A
semiconductor package and a fabrication method are disclosed. The fabrication method includes applying a sacrificial layer on one surface of a
metal carrier, applying an
insulation layer on the sacrificial layer, and forming through holes in the sacrificial layer and the
insulation layer to
expose the
metal carrier; forming a conductive metallic layer in each through hole; forming a patterned circuit layer on the
insulation layer to be electrically connected to the conductive metallic layer; mounting at least a
chip on the insulation layer and electrically connecting the
chip to the patterned circuit layer; forming an encapsulant to encapsulate the
chip and the patterned circuit layer; and removing the
metal carrier and the sacrificial layer to
expose the insulation layer and conductive metallic layer to allow the conductive metallic layer to protrude from the insulation layer. In the present invention, the distance between the
semiconductor package and the external device is increased, and thermal stress caused by difference between the
thermal expansion coefficients is reduced, so as to enhance the reliability of the product.