34results about How to "Improve planarization effect" patented technology

The invention provides a manufacturing method for a shallow trench isolation structure. The method includes the following steps: covering a semiconductor substrate with an oxide layer and a nitride layer sequentially; carrying out exposure and etching process to form a shallow trench figure; depositing an isolation layer to fill the shallow trench figure; carrying out flattening processing on the isolation layer, and leaving part of the isolation layer; and removing the remaining isolation layer by adopting the method of wet etching, and then removing the nitride layer. According to the manufacturing method for the shallow trench isolation structure, in the process of flattening processing, the nitride layer is not contacted, flattening can be achieved by adopting common lapping fluid, cost of the lapping fluid is reduced, and meanwhile, the phenomena of indentation and corrosion caused by chemical and mechanical lapping are avoided due to the fact that the remaining isolation layer on the nitride layer is removed by using the method of wet etching.

To provide a material which can be formed into a cured film having high solvent resistance, liquid crystal-aligning properties, high transparency and high planarization, and which can be dissolved in a glycol-type solvent and is therefore applicable in the production line for a planarized film of a color filter when used in the formation of a cured film from the material. Disclosed are: a polyester resin solution for the production of a thermally cured film, which comprises a polyester polymer having a structural unit represented by the formula (1); and a cured film, a liquid crystal alignment layer and a planarized film each of which is produced from the polyester resin solution. (1) wherein A and B independently represent an organic group containing a ring structure.

To provide a material which can be formed into a cured film having high solvent resistance, liquid crystal-aligning properties, high transparency and high planarization, and which can be dissolved in a glycol-type solvent and is therefore applicable in the production line for a planarized film of a color filter when used in the formation of a cured film from the material. Disclosed are: a polyester resin solution for the production of a thermally cured film, which comprises a polyester polymer having a structural unit represented by the formula (1); and a cured film, a liquid crystal alignment layer and a planarized film each of which is produced from the polyester resin solution. (1) wherein A and B independently represent an organic group containing a ring structure.

Provided is a polyester composite for forming thermoset films, said composite having, after forming a thermoset film, high resistance to solvents and heat, good liquid crystal orientation, high transparency, and high planarizability. Said composite can also, when forming a thermoset film, be dissolved in glycol solvents and lactate ester solvents that can be applied to production lines for planarized color filter films. The composite contains: a component (A) which is a polyester obtained by reacting a tetracarboxylic dianhydride with a diol compound; a component (B) which is an epoxy compound having at least two epoxy groups; and a component (C) which is an amino-group-containing carboxylic compound obtained by reacting a diamine compound with a dicarboxylic anhydride.

The invention relates to an integrated circuit layout structure and a manufacturing method thereof belonging to the technical field of the manufacturing process of an integrated circuit and the layout design. In order to solve the problem in the prior art that after chemical mechanical polishing, copper metal in a thin line area of the integrated circuit layout is left, the invention provides the integrated circuit layout structure and the manufacturing method thereof. By increasing the line space in the thin line area, the growth thickness of the copper in the thin line area is lowered, and copper with different structures grows evenly, thus reducing the load of chemical mechanical polishing, improving planarization capacity, avoiding heat spots in the thin line area and improving yield of products.

The present invention provides a material for forming an organic film, containing a compound shown by the following general formula (1), and an organic solvent, where X represents an organic group having a valency of n1 and 2 to 50 carbon atoms, n1 represents an integer of 1 to 10, and R1 represents at least one or more of the following general formulae (2) to (4). This aims to provide an organic film material for forming an organic film that has all of high filling property, high planarizing property, and excellent adhesive force to a substrate.

The invention discloses an interlayer film manufacturing method. The interlayer film manufacturing method comprises the following steps: step one, providing a semiconductor substrate on which a pattern structure of a semiconductor device is formed; step two, forming a first insulating layer on the bottom surface and side surfaces of the pattern spacer and the surface of the pattern structure outside the pattern spacer; step three, forming a second insulating layer to completely fill the pattern spacer and extend outside the pattern spacer; and step four: performing chemical mechanical polishing on the second insulating layer and the first insulating layer with the pattern structure as a stop layer, and forming the interlayer film formed by stacking the first and second insulating layers filled in the pattern spacer. The interlayer film manufacturing method can reduce or eliminate dishing defects on the interlayer film surface at the top of the pattern spacer, can improve the flatness of the entire interlayer film, and can improve the electrical properties of semiconductor devices.

The invention relates to an integrated circuit layout structure and a manufacturing method thereof belonging to the technical field of the manufacturing process of an integrated circuit and the layout design. In order to solve the problem in the prior art that after chemical mechanical polishing, copper metal in a thin line area of the integrated circuit layout is left, the invention provides theintegrated circuit layout structure and the manufacturing method thereof. By increasing the line space in the thin line area, the growth thickness of the copper in the thin line area is lowered, and copper with different structures grows evenly, thus reducing the load of chemical mechanical polishing, improving planarization capacity, avoiding heat spots in the thin line area and improving yield of products.

