173results about How to "Improve working characteristics" patented technology

The present invention relates to method for controlling the output power of a wind turbine having maximum energy capture in wind power generation field. When the wind speed varies between a cut-in wind speed and a rating wind speed, a speed change control method is adopted to track the best power curve and to obtain maximum power; when the wind speed varies between the rating wind speed and a cut-out wind speed, a blade change control method is adopted to regulate the change of the blade distance angle for the blade and hold the rating power invariable. The present invention can select different control method based on the wind speed to realize the maximum power output for the wind turbine, thereby can improve the wind energy using efficiency for the generator unit and ensure the stability and reliability of running of the wind turbine.

The disclosed resonance-form micro-mechanical gyro comprises: a comb-like crossed driver, a plate mass block, a lever-form amplifier, and a dual-end fork resonator. Wherein, forcing voltage on the driver, the mass block oscillates along x-axis and generates Coriolis force forced by external z-axis rotation; after amplifying by the lever, the Coriolis force acts on the resonator to regulate the motion periodically; it obtains the input angular frequency by measuring the difference output of the resonator. This invention improves sensitivity, resolution, and dynamic range, and convenient to digital process.

The invention relates to a method for inhibiting second harmonic current of a preceding-stage inverter of a two-stage inverter and a control circuit of the preceding-stage inverter of the two-stage inverter. By the method, the low-frequency pulse current of the preceding-stage direct current inverter can be inhibited obviously, the dynamic performance can be improved and the dynamic response speed is increased. The control circuit of the preceding-stage inverter consists of a band-pass filter, a voltage regulator, a summator, a power-width modulation (PWM) modulator and a driving circuit. The work principle is as follows: a voltage sampling circuit detects intermediate bus voltage, compares the intermediate bus voltage with a voltage reference signal to generate an error signal and transmits the error signal to the voltage regulator; a current sampling circuit detects the inductive current of the preceding-stage direct current inverter; the inductive current of the preceding-stage direct current inverter, an output signal of band-pass filter and an output signal of the voltage regulator are added by the summator to generate a modulation signal; the modulation signal is transmitted to a PWM modulation circuit; and a driving signal of a switch tube is acquired by the driving circuit, so that operation of the preceding-stage direct current inverter is controlled.

The invention relates to an axial magnetic flux brushless hybrid excitation motor. The axial magnetic flux brushless hybrid excitation motor comprises an armature stator core, an armature winding, an inner claw-pole, an outer claw-pole, a permanent magnet, a rotor framework, an excitation stator core and an excitation winding, wherein the armature stator core is a disc-shaped single side grooving structure and is connected with an end cover, a groove of the armature stator core is embedded with the armature winding, for a rotor, the magnetic inner and outer claw-poles and the permanent magnet are embedded in the non-magnetic rotor framework to form a rotary structure together with a rotation shaft, a lower stator comprises two different-radius cores and the annular excitation winding wound between the two cores, and the end cover and an annular core commonly form one part of an electric excitation magnetic circuit. The axial magnetic flux brushless hybrid excitation motor is advantaged in that as a permanent magnetic circuit and the electric excitation magnetic circuit are in mutual parallel connection, a demagnetization risk of the permanent magnet in a magnetic field adjusting process can be avoided, strong magnetic field adjusting capability is realized, and the scope is large; an axial magnetic flux structure is suitable for occasions having special requirements for mounting space; an electric brush portion can be omitted through the special magnetic circuit structure, so the motor structure is made to be reliable, and long service life is realized.

