Manufacturing system

Abstract

A fabrication system. A plating tool generates a layer of conductive material on a substrate. A polishing tool uses a mechanical mechanism to remove the conductive material from the substrate. A metrology tool measures an electromagnetic signal induced in the conductive material using a non-destructive testing mechanism. A controller, coupled to the polishing and metrology tools, determines residue thickness and removal rate of the conductive material during the polishing process according to the measured electromagnetic signal, and adjusts process parameters for the plating and polishing tools accordingly.

Description

technical field [0001] The present invention relates to a process control, in particular to a method and system for adjusting process parameters of chemical mechanical polishing and coating processes by using an in-situ thickness measurement method. Background technique [0002] As IC components gradually enter small-sized, highly integrated multi-layer wires, the yellow light process has a high limit on the depth of focus (Depth of Focus, DOF), so the demand for planarization technology is even more important. The chemical mechanical polishing (hereinafter referred to as CMP) process is a planarization process that combines chemical reaction with mechanical polishing. Thin film deposition, high-precision exposure, control of etch stop layer, etc. [0003] However, the undulation profile of the wafer's intended grinding surface, the variation of the critical dimension (CD), the useless patterns formed at the edge of the wafer, which cause the edge to be thick and the center...

AI Technical Summary

Problems solved by technology

The second grinding process removes copper remaining on the substrate, but the amount of grinding is not adjusted based on the results of the first grinding process

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