339 results about "OPE compound" patented technology

An aliphatic polyester stretched film which has excellent flexibility and heat resistance and manifests no bleeding of a plasticizer, an aliphatic polyester composition which is a raw material of the stretched film, and a package using the stretched film. The film can be prepared from an aliphatic polyester composition comprising 10 to 60 parts by weight of at least one compound selected from (A) a compound represented by the general formula: R1OCH2CH(OR2)CH2OR3 (wherein, at least one of R1, R2 and R3 represents an acyl group having 6 to 18 carbon atoms, and remaining groups represent a hydrogen atom or an acetyl group.) and (B) a compound which is a reaction product of a condensate of 1 to 10 glycerin units with a carboxylic acid having 6 to 18 carbon atoms, based on 100 parts by weight of an aliphatic polyester. The aliphatic polyester stretched film can have a crystallinity of 20 to 60% which is obtained by molding the composition, and the film can be formed into a package obtained.

This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <300° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least one disilane derivative compound that is fully substituted with alkylamino and / or dialkylamino functional groups.

A complete biological degradable starch / polyester plastics and its production are disclosed. It consists of thermoplastic starch, fatty-aromatic block co-mixed polyester, long-chain unsaturated carboxylic acid or acid anhydride graft modified ingredient, organic peroxidate initiator, polyhydric alcohol ester compound plasticizer, organic compound or polyhydric alcohol stabilizer or lubricant. The process is carried out by mechanical-chemical modification and thermoplastic treating, melt mixing fatty-aromatic block co-mixed polyester material with initiator, modifier and stabilizer in high-speed mixer, graft reacting, milling, cooling, breaking, reaction extruding by second bi-screw reaction extruder and granulating. Its advantages include excellent physical and mechanical properties, complete degradation. It can be used for agriculture, medicine, sanitation, engineering materials, refuse bag and packing materials.

A crosslinkable thermal interface material is produced by combining at least one rubber compound, at least one amine resin and at least one thermally conductive filler. This interface material takes on the form of a liquid or “soft gel”. The gel state is brought about through a crosslinking reaction between the at least one rubber compound composition and the at least one amine resin composition. Once the foundation composition that comprises at least one rubber compound, at least one amine resin, and at least one thermally conductive filler has been prepared, the composition must be compared to the needs of the electronic component, vendor, or electronic product to determine if a phase change material is needed to change some of the physical properties of the composition. A method for forming the crosslinkable thermal interface materials disclosed herein comprises a) providing at least one saturated rubber compound, b) providing at least one amine resin, c) crosslinking the at least one saturated rubber compound and the at least one amine resin to form a crosslinked rubber-resin mixture, d) adding at least one thermally conductive filler to the crosslinked rubber-resin mixture, and e) adding a wetting agent to the crosslinked rubber-resin mixture. This method can also further comprise adding at least one phase change material to the crosslinked rubber-resin mixture. The contemplated thermal interface material can be provided as a dispensable liquid paste, a gel, a tape, or a film. Applications of the contemplated thermal interface materials described herein comprise incorporating the materials into a layered material, an electronic component or a finished electronic product.

A method for preparing a multi-component semiconductor single crystal, the process steps are: (1) cleaning a crucible, (2) charging and degassing and sealing, (3) crystal growth, and (4) annealing and cooling. The single crystal growth device matched with this method includes a movable lower furnace heater and a single crystal growth furnace with an auxiliary heater in the middle, which can flexibly adjust the temperature field in the crystallization temperature gradient area according to the crystallization habit of the multi-component compound, and obtain The narrow temperature zone and large temperature gradient crystallization temperature field distribution required for the growth of compound single crystals maintain the stability of the solid-liquid interface and realize the flat interface growth of single crystals. Using the growth device, various multi-element compound semiconductor single crystals with complete appearance and good crystallization performance can be successfully grown by adopting the crucible descending method.

The invention discloses a method for growing an ABX3 perovskite single crystal by antisolvent diffusion. The method comprises the following steps: dissolving an A-containing halide and a B-containing metal compound in a solvent M, and adding a right amount of antisolvent N to obtain an approximately saturated single crystal growth solution, wherein the mole ratio of the A-containing halide to the B-containing metal compound is 1:(0.1-2); putting the open container P containing the approximately saturated single crystal growth solution into the closed container Q containing the antisolvent N; and at a certain temperature, carrying out seed crystal culture and seed crystal growth (two growth processes) to obtain the ABX3 perovskite single crystal with required size. According to the method for preparing the high-quality perovskite single crystal, the principle that the antisolvent diffuses to the single crystal growth solution is utilized to slowly lower the solubility of perovskite in the single crystal growth solution, so that the solution precipitates the perovskite single crystal. The method has the advantages of large size and high quality of the obtained single crystal, high utilization ratio of raw materials, simple facility request, simple technique, low environmental hazard and the like.