The invention discloses a ship propeller which mainly comprises a cylinder and a jet pipe, wherein the cylinder is provided with a compressed air inlet, a fuel nozzle and an ignition unit. The ship propeller is characterized in that both the cylinder (1) and the jet pipe (2) of the propeller work in water, compressed air and fuel are respectively introduced into the cylinder through the compressed air inlet (3) and the fuel nozzle (4) and are subject to burning explosion under the action of an ignition unit (5), and burning explosion products directly jet out a water column in the jet pipe (2) so as to generate a thrust force based on the reactive force. Compared with the known ship propelling system, the propeller uses the cylinder part as the power unit, uses the jet pipe part as the propelling unit and realizes the integration of the power unit and the propelling unit, thereby having the advantages of high propelling efficiency, high energy utilization efficiency, high economical efficiency, simple structure and high operational reliability. The invention includes multiple implementation schemes, can realize the ultra high-power propulsion by modular combination and is applicable to various ships.

Two-phase film materials and methods for their fabrication are provided. The two-phase film materials typically comprise a first phase, comprising a crystalline film of supramolecules and a second phase, comprising a polymer film. The method of fabricating two-phase film materials comprise the steps of preparing a lyotropic liquid crystal of supramolecules comprising molecules of organic compound comprising at least one polar group; depositing a layer of the lyotropic liquid crystal; applying an external orienting action to the LLC layer; and treating the LCC layer with a binding agent.

The invention discloses a driver topological structure of an open-winding motor and a modulation method of the driver topological structure. According to the driver topological structure, each bridgearm comprises an upper bridge arm power switching device and a lower bridge arm power switching device; the upper node of the upper bridge arm power switching device of each bridge arm is connected with a direct-current bus-bar voltage; the lower node of the lower bridge arm power switching device is connected with power source ground; the lower node of the upper bridge arm power switching deviceand the upper node of the lower bridge arm power switching device are connected with each other so as to be adopted as the output node of the bridge arm; the output node of the first bridge arm is connected with the left node of the A-phase stator winding of the open-winding motor, and the output node of the second bridge arm is connected with the right node of the A-phase stator winding of the open-winding motor and the left node of the B-phase stator winding of the open-winding motor; the output node of the third bridge arm is connected with the right node of the B-phase stator winding of the open-winding motor and the left node of the C-phase stator winding of the open-winding motor; and the output node of the fourth bridge arm is connected with the right node of the C-phase stator winding of the open-winding motor. With the driver topological structure for the open-winding motor of the invention adopted, the power density of a driver can be improved, and the working performance ofthe motor can be ensured.

The invention relates to a fractal array bionic ultra-wideband antenna which comprises a substrate and a fractal array bionic radiation patch adhering to the front side of the substrate. The fractal array bionic radiation patch is an antenna array formed by arranging 25 photonic crystal batwing bionic small antennas according to a crisscrossed array structure. The invention ensures that the antenna array has a large working bandwidth while enhancing the antenna radiation intensity through the array.

In a rear wheel suspension system (30) in a four-wheeled vehicle (10) wherein a joint member (31) is mounted in a rear portion of a vehicle body (11) with a pair of left and right front wheels (13,14) secured thereto, the joint member (31) comprising a roll shaft (41) extending substantially in the longitudinal direction of the vehicle body and a vertical swing shaft (36) extending in the transverse direction of the vehicle body, and a power unit (32) which supports rear wheels (26) and (27) is connected to a rear part of the joint member (31), thereby allowing the power unit (32) to be secured to the vehicle body (11) rollably and swingably, the roll shaft (41) is mounted so that a front end part (41a) thereof is positioned lower than a rear end part (41b) thereof. It is possible to easily attain the reduction in weight of the vehicle, set a weight distribution of the vehicle freely, and improve the vehicular design freedom.

The invention relates to a preparation method of TiB2 / C gradient cathode material for an aluminum electrolytic bath, which belongs to the technical field of electrolytic aluminum. The adopted raw materials comprise TiB2, carbon aggregate and cementing agent. The procedure is continuous dosing, continuous mixing and paving and adopts the sequence as follows: the content of the TiB2 in each layer sequentially increases and changes from a bottom layer to a surface layer, and the content of the carbon aggregate sequentially reduces and changes; or the content of the TiB2 sequentially reduces and changes, and the content of the carbon aggregate sequentially increases and changes; the materials paved layer by layer are hot-pressed and sintered, and then are naturally cooled to the room temperature so as to obtain the product. Because micro components of the materials prepared by the invention sequentially change, the invention can better solve the problems of easy coating shedding and the like caused by thermal mismatching of carbon and TiB2; meanwhile, the cathode material has strong sodium corrosion resistance, can remarkably improve the current efficiency of the electrolytic bath, and prolongs the service life of the electrolytic bath.

