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84 results about "Copper contamination" patented technology
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Removal of post etch residues and copper contamination from low-k dielectrics using supercritical CO2 with diketone additives
InactiveUS20050107274A1Surface-active detergent compositionsNon-surface-active detergent compositionsDiketoneCopper contamination
The present invention provides for methods and compositions for removal of post etch residues and copper contamination from low-k dielectrics and substrates using supercritical CO2 with diketone additives. Using methods of this invention, Cu-residues formed during dielectric etch were removed with an high efficiency. Various process conditions are presented in order to exemplify the cleaning mechanisms.
Owner:EKC TECH
Polishing Composition for Silicon Wafer
InactiveUS20090127501A1Avoid Metal ContaminationHigh removal rateOther chemical processesSemiconductor/solid-state device manufacturingWaferingCopper contamination
The present invention relates to a polishing composition for silicon wafer comprising silica, a basic compound, a polyaminopolycarboxylic acid compound having hydroxy group, and water. The polishing composition can prevent metal contamination by nickel, chromium, iron, copper or the like, particularly copper contamination in polishing of silicon wafer.
Owner:NISSAN CHEM IND LTD
Application of eupatorium adenophorum spreng to repairing heavy metal zinc, lead and copper contaminated mining area soil
InactiveCN102784797AAvoid spreadingSignificant patienceContaminated soil reclamationSoil scienceCopper contamination
The invention relates to an application of eupatorium adenophorum spreng to repairing heavy metal zinc, lead and copper contaminated mining area soil, which comprises the following steps of: planting the eupatorium adenophorum spreng in the heavy metal zinc, lead and copper contaminated mining area soil in which the eupatorium adenophorum spreng is widely distributed, absorbing and accumulating heavy metals by utilizing plants of the eupatorium adenophorum spreng according to the enrichment characteristics of heavy metal zinc, lead and copper and transporting a majority of heavy metals to the parts of the plants on the ground; and harvesting the parts of the plants on the ground before seeds of the eupatorium adenophorum spreng are mature to prevent the seeds of the eupatorium adenophorum spreng from being blown in the wind and spread to the outside of a mine, ashing the parts of the plants on the ground and extracting the heavy metals to achieve the purpose of repairing the heavy metal zinc, lead and copper contaminated mining area soil. As the eupatorium adenophorum spreng has exuberant vitality and large biomass and can reduce the concentration of the heavy metal zinc, lead and copper in the rhizosphere soil of the eupatorium adenophorum spreng through a mechanism of the eupatorium adenophorum spreng to protect the eupatorium adenophorum spreng against heavy metal damage and normally grow, when the eupatorium adenophorum spreng is applied to the repairing of the heavy metal zinc, lead and copper contaminated mining area soil, the cost is low, and the repairing potential is large.
Owner:SICHUAN AGRI UNIV
Dual damascene integration scheme for preventing copper contamination of dielectric layer
InactiveUS6939793B1Avoid pollutionReduces the formation of voidsSemiconductor/solid-state device detailsSolid-state devicesCopper contaminationDiffusion barrier
A semiconductor device includes a first metallization layer, a first diffusion barrier layer, a second etch stop layer, a first dielectric layer, a first etch stop layer, a second dielectric layer, a trench extending through the second dielectric layer and the first etch stop layer, and a via extending through the first dielectric layer, the second etch stop layer, and the first diffusion barrier layer. The first diffusion barrier layer is disposed over the first metallization layer. The second etch stop layer is disposed over and spaced from the first diffusion barrier layer, and the first dielectric layer is disposed over the second etch stop layer. The via can also have rounded corners. A third etch stop layer can also be disposed between the first diffusion barrier layer and the second etch stop layer. A sidewall diffusion barrier layer can be disposed on sidewalls of the via and trench, and the sidewall diffusion barrier layer is formed from the same material as the first diffusion barrier layer. A method of manufacturing the semiconductor device is also disclosed.
Owner:INNOVATIVE FOUNDRY TECH LLC
Heavy metal composite adsorbent and method for preparing same
InactiveCN101664672ALow costImprove the ability to adsorb heavy metalsOther chemical processesWater/sewage treatment by sorptionSorbentCopper
The invention discloses a heavy metal composite adsorbent and a method for preparing the same. The heavy metal composite adsorbent comprises the following raw materials in portion by mass: 100 portions of acrylamide, 12 to 67 portions of diatomite, 0.05 to 1.8 portions of crosslinking agent, and 0.05 to 1.8 portions of initiator. The adsorbent has a big specific surface area and a good adsorbing property and can be used for removing zinc and copper pollutants in water and regenerated in a solution of diluted acid.