A multi-core processor system includes a given configured to queue an interrupt process of a software interrupt request to the given core, and execute queued processes in the order of queuing at the given core; execute preferentially an interrupt process of a hardware interrupt request to the given core over a process under execution at the given core; determine whether the software interrupt request is a specific software interrupt request; and perform control to preferentially execute the interrupt process without queuing, upon determining that the software interrupt request is the specific software interrupt request.

The invention discloses a manufacturing method of a shallow trench insulation structure. The manufacturing method comprises the following steps: step 1, forming a hard mask layer on a semiconductor substrate and forming a shallow trench; step 2, forming a first insulating layer on the bottom surface and the side surface of a shallow trench and the surface of the hard mask layer outside the shallowtrench; step 3, forming a second insulating layer to completely fill the shallow trench and extend out of the shallow trench; step 4, performing chemical mechanical grinding on the second insulatinglayer and the first insulating layer by using the hard mask layer as a stop layer, and forming a shallow trench insulation structure formed by superposing the first insulating layer and the second insulating layer which are filled in the shallow trench. According to the invention, the flattening effect of the whole substrate surface can be improved, the disc-shaped defects at the top of the shallow trench insulation structure can be reduced or eliminated, and the CMP efficiency can be improved.

Disclosed is a material which enables pattern formation in an alkaline developer, and shows high solvent resistance, liquid crystal orientation, heat resistance, high transparency, and high planarity after being formed into a cured film, and can be dissolved in a glycol solvent which can be applied to the production line of a planarized film of a color filter while being formed into a cured film. Specifically disclosed is a photosensitive polyester composition for use in forming thermally cured film, containing component (A), component (B), component (C), and component (D): component (A): a modified polyester obtained by reacting a compound having a functional group selected from a glycidyl group and an isocyanate group with a polyester containing a structural unit represented by formula (1); component (B): an epoxy compound having two or more epoxy groups; component (C): an amino group-containing carboxylic acid compound obtained by reacting a diamine compound with dicarboxylic acid dianhydride; and component (D): 1,2-quinone diazide compound. In formula (1), A and B each independently represent an organic group containing a cyclic structure.

The embodiment of the invention discloses an array substrate, a manufacturing method thereof and a display panel. The array substrate comprises a substrate, and a first planarization layer, a first conductive layer and a second planarization layer which are positioned on the substrate. The first planarization layer is located between the substrate and the second planarization layer; the first conductive layer is located between the first planarization layer and the second planarization layer; a first groove is formed in one side, close to the second planarization layer, of the first planarization layer; the first conductive layer is partially or completely located in the first groove, so that the flatness of the side, away from the substrate, of the first conductive layer and the flatness of the side, away from the substrate, of the first planarization layer are improved. According to the technical scheme provided by the embodiment of the invention, the planarization effect can be improved, the thickness of the planarization layer is reduced, and the planarization effect does not depend on the thickness of the planarization layer.

To provide a material which can be formed into a cured film having high solvent resistance, liquid crystal-aligning properties, heat resistance, high transparency and high planarization, and which can be dissolved in a glycol-type solvent and a lactic acid ester-type solvent (which are solvents applicable in the production line for a planarized film of a color filter) in the formation of a cured film from the material. Disclosed is a polyester composition for the production of a thermally cured film, which comprises the following components (A) and (B): (A) a polyester having a constituent unit represented by the formula (1); and (B) an epoxy compound having two or more epoxy groups. (1) wherein A and B independently represent an organic group containing a ring structure.

A material which forms a cured film that has high solvent resistance, the property of aligning liquid crystals, heat resistance, high transparency, and high planarization characteristics and which, when used in forming a cured film, can be dissolved in various solvents usable in a line for producing, for example, a planarization film for color filters. The material is a polyester composition for forming heat-cured films which comprises a polyester as component (A), a crosslinking agent as component (B), and at least one diester compound represented by formula (1) as component (C). (In formula (1), P represents an alicyclic group, a group composed of an alicyclic group and an aliphatic group, or a structure represented by formula (2), and Q represents an alicyclic group or a group composed of an alicyclic group and an aliphatic group. In formula (2), R represents an alkylene group.)

An object of the present invention is to provide a polishing pad having high planarization property and capable of making it possible to suppress the occurrence of scratches. A polishing pad of the present invention has a polishing layer having oval cells each with a long axis inclined by 5° to 45° with respect to the direction of the thickness of the polishing layer.

The present invention provides a method for preparing a shallow trench isolation structure, a chemical mechanical polishing method and a system, including the following steps: 1) measuring the previous thickness of the target material layer, according to the previous thickness of the target material layer and the first stage The thickness of the target material layer retained after chemical mechanical polishing determines the first target removal thickness; 2) The theoretical grinding rate is determined according to the actual use time of the grinding consumables; 3) The grinding parameters are dynamically corrected according to the first target removal thickness and the theoretical grinding rate. The grinding parameters perform the first-stage chemical mechanical grinding on the target material layer; 4) perform the second-stage chemical mechanical grinding on the target material layer to achieve the removal of the second target removal thickness. The invention determines the grinding parameters by collecting the target removal thickness of the target material layer and combining the actual use time of the grinding consumables, thereby improving the flattening effect of grinding, eliminating the residue of the target material layer after chemical mechanical grinding, and improving the yield.