Silicon carbide junction barrier Schottky diode suitable for high-temperature environment

Abstract

The invention relates to a silicon carbide junction barrier Schottky diode suitable for a high-temperature environment, and belongs to the technical field of semiconductor devices. According to the device, a novel P + region injection layout structure is adopted on the basis of a traditional JBS device structure, the area of a Schottky contact region and Schottky junction current are increased, meanwhile, the area of a depletion region is increased through a strip-shaped pattern of the P + injection region, the current decline and power loss increase of a silicon carbide junction barrier Schottky diode at high temperature are reduced, and the performance of the device is improved. And the reverse breakdown voltage is prevented from being reduced after the Schottky region of the diode is increased, and the problems that the forward working current of the JBS device declines seriously and the power loss is obviously increased in a large-current and high-temperature working environment are solved.

Description

technical field [0001] The invention belongs to the technical field of semiconductor devices, and in particular relates to a silicon carbide junction barrier Schottky diode suitable for high-temperature environments. Background technique [0002] The wide bandgap semiconductor silicon carbide has extremely high thermal, chemical and mechanical stability. High thermal conductivity, high critical breakdown electric field strength, high saturation carrier velocity, and other excellent physical properties make silicon carbide an ideal semiconductor material for power devices. High thermal conductivity can make silicon carbide devices suitable for use with high-temperature equipment. Silicon carbide devices have high power density and are easy to cool, which can save equipment installation costs and system weight and volume; high electron saturation speed can make silicon carbide devices work In an environment with high frequency and high current density. [0003] Silicon carbi...

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Problems solved by technology

[0005] Therefore, how to solve the problem of the performance degradation of silicon carbide junction barrier diodes in high temperature environments has become an urgent technical problem to be solved.

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