Owner:LANZHOU INST OF CHEM PHYSICS CHINESE ACAD OF SCI
method to etch cu/ta/tan selectively using dilute aqueous hf/h2so4 solution
InactiveUS20150130065A1Reduce copper pollutionImprove protectionSemiconductor/solid-state device detailsSolid-state devicesCopper contaminationAqueous solution
Copper can be etched with selectivity to Ta / TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and H2SO4 can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.
Owner:INTERMOLECULAR +1
Method to etch Cu/Ta/TaN selectively using dilute aqueous HF/HCI solution
InactiveUS9123785B1Avoid etchingPotential damageSemiconductor/solid-state device detailsSolid-state devicesCopper contaminationAqueous solution
Copper can be etched with selectivity to Ta / TaN barrier liner and SiC hardmask layers, for example, to reduce the potential copper contamination. The copper film can be recessed more than the liner to further enhance the protection. Wet etch solutions including a mixture of HF and HCl can be used for selective etching copper with respect to the liner material, for example, the copper film can be recessed between 2 and 3 nm, and the barrier liner film can be recessed between 1.5 and 2 nm.
Owner:INTERMOLECULAR +1
Single damascene integration scheme for preventing copper contamination of dielectric layer
InactiveUS7038320B1Avoid pollutionReduces the formation of voidsSemiconductor/solid-state device detailsSolid-state devicesCopper contaminationDiffusion barrier
A semiconductor device includes a first metallization layer, a first diffusion barrier layer, a first etch stop layer, a dielectric layer and a via extending through the dielectric layer, the first etch stop layer, and the first diffusion barrier layer. The first diffusion barrier layer is disposed over the first metallization layer. The first etch stop layer is disposed over and spaced from the first diffusion barrier layer, and the dielectric layer is disposed over the first etch stop layer. The via can also have rounded corners. A second etch stop layer can also be disposed between the first diffusion barrier layer and the first etch stop layer. A sidewall diffusion barrier layer can be disposed on sidewalls of the via, and the sidewall diffusion barrier layer is formed from the same material as the first diffusion barrier layer. A method of manufacturing the semiconductor device is also disclosed.
Owner:ADVANCED MICRO DEVICES INC
Method to etch cu/ta/tan selectively using dilute aqueous hf/hcl solution
InactiveUS20150255340A1Reduce copper pollutionImprove protectionSemiconductor/solid-state device detailsSolid-state devicesCopper contamination
Owner:INTERMOLECULAR +1
Method for enhanced remediation of copper contaminated soil by using iris in combination with cutting measure
InactiveCN102989754AStrong resistanceLarge biomassContaminated soil reclamationCopper contaminationIris Plant
Owner:INST OF BOTANY JIANGSU PROVINCE & CHINESE ACADEMY OF SCI
Method for detecting acute toxicity of copper-contaminated soil by using fresh water photobacteria
InactiveCN101487798AAvoid restrictionsNatural Luminous PropertiesChemiluminescene/bioluminescencePreparing sample for investigationLuminescent bacteriaAcute toxicity testing
The invention relates to a detection method in the technical field of environmental monitoring, specifically a method for detecting acute toxicity of copper contaminated soil by using fresh water luminescent bacteria. The method overcomes the limitations that seawater luminescent bacteria is applied in the detection of acute toxicity in soil sample. The specific method uses fresh water luminescent bacteria as bacteria for detection, and includes the following steps: in the first step, soil background soil is used for preparing bacteria suspension of fresh water luminescent bacteria; in the second step, a double-chamber centrifuge method is used for extracting soil pore space water; and in the third step, the toxicity of the soil sample is detected.
Owner:INST OF AGRI RESOURCES & REGIONAL PLANNING CHINESE ACADEMY OF AGRI SCI
Welding wire for submerged arc welding
ActiveUS20090314756A1Reduce abrasive wearEliminate contaminationArc welding apparatusWelding/cutting media/materialsCopper contaminationLubricant
The copper cladding normally applied to the surfaces of a submerged arc welding wire for preventing weld gun contact tip abrasive wear is replaced with a solid lubricant. This eliminates copper contamination of the weld from the copper cladding while preserving the useful life of the contact tip.
