The invention provides an
aqueous dispersion for chemical mechanical
polishing that can limit scratches of a specific size to a specific number, even with interlayer insulating films with small elastic moduli (
silsesquioxane,
fluorine-containing SiO2,
polyimide-based resins, and the like.). When using the
aqueous dispersion for chemical mechanical
polishing of an interlayer insulating film with an
elastic modulus of no greater than 20 GPa as measured by the
nanoindentation method, the number of scratches with a maximum length of 1 μm or greater is an average of no more than 5 per unit area of 0.01 mm2 of the
polishing surface. An
aqueous dispersion for CMP or an aqueous dispersion for interlayer insulating film CMP according to another aspect of the invention contains a scratch inhibitor agent and an
abrasive. The scratch inhibitor may be biphenol, bipyridyl, 2-vinylpyridine,
salicylaldoxime, o-phenylenediamine,
catechol, 7-hydroxy-5-methyl-1,3,4-triazaindolizine, and the like. The
abrasive may consist of
inorganic particles, organic particles or organic / inorganic composite particles. The organic / inorganic composite particles may be formed by polycondensation of an alkoxysilane, aluminum
alkoxide,
titanium alkoxide, and the like in the presence of
polymer particles of
polystyrene or the like, and bonding of polysiloxane, and the like, on at least the surface of the
polymer particles.