Ferroelectric field effect transistor and preparation method thereof

Abstract

The invention provides a ferroelectric field effect transistor and a preparation method thereof. The ferroelectric field effect transistor includes a substrate, a source / drain, a gate stack, and sidewalls. The gate stack is composed of a gate dielectric layer, a lower electrode layer, a ferroelectric layer, an insulating dielectric layer, and a gate electrode stacked sequentially in a direction away from the substrate. Since the lower electrode and the ferroelectric layer of the ferroelectric field effect transistor are separated from the gate electrode through the insulating dielectric layer,the purpose of improving the ferroelectric characteristics of the ferroelectric layer and reducing the leakage between the lower electrode and the gate electrode can be achieved. The device operatingcharacteristics are improved and the proper operation of the ferroelectric field effect transistor can be ensured.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a ferroelectric field effect transistor and a preparation method thereof. Background technique [0002] With the improvement of the integration density of CMOS devices, the increasing power consumption will become an important bottleneck restricting the further development of integrated circuits. Reducing the operating voltage by reducing the subthreshold swing of the device is an effective solution to reduce power consumption, and the negative capacitance field effect transistor is an effective technical route to realize this solution. [0003] During the erasing and writing process of the memory based on the floating gate or charge trapping principle, the carriers need to tunnel through the gate dielectric under a high electric field (the gate voltage is greater than 5V), which poses challenges to the circuit design and limits the operation of the device. life. Ferroel...

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Problems solved by technology

[0005] The main purpose of the present invention is to provide a ferroelectric field effect transistor and its preparation method to solve the problem that the ferroelectric field effect transistor is difficult to work normally in the prior art

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