Owner:LINCOLN GLOBAL INC
Baking method of quartz products, computer program and storage medium
ActiveUS20070298621A1Suppress copper contaminationImprove responseSemiconductor/solid-state device manufacturingChemical vapor deposition coatingCopper contaminationManufactured apparatus
The present invention relates to control of copper contamination to semiconductor substrates upon operation of a heat treatment apparatus which is a semiconductor manufacturing apparatus and which is constructed with quartz products having been contaminated with copper when machined. The quartz product is placed in a heating atmosphere on the stage where it is not still used for a heat treatment for semiconductor substrates. Baking gases including a hydrogen chloride gas and a gas for enhancing activity of the hydrogen chloride gas, for example, an oxygen gas, are then supplied to the quartz product. Consequently, the copper concentration in the region from the surface to the 30 ÎĽm depth of the quartz product can be controlled below 20 ppb, preferably below 3 ppb. The baking process may be carried out before or after assembling the quartz product into the heat treatment apparatus.
Owner:TOKYO ELECTRON LTD
Copper contamination control of in-line probe instruments
Radio frequency photo conductive decay is used to monitor a small piece of high-grade silicon to determine if copper contamination has been removed from a probe tool. A probe tool is placed in contact with a small "waferette" of silicon repeatedly until the copper signal is diminished, indicating that the tool may be used for other products without concern for copper contamination.
Owner:BELL SEMICON LLC
Application of polygonum runcinatum to remediation of soil contaminated by heavy metals mainly comprising cadmium, zinc, lead and copper
InactiveCN102125928ASignificant patienceNotable featuresContaminated soil reclamationSoil sciencePolygonaceae
The invention discloses a polygonaceae plant, and in particular relates to an application of polygonum runcinatum to remediation of soil contaminated by heavy metals mainly comprising cadmium, zinc, lead and copper, namely, the polygonum runcinatum is planted in the soil contaminated by the heavy metals mainly comprising cadmium, zinc, lead and copper. In the invention, by virtue of the enrichment characteristic of the polygonum runcinatum on the heavy metals mainly comprising cadmium, zinc, lead and copper, the polygonum runcinatum is planted in the contaminated soil so as to absorb and accumulate the heavy metals mainly comprising cadmium, zinc, lead and copper; and most part of the polygonum runcinatum is transported to an over-ground part so as to achieve the purpose of remediation of the soil contaminated by the heavy metals mainly comprising cadmium, zinc, lead and copper. The polygonum runcinatum is photophilous, shade-tolerant, cold-resistant and barren-resistant, grows at a fast speed and is extensively managed, thus achieving lower cost and strong operability; and meanwhile the polygonum runcinatum also has the functions of green coverage, reduction of water and soil loss and heavy metal pollution diffusion for the contaminated soil, thus developing a new variety of plant resources for remediation of the heavy metal contaminated soil.
Owner:SICHUAN AGRI UNIV +9
System for remediating cross contamination in semiconductor manufacturing processes
ActiveUS7200498B2Easy and efficient and cost-effectiveProcesses—efficiently streamlining cross-contamination testingSemiconductor/solid-state device testing/measurementMaterial analysis by electric/magnetic meansCopper contaminationEngineering
Owner:TEXAS INSTR INC
Polishing Composition For Silicon Wafer
InactiveUS20080115423A1Avoid Metal ContaminationHigh removal ratePigmenting treatmentOther chemical processesHydrogen atomHydrogen
The present invention relates to a polishing composition for silicon wafer comprising silica; a basic compound; at least one compound selected from the group consisting of amino acid derivatives represented by formula (1)wherein R1, R2 and R3 are identical or different one another, C1-12alkylene group that may be substituted by hydroxyl group, carboxyl group, phenyl group or amino group, and formula (2)wherein R4 and R5 are identical or different each other, hydrogen atom, or C1-12alkyl group that may be substituted by hydroxyl group, carboxyl group, phenyl group or amino group, with a proviso that both R4 and R5 are not hydrogen at the same time, and R6 is C1-12alkylene group that may be substituted by hydroxyl group, carboxyl group, phenyl group or amino group, and the salts of the amino acid derivatives; and water. The polishing composition can prevent metal contamination, particularly copper contamination in polishing of silicon wafer.