The invention discloses an SRAM dual-position unit wiring method which wires bit lines BL and BLb, and power lines Vss and Vdd along vertical direction by Metal 2, and wires a word line WL along horizontal direction by Metal 3, which not only reduces resistance on connection lines of bit lines BL and BLb, but also reduces coupling capacitance of bit lines BL and BLb and circumferential wired lines, so that performance characteristic of SRAM is improved. In addition, the bit lines BL and BLb are wired by Metal 2 so that metal wiring above SRAM has one more selection.

Provided is an LED lamp using a switching circuit, which prevents an electric shock caused by contact with a human body or conductive metal by arranging the switching circuit between a first rectifier circuit and an LED circuit. The LED lamp using the switching circuit connects the switching circuit to at least one line among a plurality of lines connecting the rectifier circuit and LED circuit. The switching circuit includes: a switching device including at least one among an SCR, a TRIAC, a TR, and a FET; and a driving device including at least one among a condenser, a TVS, a SIDAC, a resistor, and an inductor.

The invention relates to a control method of a methyl alcohol splitting decomposition and hydrogen production hybrid power system based on engine waste heat recovery. The method comprises the step of by dividing the work operation of vehicles into nine states comprising a start state, an idle speed stop state, a starting state, a small load state, an intermediate load state, a large load state, a rapid acceleration state, a rapid deceleration state and a flameout parking state. By means of the method, the hybrid power system can work in the best economic region, engine waste heat is sufficiently recovered, the energy utilization rate is improved, fuel oil consumption and engine emission are reduced, and the purposes of energy conservation and emission reduction are truly achieved.

The invention provides a ferroelectric field effect transistor and a preparation method thereof. The ferroelectric field effect transistor includes a substrate, a source / drain, a gate stack, and sidewalls. The gate stack is composed of a gate dielectric layer, a lower electrode layer, a ferroelectric layer, an insulating dielectric layer, and a gate electrode stacked sequentially in a direction away from the substrate. Since the lower electrode and the ferroelectric layer of the ferroelectric field effect transistor are separated from the gate electrode through the insulating dielectric layer,the purpose of improving the ferroelectric characteristics of the ferroelectric layer and reducing the leakage between the lower electrode and the gate electrode can be achieved. The device operatingcharacteristics are improved and the proper operation of the ferroelectric field effect transistor can be ensured.

An arrestor in which surface pressure at the interface between the inner peripheral surface of a reception opening of a fixed bushing and the outer peripheral surface of the forward end of an insulation tube is maintained at an appropriate level. The arrestor has the insulation tube (1) having a conductor (2) at its forward end, a stacked body (4) of arrestor elements, inserted into the insulation tube (1) with a high-voltage electrode (3) in between, a ground electrode (5) placed at the rear end side of the arrestor element stacked body (4), a coiled spring (8) placed at the rear end side of the ground electrode (5) so as to be concentric with the insulation tube (1), a metal case (6) surrounding the insulation tube (1), the ground electrode (5), and the spring (8), and a sealing member (7) installed at the opening on the rear end side of the metal case (6). The outer diameter of the rear end side of the insulation tube (1) is set smaller than the outer diameter of the center portion of the insulation tube (1). Also, a tapered outer surface (13) is provided at the outer periphery of the forward end (11) of the insulation tube (1).

