106 results about "Radiative transition" patented technology

The invention discloses an organic electroluminescent device containing a triazine compound and application thereof. The device comprises a hole transport layer, a luminescent layer and an electron transfer layer. The luminescent layer material of the device contains a compound containing a triazine group. The structural formula of the compound is as shown in the general formula (1). As the triazine material has small triplet state and singlet energy difference, it is easy to realize energy transfer between host-guest materials, energy originally lost in the form of heat is easy to utilize, radiative transition efficiency of the luminescent layer is enhanced, and high efficiency of the device is easier to obtain. When a doped material is selected as a fluorescent material, luminous radiation of the doped material is easier to obtain, and long life of the material is easier to realize.

The invention belongs to the field of organic electroluminescent materials, and discloses a heterocyclic compound and use thereof. The heterocyclic compound provided by the invention has a structure of a formula (B) and has the advantages of serving as a blue-light or dark-blue-light luminescent material for an organic electroluminescent device and overcoming the defects of an existing blue-lightluminescent material; and the compound, as a luminescent material, has a closely matched hole-electron transmission rate, which is conducive to improving the luminescence efficiency of the material and device stability. In addition, the compound has extremely high bond dissociation energy, which is conducive to prolonging the driving life of a display device. Moreover, the compound has an extremely high radiative transition rate constant, which is conducive to prolonging the driving life of an organic light-emitting diode device.

The invention discloses an organic light emission diode device containing a ketone and nitrogen heterocycle compound and an application thereof. The device comprises a hole transport layer, a light emission layer and an electron transport layer. The material of the light emission layer of the device comprises a compound comprising ketone and nitrogen heterocycle groups, and the structural formula of the compound is shown in the general formula (1). According to the ketone and nitrogen heterocycle material, due to a small triplet and singlet energy difference, energy transfer between host and guest materials can be realized easily, energy that is originally lost in a heat form is easily available, the radiative transition efficiency of the light emission layer is enhanced, and the high efficiency of the device can be acquired more easily. Further, when a fluorescent material is selected as a doped material, light emission radiation of the doped material is acquired more easily, and a long service life of the material can be acquired more easily.

The invention discloses an organic light emission diode device containing a diaryl ketone compound and an application thereof. The device comprises a hole transport layer, a light emission layer and an electron transport layer. The material of the light emission layer of the device comprises a compound comprising diaryl ketone, and the structural formula of the compound is shown in the general formula (1). According to the diaryl ketone material, due to a small triplet and singlet energy difference, energy transfer between host and guest materials can be realized easily, energy that is originally lost in a heat form is easily available, the radiative transition efficiency of the light emission layer is enhanced, and the high efficiency of the device can be acquired more easily. Further, when a fluorescent material is selected as a doped material, light emission radiation of the doped material is acquired more easily, and a long service life of the material can be acquired more easily.

A semiconductor device and method of its fabrication are provided to enable the device operation in a THz spectral range. The device comprises a heterostructure including at least first and second semiconductor layers. The first and second layers are made of materials providing a quantum mechanical coupling between an electron quantum well (EQW) in the first layer and a hole quantum well (HQW) in the second layer, and providing an overlap between the valence band of the material of the second layer and the conduction band of the material of the first layer. A layout of the layers is selected so as to provide a predetermined dispersion of energy subbands in the conduction band of the first layer and the valence band of the second layer. An application of an external bias field across the first and second layers causes THz radiation originating from radiative transitions of non-equilibrium carriers between at least one of the following: neighboring energy subbands of the EQW, neighboring energy subbands of the HQW, and ground energy subbands of the EQW and HQW.

A method is presented for fabricating a semiconductor device operable to generate a THz spectral range radiation in response to an external field. According to this method, a heterostructure is formed from selected layers. The layers include at least first and second semiconductor layers made of materials having a certain initial overlap between the valence band of the second layer material and the conduction band of the first layer material. The heterostructure layers are arranged with a selected layout providing a quantum mechanical coupling between an electron quantum well (EQW) in said first layer and a hole quantum well (HQW) in said second layer. The layout is selected so as to define a predetermined arrangement of a plurality of energy subbands and a predetermined dispersion of these subbands to define a desired effective overlap between the energy subbands of said conduction and valence bands. This enables the device operation for generation of the THz spectral range radiation originating from multiple radiative transitions of non-equilibrium carriers including at least one transition from transitions between the following: energy subbands of the EQW, energy subbands of the HQW, and ground energy electron subband of the EQW and ground energy hole subband of the HQW.