Owner:NISSAN CHEM IND LTD
Method for repairing copper-contaminated soil by using hyperaccumulator-sesame
InactiveCN103028597AWide range of growthShorten the growth cycleContaminated soil reclamationSoil scienceHyperaccumulator
The invention discloses a method for repairing copper-contaminated soil by using hyperaccumulator-sesame, which aims to solve the problems that in the conventional heavy metal-contaminated soil repairing technology, a plant is low in biomass, low in adaptability, slow in growth, poor in economic benefits, poor in comprehensive practical application effect and the like. The method comprises the following steps: directly planting the sesame into heavy metal-contaminated soil; and cultivating the sesame normally, wherein the sesame can grow normally in the contaminated soil without obvious poisoning symptoms; the oil content of a sesame fruit is not affected; the sesame is short in growth cycle and high in biomass; the content of copper absorbed and accumulated by an aboveground part of the sesame is far higher than a background value of the soil, thus achieving a hyperaccumulation level; and by the method, cultivation and management are simpler, expense is low, and a certain amount of economic income can be obtained while contamination is controlled at the same time.
Owner:HUNAN AGRICULTURAL UNIV
System for remediating cross contamination in semiconductor manufacturing processes
ActiveUS20050274805A1Easy and efficient and cost-effectiveProcesses—efficiently streamlining cross-contamination testingSemiconductor/solid-state device testing/measurementTransmission systemsCopper contaminationEngineering
The present invention defines a system (100) for detecting copper contamination within a semiconductor manufacturing process. According to the present invention, a semiconductor wafer (102) is transferred (108) from a semiconductor manufacturing component (104), which may have exposed the wafer to copper contamination, to a measurement system (106). The measurement system measures an electrical value at a plurality of locations along a surface of the wafer, prior to and after exposure of the surface to an activation system (112). The activation system is provided to cause any copper contamination along the surface to form a precipitate thereon. An analysis component (110) is provided to receive electrical value and location information from the measurement system and to identify, from the measurements, the presence and location of copper contamination along the semiconductor wafer surface.
Owner:TEXAS INSTR INC
Copper contamination detection method and system for monitoring copper contamination
InactiveUS20090087928A1Prevent copper contaminationSemiconductor/solid-state device testing/measurementSemiconductor/solid-state device manufacturingDopantCopper contamination
A method of monitoring copper contamination. The method includes method, comprising: (a) ion-implanting an N-type dopant into a region of single-crystal silicon substrate, the region abutting a top surface of the substrate; (c) activating the N-type dopant by annealing the substrate at a temperature of 500° C. or higher in an inert atmosphere; (c) submerging, for a present duration of time, the substrate into an aqueous solution, the aqueous solution to be monitored for copper contamination; and (d) determining an amount of copper adsorbed from the aqueous solution by the region of the substrate.
Owner:GLOBALFOUNDRIES INC
Welding wire for submerged arc welding
ActiveUS8901455B2Reduce abrasive wearEliminate contaminationArc welding apparatusWelding/cutting media/materialsCopper contaminationLubricant
The copper cladding normally applied to the surfaces of a submerged arc welding wire for preventing weld gun contact tip abrasive wear is replaced with a solid lubricant. This eliminates copper contamination of the weld from the copper cladding while preserving the useful life of the contact tip.
Owner:LINCOLN GLOBAL INC
Manufacturing method of magnetic radom access memory unit array and peripheral circuit connecting wires
InactiveCN109545745ACircuit electrical performance optimizationImproved loop electrical performanceSolid-state devicesSemiconductor/solid-state device manufacturingCMOSCopper contamination
The invention provides a manufacturing method of a magnetic radom access memory unit array and peripheral circuit connecting wires. The manufacturing method comprises the steps of: (1) providing a surface-polished CMOS substrate with metal connecting wires, forming bottom electrode vias in the substrate, and then filling the bottom electrode vias with non-copper metal; (2) making bottom electrodecontact on the bottom electrode vias; (3) manufacturing a magnetic tunnel junction structural unit on the bottom electrode contact; (4) and forming top electrode vias in the magnetic tunnel junction structural unit, and manufacturing metal connecting wires realizing connection with a logic / memory unit. The non-copper metal is selected from one of Ta, TaN, Ti, TiN, W or WN. Since the magnetic tunnel junction is manufactured on and its bottom electrodes can be formed in the metal of the surface-polished non-copper bottom electrode vias, the copper contamination and copper diffusion caused by directly manufacturing the MTJ on the copper Vx(x>=1) are effectively avoided, thereby being very conductive to the optimization and improvement of electrical performance of an MRAM loop and the miniaturization of the device.
