Fabrication method of shallow groove isolation structure and chemical mechanical grinding method and system

Abstract

The invention provides a fabrication method of a shallow groove isolation structure and a chemical mechanical grinding method and system. The fabrication method comprises the following steps of 1) measuring a previous value thickness of a target material layer, and determining a first target removal thickness according to the previous value of the target material layer and the thickness of the target material layer maintained after first-stage chemical mechanical grinding; 2) determining theoretical grinding rate according to actual application time of a grinding consumption material; 3) dynamically correcting a grinding parameter according to the first target removal thickness and the theoretical grinding rate, and performing first-stage chemical mechanical grinding on the target materiallayer according to the grinding parameter; and 4) performing second-stage chemical mechanical grinding on the target material layer to achieve removal of second target removal thickness. By the fabrication method, the grinding parameter is determined by collecting the target removal thickness of the target material layer and grinding the actual application time of the grinding consumption material, the planarization effect of grinding is improved, the residue of the target material layer after chemical mechanical grinding is eliminated, and the yield is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor technology, in particular to a preparation method of a shallow trench isolation structure, a chemical mechanical polishing method and a system. Background technique [0002] The process flow of shallow trench isolation is to etch a shallow trench on the surface of the silicon substrate first, then grow silicon dioxide in the shallow trench, and finally remove the excess silicon dioxide on the surface by chemical mechanical polishing, and retain the silicon dioxide in the shallow trench. Silicon dioxide, forming shallow trench isolation. Such as figure 1 Shown is a schematic cross-sectional structure of a semiconductor structure before chemical mechanical polishing. A silicon nitride layer 12 is grown on the surface of the silicon substrate 11, and a silicon dioxide layer 13 is grown after a shallow trench is etched. Due to the unevenness of the shallow trenches, the silicon dioxide layer ...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the object of the present invention is to provide a preparation method of a shallow trench isolation structure, a chemical mechanical polishing method and a system, which are used to solve the problem of performing the first stage of the silicon dioxide layer in the prior art. During chemical mechanical polishing, the surface of silicon dioxide is not flat enough after the first stage of chemical mechanical polishing due to the fact that the grinding time and grinding pressure are kept at a constant value

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