105 results about "Substrate deformation" patented technology

According to one embodiment, a write-once type information storage medium using a recording material which has a low to high characteristic that a light reflectivity in a recording mark increases with respect to a non-recording area and which has a recording characteristic in accordance with a principle of recording without substrate deformation, wherein the recording material includes at least an organic metal complex, and wherein the organic metal complex includes a center metal.

The invention provides enamel, which comprises a substrate and a ceramic glaze layer enamel-fired on the substrate, wherein the ceramic glaze layer is prepared by firing ceramic glaze powder which contains 60 and 90 weight percent of glass frit, 5 to 18 weight percent of crushed sand, 3 to 12 weight percent of clay, 0.3 to 5 weight percent of borax and 0.3 to 5 weight percent of soda ash. The enamel has excellent physiochemical performance such as low sintering temperature, corrosion resistance and the like. The method for preparing the enamel has the advantages of obtaining an enamel coating with high bonding strength and acid and alkali corrosion resistance at lower sintering temperature, solving the problem of substrate deformation, saving energy, and reducing production cost.

A wafer chuck is designed to allow the substrate to thermally deform during charged particle beam lithography. The wafer chuck includes a compliant layer disposed over an chuck body. During lithography processing the wafer is electrostatically held in contact with a flexible compliant layer and the wafer is exposed to the charged particle beam resulting in thermal deformation of the wafer. The compliant layer deforms with the substrate and allows the wafer to deform in a predictable manner.

System and method for manufacturing three-dimensional integrated circuits are disclosed. In one embodiment, the method includes providing an imaging writer system that includes a plurality of spatial light modulator (SLM) imaging units arranged in one or more parallel arrays, receiving mask data to be written to one or more layers of the three-dimensional integrated circuit, processing the mask data to form a plurality of partitioned mask data patterns corresponding to the one or more layers of the three-dimensional integrated circuit, assigning one or more SLM imaging units to handle each of the partitioned mask data pattern, and controlling the plurality of SLM imaging units to write the plurality of partitioned mask data patterns to the one or more layers of the three-dimensional integrated circuits in parallel. The method of assigning performs at least one of scaling, alignment, inter-ocular displacement, rotational factor, or substrate deformation correction.

A wafer chuck is designed to allow the substrate to thermally deform during charged particle beam lithography. The wafer chuck includes a compliant layer disposed over an chuck body. During lithography processing the wafer is electrostatically held in contact with a flexible compliant layer and the wafer is exposed to the charged particle beam resulting in thermal deformation of the wafer. The compliant layer deforms with the substrate and allows the wafer to deform in a predictable manner.

A semiconductor die has through silicon vias arranged to reduce warpage. The through silicon vias adjust the coefficient of thermal expansion of the semiconductor die, permit substrate deformation, and also relieve residual stress. The through silicon vias may be located in the edges and / or corners of the semiconductor die. The through silicon vias are stress relief vias that can be supplemented with round corner vias to reducing warpage of the semiconductor die.

A method is provided for placing a substrate onto a surface of a substrate holder, the surface having a plurality of burls. First substrate placement data is calculated. This data enables placement of the substrate at a certain position with respect to a position of the plurality of burls on the surface of the substrate holder. Then, the substrate is placed at the certain position in accordance with the substrate placement data. The certain position may be based on the position at which placement would result in a minimized overlay error or may be based on the position at which placement would result in minimized substrate deformation.

A lithographic apparatus is described, the apparatus comprising: an illumination system configured to condition a radiation beam; a support constructed to support a patterning device, the patterning device being capable of imparting the radiation beam with a pattern in its cross-section to form a patterned radiation beam; a substrate table constructed to hold a substrate; and a projection system configured to project the patterned radiation beam onto a target portion of the substrate, wherein the apparatus further comprises an alignment system configured to perform, for one or more alignment marks that are present on the substrate: —a plurality of alignment mark position measurements for the alignment mark by applying a respective plurality of different alignment measurement parameters, thereby obtaining a plurality of measured alignment mark positions for the alignment mark; the apparatus further comprising a processing unit, the processing unit being configured to: —determine, for each of the plurality of alignment mark position measurements, a positional deviation as a difference between an expected alignment mark position and a measured alignment mark position, the measured alignment mark position being determined based on the respective alignment mark position measurement; —define a set of functions as possible causes for the positional deviations, the set of functions including a substrate deformation function representing a deformation of the substrate, and at least one mark deformation function representing a deformation of the one or more alignment marks; —generating a matrix equation PD=M*F whereby a vector PD comprising the positional deviations is set equal to a weighted combination, represented by a weight coefficient matrix M, of a vector F comprising the substrate deformation function and the at least one mark deformation function, whereby weight coefficients associated with the at least one mark deformation function vary depending on applied alignment measurement; —determining a value for the weight coefficients of the matrix M; —determining an inverse or pseudo-inverse matrix of the matrix M, thereby obtaining a value for the substrate deformation function as a weighted combination of the positional deviations. —applying the value of the substrate deformation function to perform an alignment of the target portion with the patterned radiation beam.

A method is provided for placing a substrate onto a surface of a substrate holder, the surface having a plurality of burls. First substrate placement data is calculated. This data enables placement of the substrate at a certain position with respect to a position of the plurality of burls on the surface of the substrate holder. Then, the substrate is placed at the certain position in accordance with the substrate placement data. The certain position may be based on the position at which placement would result in a minimized overlay error or may be based on the position at which placement would result in minimized substrate deformation.

The invention provides a method for depositing a nano-grade TiO2 film on a textile material. The method comprises the steps that: high-purity metal Ti target is adopted as a target material; a pretreated textile material is adopted as a substrate; and the textile-material-based nano-grade TiO2 film is prepared under room temperature by using a DC reactive magnetron sputtering device. All samples adopt a structure that the substrate is on the upper side and the target is on the lower side, such that the nano-grade TiO2 film is prepared by sputtering from bottom to top, and impurity particles are prevented from falling onto the surface of the substrate. Also, the substrate is cooled with a water cooling device, such that substrate temperature during film deposition is controlled, and substrate deformation caused by high temperature is avoided. For ensuring the purity of the nano-grade TiO2 film, a reaction chamber is first pumped to base vacuum; high-purity argon is delivered as a sputtering gas; and high-purity oxygen is adopted as a reaction gas. With the method provided by the invention, a relatively uniform and compact TiO2 film can be deposited on the non-woven fabric fiber surface. The average particle size of the film is relatively small, and the surface roughness of the film is relatively low.

In complex metallization systems of sophisticated semiconductor devices, appropriate stress compensation mechanisms may be implemented in order to reduce undue substrate deformation during the overall manufacturing process. For example, additional dielectric material and / or functional layers of one or more metallization layers may be provided with appropriate internal stress levels so as to maintain substrate warpage at a non-critical level, thereby substantially reducing yield losses in the manufacturing process caused by non-reliable attachment of substrates to substrate holders in process and transport tools.