Owner:SHANGHAI CIYU INFORMATION TECH CO LTD
Integrally formed bake plate unit for use in wafer fabrication system
InactiveUS6891134B2Rapid temperature set-point changeAvoid problemsSemiconductor/solid-state device manufacturingHot plates heating arrangementsCopper contaminationFilling materials
A bake plate is integrally formed from a copper disk whose lower surface defines a desired heater element channel pattern that is filled with electrically conductive resistive material. Copper contamination is prevented by coating the structure. The channel pattern and fill material may be tailored to optimize thermal uniformity across the bake plate surface, and to produce a bake plate that may be mass produced with substantially uniform and repeatable thermal characteristics.
Owner:ASML HLDG NV
Manufacturing method of magnetic radom access memory unit array and peripheral circuit connecting wires
InactiveCN109545958AMiniaturizationCircuit electrical performance optimizationSolid-state devicesGalvano-magnetic device detailsCMOSCopper contamination
The invention provides a manufacturing method of a magnetic radom access memory unit array and peripheral circuit connecting wires. The manufacturing method adopts a manner of manufacturing a bottom electrode contact layer on through holes of copper metal for covering copper through holes, and comprises the steps of: (1) providing a surface-polished CMOS substrate with the metal copper through holes, and making bottom electrode contact in the substrate; (2) manufacturing a magnetic tunnel junction structural unit on the bottom electrode contact; (3) and forming top electrode vias in the magnetic tunnel junction structural unit, and manufacturing metal connecting wires realizing connection with a logic / memory unit. since the bottom electrode contact material adopts non-copper metal, a magnetic tunnel junction can be manufactured on and its bottom electrodes can be formed in the surface-polished bottom electrode contact layer, thereby effectively preventing copper contamination and copper diffusion caused by directly manufacturing the MTJ on the copper Vx(x>=1) and the direct growth of an MTJ multilayer film on the coarse copper surface, and being very conductive to the optimizationand improvement of electrical performance of an MRAM loop and the miniaturization of the device.
Owner:SHANGHAI CIYU INFORMATION TECH
Quartz products and heat treatment apparatus
InactiveCN101092278AReduce pollutionImprove distributionSemiconductor/solid-state device manufacturingGlass shaping apparatusCopper contaminationManufactured apparatus
Owner:TOKYO ELECTRON LTD
Chemical leaching restoration method for copper-contaminated soil
InactiveCN103706628APromote degradationEasy to operateContaminated soil reclamationSoil scienceCopper contamination
The invention discloses a chemical leaching restoration method for copper-contaminated soil. The method is high in biodegradability and leaching efficiency. The method comprises the following steps of punching small holes in the bottom of a PVC (polyvinyl chloride) leaching column with an internal diameter of 5cm and a height of 15cm, fixing filter paper at the bottom of the leaching column, accurately weighing 100.00 grams of contaminated soil into the column, adding a 1 to 22mol / L BHMTPMPA [bis(hexamethylene triamine penta (methylene phosphonic acid))] solution to the upper end of the column in the ratio of the soil to the solution of 1:1 to 1:5 for one time, and determining the content of heavy metal copper in leachate after leaching, wherein 2 to 16 small holes are uniformly punched in the bottom of the leaching column; two layers of filter paper are fixed at the bottom of the column; the copper concentration of the contaminated soil is 800 to 2,975mg.kg<-1>. Due to the adoption of a measure for the enhanced restoration of the copper-contaminated soil with BHMTPMPA, the method has the characteristics of high restoration efficiency, high operability, low environmental risks and the like.
