The invention provides a device and a method for measuring a surface defect of a
semiconductor material, and belongs to the field of
semiconductor tests. The device comprises a sample table, an atomic force
microscope conductive probe, a
voltage source, a piezoelectric exciting
ceramic, an
optical microscope system, a monochrometer, a photoelectric
detector and a phase lock
amplifier, wherein the
voltage source and the piezoelectric exciting
ceramic are connected with the atomic force
microscope conductive probe; and the monochrometer, the photoelectric
detector and the phase lock
amplifier are connected with one another sequentially. The method comprises the following steps of: putting a sample to be measured on the sample table; making the tip of the probe generate a periodic
mechanical vibration; generating periodic light on the exposed surface of the sample to be measured; focusing the light emitted by the sample to be measured on the monochrometer for splitting the light; and measuring a luminous
signal. According to the device and the method, the problem that electroluminescent spectra exist during measurement of the surface defect of a
semiconductor in the prior art is solved; furthermore, the influence of
stray light on a measurement result is avoided; and a high
signal to
noise ratio.