The invention relates to a TFT-LCD array substrate and a making method thereof. The array substrate comprises a gate line, a data line, a thin film transistor, a pixel electrode and a common electrode line, wherein the gate line, the data line and the thin film transistor are formed on the substrate, and the pixel electrode and the common electrode line form a storage capacitor, a pulse electrodeis arranged between the common electrode line and the pixel electrode and is used for enabling the storage capacitor to have a first capacitance value when the pixel electrode is started to be charged and enabling the storage capacitor to have a second capacitance value when pixel electrode charging is finished, and the first capacitance value is smaller than the second capacitance value. In the invention, because the pulse electrode is arranged between the common electrode line and the pixel electrode, on the one hand, the storage capacitor has the smaller capacitance value when pixel electrode charging is started so as to lower load of the thin film transistor and enhance the charging capability of the thin film transistor, and on the other hand, the storage capacitor has the larger capacitance value when pixel electrode charging is finished to strengthen the holding property of voltage of the pixel electrode and lower the leaping voltage of the pixel electrode at the moment that the thin film transistor is closed.

The invention provides a high-performance micro electro mechanical system (MEMS) device by reducing an electrical resistance value of MEMS structures while maintaining their mechanical characteristics, and a method for fabricating the MEMS device. The MEMS device comprises: a fixed electrode (10) made of silicon and provided above a silicon substrate (1); a movable electrode (20) made of silicon and arranged in a mechanically movable manner by having a gap from nitridized film (3) of the semiconductor substrate; and a wiring layered part that is provided around the movable electrode, covers a portion of the fixed electrode. The wiring layered part comprises a first layer insulation film (13), a first wiring layer (23), a second layer insulation film (14), a second wiring layer (24) and protection film (19). A part of the portion of the fixed electrode covered by the wiring layered part is silicidized to form silicide part (25).

A modified asphalt Contactor reactor for blending and reacting asphalt cement and modifiers is described; for example, a vertically oriented vessel having an outer shell having an internal surface and an external surface, a lower end and a flat flanged top; an internal circulation tube having a base, a top and an outside surface, wherein the outside surface of the internal circulation tube and the internal surface of the outer shell forms an annulus; a heating jacket having heating oil inlet and a heating oil outlet coupled to the external surface of the outer shell for circulation of heating oil; and a hydraulic head assembly having an impeller coupled to the lower end the vertically oriented vessel wherein the impeller is located near the base of the internal circulation tube, wherein the impeller and the annulus are of sufficient size to facilitate the flow of high viscosity fluids.

Provided is a manufacturing method of a thin film transistor extremely low in a defect level which is excellent in an operation property. The method includes steps of: forming an undercoat film comprising a silicon nitride film 2 and a silicon oxide film 3 on an insulating substrate 1; forming an amorphous silicon film 10 on the undercoat film; forming an interface protecting film comprising a silicon oxide film 11 on the silicon film 10; laser-annealing the silicon film 10 by irradiating a YAG laser on the substrate on which the interface protecting film is formed; patterning the silicon film 4 after laser annealing; and forming a gate insulating film comprising a silicon oxide film 5 on the substrate after patterning wherein the undercoat film, the amorphous silicon 10, and the interface protecting film are sequentially formed in a vacuum chamber while a vacuum state is maintained.

The invention discloses a 65nm technology-based super-steep reverse-doping radiation-proof MOS field-effect tube, mainly solving the problems of increased OFF leakage current, threshold voltage drift and subthreshold oscillation amplitude degradation of a conventional 65nm MOS field-effect tube under a total dose radiation environment. The MOS field-effect tube comprises a P-type substrate (1) and an epitaxial layer (2) located on the substrate, wherein an isolation groove (3) is formed around a place above the epitaxial layer, a grid electrode (4) is arranged at the middle above the epitaxial layer, a source region (5) and a drain region (6) are arranged in the epitaxial layer between two side boundaries of the grid electrode and the inner boundary of the isolation groove, light-doping source-drain regions (7) are arranged in the epitaxial layer below the two side boundaries of the grid electrode, a channel is formed in an area between the two light-doping source-drain regions and right below the grid electrode, and a heavy-doping super-steep reverse-doping region (8) is arranged below the channel between the two light-doping source-drain regions. The 65nm technology-based super-steep reverse-doping radiation-proof MOS field-effect tube improves the total dose irradiation resistance of a device, and can be used for the preparation of large scale integrated circuits.

