The invention provides a gate drive current charging circuit of a power device and a gate drive
control circuit of the power device. The gate drive
control circuit separates
charge and discharge paths, and uses an adjustable
current source to provide charging current for the power device, with more flexible and reliable
control mode, which can be applicable to integrated
package applications of the power device, especially for depletion-type GaN power transistors. The gate drive current charging circuit is an on-
chip adjustable
current source with maximum
current clamp, and the generated charging current is adjusted by adjusting the
voltage value of the reference
voltage, the resistance value of the off-
chip resistor and the number of strobe
current mirror units, so as to ensure more flexible and accurate control of the charging current of the power device. A current control loop is used to realize the maximum current clamping, and a filtering structure is set to eliminate the influence of
noise, so as to improve the
system reliability. At the same time, when the
gate voltage of the power device reaches the logic high level of the gate drive
control circuit, the generation of the charging current is stopped, and no additional
power consumption is generated. No series resistance is used, so that no gate parasitic
inductance is introduced.