only avoid processing burrs and other problems, improve edge effects and sparking, but also The electric field distribution on the surface of the cathode substrate can be made relatively flat, which is conducive to improving the uniformity of the emission current density and achieving the purpose of high current emission, and can be applied to vacuum electron radiation components or devices that generate high current and high density electron beams.

The invention relates to a transient electromagnetic coil and particularly relates to an anti-interference coil module and device. The module comprises a transmitting coil, a receiving coil disposed in the transmitting coil, and a compensation coil which is disposed in the receiving coil or between the transmitting coil and the receiving coil. The device comprises a middle junction box and a plurality of anti-interference coil modules, and the plurality of anti-interference coil modules are connected through the middle junction box to form one or more double-splayed coils. The module can eliminate an aliasing phenomenon of a primary field and a secondary field of a conventional receiving coil and reduces the influence of mutual inductance. The device provided by the invention adopts a modular structure and has the advantages of high flexibility and strong in anti-interference capability, and the low-voltage large-current emission can be achieved.