The invention discloses an organic light emission diode device and application thereof. The device comprises a hole transport layer, a light emission layer and an electron transport layer. The material of the light emission layer of the device comprises a compound comprising a 1, 8-diazafluoran-9-one group, and the structural formula of the compound is shown in the general formula (1). According to the 1, 8-diazafluoran-9-one material, due to a small triplet and singlet energy difference, energy transfer between host and guest materials can be realized easily, energy that is originally lost in a heat form is easily available, the radiative transition efficiency of the light emission layer is enhanced, and the high efficiency of the device can be acquired more easily. Further, when a 1, 8-diazafluoran-9-one compound material is directly used as a doped material, or the 1, 8-diazafluoran-9-one compound serves as a host material, and a fluorescent material is selected as the doped material, light emission radiation of the doped material is acquired more easily, and a long service life of the material can be acquired more easily.

The invention pertains to the field of optoelectronic devices, and discloses a white light electroluminescent device. The device has a layered structure. The layered structure sequentially includes: a substrate/an electrically conductive layer/a hole injection layer/a hole transporting layer/an electron barrier layer/a first blue light emitting layer/a first barrier layer/a red light emitting phosphor layer/a spacer layer/a green light emitting phosphor layer/a second barrier layer/a second blue light emitting layer/a hole barrier layer/an electron transporting layer/an electron injection layer/a cathode layer. The materials of the first and second blue light emitting layers both are a hole transporting material doped with a blue light emitting material, and the materials of the red light emitting phosphor layer and the green light emitting phosphor layer are a beryllium complex material doped with a red light emitting phosphor material and a beryllium complex material doped with a green light emitting phosphor material respectively. According to the white light electroluminescent device of the invention, the first and second barrier layers are respectively arranged between the first blue light emitting layer and the red light emitting phosphor layer, and between the second blue light emitting layer and the green light emitting phosphor layer, so triplet excitons of the blue light emitting material can be diffused into the red light emitting phosphor layer and the green light emitting phosphor layer to undergo radiative transition so as to emit light, so that light emitting efficiency of the device is further improved.

The invention relates to the design, fabrication, and use of semiconductor devices that employ deep-level transitions (i.e., deep-level-to-conduction-band, deep-level-to-valence-band, or deep-level-to-deep-level) to achieve useful results. A principal aspect of the invention involves devices in which electrical transport occurs through a band of deep-level states and just the conduction band (or through a deep-level band and just the valence band), but where significant current does not flow through all three bands. This means that the deep-state is not acting as a nonradiative trap, but rather as an energy band through which transport takes place. Advantageously, the deep-level energy-band may facilitate a radiative transition, acting as either the upper or lower state of an optical transition.

The invention relates to a silicon solar battery with a radiative transition layer polymer. The radiative transition layer polymer is formed by a polymerized binder filled with two kinds of fluorescent powder. The silicon solar battery is characterized in that the fluorescent powder in the radiative transition polymer strongly absorbs short wave and long wave solar radiation and converts the solar radiation into the radiation in the orange-yellow, near infrared and middle infrared spectrum zones.

The invention belongs to the technical field of preparation of luminescent nanometer materials and provides a method for rapid synthesis of high fluorescence copper nanoclusters using a polymer film as a carrier. The method includes 1), weighing a certain amount of chitosan, dropping glacial acetic acid to dissolve the chitosan completely, and configuring a chitosan solution with the mass percentage concentration of 1.5%-2.5%; 2), under room temperature, adding a glutathione solution and a cuprous nitrate trihydrate solution to the chitosan solution obtained in the step 1) and evenly stirringa mixed solution obtained, wherein the molar ratio of glutathione to copper nitrate trihydrate is 0.5:1-10:1; 3), allowing the mixed solution obtained in the step 2) to react for 5-7 hours in a blastbellow at the temperature of 35-45DEG C. With the method, the high fluorescence copper nanoclusters can be rapidly synthesized, the chitosan film serving as a good nanoreactor can protect the copper nanoclusters, energy loss from non-radiative transitions is reduced, and fluorescence strength is thereby improved.