Owner:LIAONING UNIVERSITY OF PETROLEUM AND CHEMICAL TECHNOLOGY
Method for repairing copper pollution by utilizing chelating agent EDTA reinforced reed
InactiveCN110814019AEfficient repairEasy to transportContaminated soil reclamationCopper contaminationWater quality
The invention discloses a method for repairing copper pollution by utilizing chelating agent EDTA reinforced reed. The method comprises the following steps: 1) planting reeds in a copper polluted water body, adding chelating agent EDTA, and performing growth culture; and 2) removing the reed subjected to growth culture from the polluted water body, repeatedly planting, and repeating the operationuntil the content of copper in the water body is reduced to meet the requirements of the national water quality standard. According to the method, EDTA is applied to reinforce reed to repair copper pollution; the method can overcome the bottleneck of poor plant tolerance and low absorption efficiency which are common in the past, not only can purify water and obviously reduce the concentration ofheavy metal copper in the water environment, but also can recycle heavy metal enriched in the plant body, has good economic and social benefits, and is beneficial to large-scale popularization and application.
Owner:LIAONING UNIVERSITY
Method for restoring copper polluted soil with diethylenetriamine penta(methylene phosphonic acid) (DTPMPA)
InactiveCN103639188APromote degradationEasy to operateContaminated soil reclamationCopper contaminationDiethylenetriamine
The invention discloses a method for restoring copper polluted soil with diethylenetriamine penta(methylene phosphonic acid) (DTPMPA), which has the advantages of higher biodegradability and higher rinsing efficiency. The method comprises the following steps: accurately weighing 1.00g of copper polluted soil sample, adding a 10-70% DTPMPA solution in a solid-to-liquid ratio of 1:25, oscillating at room temperature, standing, centrifugating and filtering to complete the rinsing process, wherein the oscillation time is 12 hours, the standing time is 12 hours, the centrifugating speed is 4000 r / min, and the centrifugating time is 20 minutes. The copper concentration of the polluted soil is 800-2975 mg.kg<-1>. By using the DTPMPA for reinforced restoration of the copper polluted soil, the method has the characteristics of high restoration efficiency, high operability, low environmental risk and the like.
Owner:LIAONING UNIVERSITY OF PETROLEUM AND CHEMICAL TECHNOLOGY
Method for enhancing copper pollution tolerance of reeds by using gas molecule NO
InactiveCN112970777AImprove toleranceEnsure normal growth and developmentBiocidePlant growth regulatorsCopper contaminationWater quality
The invention discloses a method for enhancing copper pollution tolerance of reeds by using gas molecules NO. The method comprises the following steps: 1) planting reeds in the copper-polluted water body, adding an exogenous NO donor sodium nitroprusside, and carrying out growth culture; and (2) moving the grown and cultured reeds away from the polluted water body, and repeatedly planting and operating, so that the copper polluted water body is expected to meet the requirements of the class II water environment quality standard of surface water in China. According to the method, the copper pollution tolerance of the reeds is enhanced by applying exogenous NO, the common bottlenecks of poor plant tolerance and low absorption efficiency in the past are overcome, the copper tolerance of the reeds is improved, the normal growth of the reeds is kept, the water quality can be purified, and the concentration of heavy metal copper in a water body environment is obviously reduced. Moreover, heavy metals enriched in the plants can be recycled, so that the method has good economic benefits and social benefits and is beneficial to large-scale popularization and application.
Owner:LIAONING UNIVERSITY
Water-channel copper-polluted sediment repairing agent and preparation method thereof
ActiveCN110054371AHigh removal rateLower pHWater contaminantsFixation/solidifcation sludge treatmentOxygenMaterials science
The invention relates to the technical field of river sediment repairing, in particular to a water-channel copper-polluted sediment repairing agent and a preparation method thereof. The ageing comprises, by weight, 10-20 parts of cement, 6-10 parts of fine sand, 10-20 parts of chitosan, 1-3 parts of sulfide, 1-5 parts of quicklime, 5-15 parts of ammonium ferrous sulfate, 5-20 parts of a repairingmaterial and 50-70 parts of deionized water. The water-channel copper-polluted sediment repairing agent has the advantages of less dosoage and high repairing efficiency in repairing of sediment soil;modified polymeric iron aluminides is reacted with an iron-based compound containing Fe<2+> and OH<-> in water into Fe(OH)3, the sediment soil solidified is inhibited from activating copper and acid ions due to high pH value, and the pH value of the sediment soil solidified and leaching of copper after soil passivation are reduced; the combination of ammonium ion and hydrogen and oxygen in water reduces the pH value of strong alkaline sediment after adding cement, and and the repairing effect of agent on the sediment soil is further improves as a whole.
Owner:GUANGDONG KAIYUAN ENVIRONMENT TECH
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