The invention discloses a new preparation method for silicon dioxide gas gel with high intensity and low density, belonging to inorganic porous material technical field. The concrete preparation procedures comprise: hydrolyzing orthosilicate methyl ester or orthosilicate methyl ester for two to six hours under the pH value between one point five and four point five at the temperature between fifty to eighty DEG C, adding ammonia in drops, then injecting into a mold to form a wet gel monomer in the air, putting the wet gel obtained to a pressure tank, aging for three to ten days in the aging liquid with a certain ratio at the temperature between eighty DEG C to one hundred and fifty DEG C, then obtaining the silicon dioxide gas gel setting material with high intensity and low density through drying. The new preparation method for silicon dioxide gas gel with high intensity and low density has the advantages of having easy operation and simple technology, increasing the intensity of traditional silicon dioxide gas gel material, simultaneously ensuring low density, and promoting the application of silicon dioxide gas gel in setting and insulation product field.

The invention relates to a charge storage type insulated gate bipolar transistor and a preparation method thereof, belonging to the technical field of power semiconductors. By improving the charge storage layer of the traditional charge storage type IGBT device, a semiconductor material used for the charge storage layer remote from the drift region has a larger band gap than a semiconductor material used for the charge storage layer close to the drift region, so that the semiconductor materials with different forbidden band widths form the same-type heterojunction at their contact interfaces,thereby forming a potential barrier that prevents minority carriers in the drift region from entering the base region. As a result, the carrier distribution concentration in the drift region is improved, the conductivity modulation effect of the IGBT is enhanced, the forward conduction voltage drop Vceon of the device is reduced, the breakdown voltage of the IGBT is optimized, and the tradeoff between the forward conduction voltage drop Vceon and the shutdown loss Eoff is achieved. Moreover, by adjusting the doping concentration of materials with different bandgap widths in the charge storagelayer and the combination of materials with different bandgap widths, the invention can further optimize the working characteristics of the device.

The invention discloses an electric propulsion device for a passenger ferry, which comprises a storage cell group, a main distribution panel, a direct-current motor, a clutch, a propeller shaft, a propeller, a control cabinet, a charger, a wind driven generator and a resistance box, wherein the direct-current motor is connected with one end of the propeller shaft via the clutch; the other end of the propeller shaft is fixedly connected with the propeller; the storage cell group is electrically connected with the direct-current motor successively via the main switch of the main distribution panel and the resistance box; the wind driven generator is arranged on the superstructure of a ferry body; the output end of the wind driven generator is electrically connected with the main switch of the main distribution panel via one path of input end of a change-over switch; the input end of the charger is electrically connected with the output end of a shore connection box; and the output end of the charger is electrically connected with the storage cell group via the other path of input end of the change-over switch. According to the electric propulsion device for the passenger ferry, which is disclosed by the invention, the current can be regulated by regulating the resistance value so as to regulate the revolving speed of the propeller, and the cost is lower. Wind is used for generating power while the passenger ferry is driven to charge the storage cell group, and the energy supplement to the storage cell group is guaranteed.

An object of the present invention is to improve the operating characteristics and reliability of semiconductor devices. The invention relates to a peninsula body device, which includes: an island-shaped semiconductor film having a channel formation region, a first low concentration impurity region, a second low concentration impurity region, and a high concentration impurity region including a silicide layer; a gate insulation film; a first gate electrode overlapping the channel formation region and the first low concentration impurity region with the gate insulating film sandwiched therebetween; a first gate electrode overlapping the channel formation region with the gate insulating film sandwiched therebetween a second gate electrode; sidewalls formed on the sides of the first gate electrode and the second gate electrode, wherein the film thickness of the gate insulating film on the second low-concentration impurity region is thinner than that on the other side film thickness over the area.