The invention pertains to the field of optoelectronic devices, and discloses a white light electroluminescent device. The device has a layered structure. The layered structure sequentially includes: a base/an electrical conductive layer/a hole injection layer/a hole transporting layer/an electron barrier layer/a first blue light emitting layer/a first spacer layer/a phosphor light emitting layer/a second spacer layer/a second blue light emitting layer/a hole barrier layer/an electron transporting layer/an electron injection layer/a cathode layer. The materials of the first blue light emitting layer and the second blue light emitting layer both are a beryllium complexe material doped with a blue light emitting material, and the material of the phosphor light emitting layer is a beryllium complexe material doped with a red phosphor light emitting material and a green phosphor light emitting material. The white light electroluminescent device of the invention includes a mixed light emitting layer prepared by the blue light emitting layers and the phosphor light emitting layer, and the spacer layers are inserted between the blue light emitting layers and the phosphor light emitting layer, so triplet excitons of the blue light emitting material can be diffused into the red phosphor light emitting material and the green phosphor light emitting material to undergo radiative transition so as to emit light, so that light emitting efficiency of the device is further improved.

The invention provides a preparation method of a Al<3+> doped hexagonal phase NaYF4:Yb, Er upconversion material. The preparation method has the advantages that small-radius Al<3+> is introduced intoa NaYF4:Yb, Er crystal lattice through a trifluoroacetate high-temperature thermal decomposition method to allow NaYF4 to have evident lattice distortion, the ability of NaYF4 converting from alpha phase (cubic phase) to beta phase (hexagonal phase) is increased, and accordingly the purity of the hexagonal phase NaYF4 upconversion material is increased, and the upconversion fluorescence intensityof the hexagonal phase NaYF4 upconversion material is increased; in addition, the doping of the Al<3+> can favorably lower the symmetry of the local crystal field of activating agent Er<3+>, f-f forbidden transition can be destroyed to increase the probability of radiative transition, reaction time can be shortened, and accordingly the small-size hexagonal phase NaYF4:Yb, Er upconversion materialcan be synthesized favorably, the upconversion fluorescence intensity of the NaYF4:Yb, Er upconversion material is further enhanced, and the actual application of the NaYF4:Yb, Er upconversion material in the field of biomarkers.

The invention provides a thermally activated delayed fluorescent molecular material and a synthesis method thereof, and an organic electroluminescent device. The thermally activated delayed fluorescent molecular material comprises an electron donor and an electron acceptor, wherein the electron acceptor contains an indenyl. By substituting the phenyl in diphenylamine or triphenylamine in a donor molecule with indenyl, the electron donating ability of the donor can be increased, and the non-radiative transition rate can be effectively suppressed, thereby increasing the molecular photoluminescence quantum yield (PLQY), also increasing the torsion angle between the electron donor and the electron acceptor, at the same time reducing the electron cloud overlapping between a highest occupied molecular orbital (HOMO) and a lowest unoccupied molecular orbital (LUMO), and accordingly acquiring small delta EST.

The invention provides thermally-activated delayed fluorescent molecular materials, a synthesis method thereof and an electroluminescent device. A series of nitrogen-containing sulfone-based thermally-activated delayed fluorescent molecules are synthesized. The luminescent spectra can be narrowed well due to an intramolecular multiple-resonance effect of the molecules, moreover, large rigidity ofthe molecules is exhibited due to super-large planes, and therefore the molecules have high intersystem crossing rate constants and inversely-intersystem crossing rate constants, so that reduction, caused by the energy gap rule, of a radiative transition rate is inhibited effectively, and high PLY is obtained; and meanwhile, the stability of a TADF material is increased, and the service life of the device can be improved. The structures of the molecules are confirmed through high-resolution mass spectrometry, the photophysical properties of the molecules are studied, and finally a series of high-performance deep-red-light TADF OLEDs are prepared based on the luminescent materials.