The invention discloses a method for achieving through hole
interconnection by filling a through hole from bottom to top. The method includes the steps that (a) a
blind hole is machined in one surface of a substrate; (b) an insulating layer, a
barrier layer and a seed layer are sequentially formed on the surface, provided with the
blind hole, of the substrate; (c) the surface of the seed layer is coated with
photoresist, the
blind hole is filled and leveled up, and then
exposure and development treatment is carried out so that the
photoresist can only remain on the portion, at the bottom of the blind hole, of the surface of the seed layer; (d) the portion, not covered with the
photoresist, of the seed layer is removed, wherein the portion, at the bottom of the blind hole, of the seed layer is not affected; (e) the residual photoresist is removed; (f) conducting materials are filled into the blind hole to achieve generation from bottom to top; (g) the surface, not provided with the blind hole, of the substrate is thinned so that a through hole can be formed, and then the process of through hole
interconnection is finished. The invention further discloses a corresponding through hole
interconnection structure product. By means of the method, the process of through hole
electroplating can be carried out with convenient control, low cost and high efficiency, and the through hole interconnection structure product with better filling effects can be obtained.