60results about How to "Significant growth" patented technology

A method and apparatus are described including receiving a data Packet having a data packet header, storing the received data packet as shared payload, determining if the received data packet is a first data packet, initializing a sequence starting number responsive to the determination, generating a new data packet header, calculating a sequence number for the received data packet using the sequence starting number, inserting the new sequence number into the new data packet header, unicasting the new data packet header and the shared payload to a plurality of client devices.

An air separation module comprising a bundle of hollow elongated membranes, and a pressure vessel enclosing the bundle. The pressure vessel includes an outer tube, end caps at opposite ends of the tube, and an inner tube located within the fiber bundle. The inner tube is fixedly mechanically connected at opposite ends to the end caps to form a structural spine of the pressure vessel, whereby loads acting on the air separation module are transferred between the end caps primarily by the center tube.

In melting and casting by a water-cooled crucible induction melting technique, a partition means is inserted on top portion of a melt, and a new raw material for is charged on an upper side of the partition means to continue the melting and casting. Therefore, the continuous casting can be kept while avoiding mixture of the melt on a lower side of with the melt on an upper side of the partition means. A partition plate or a partition plate with legs can be used as the partition means. When the present invention is applied to production of a silicon ingot used for a solar cell and the like, productivity is largely improved, which allows costs to be remarkably reduced in solar energy generation. Therefore, the present invention can widely be utilized as the method for casting a polycrystalline-silicon ingot for a solar cell.

The invention discloses an efficient sweet cherry fence type grafting and symbiotic cultivation technology. According to the technical scheme, fence type cultivation is utilized. The method comprisesthe steps of large seedling cultivation and transplanting before grafting, trunk grafting and cultivation of lateral branches after grafting. According to structural indexes of trees obtained after symbiotic cultivation, the height of the trees is 2.5-3.0 m, the vertical section of each trunk is 40-50 cm high, the horizontal section of each trunk is 1.8-2.3 m long, 8-12 back branches grow on eachtrunk, the back branch spacing of each trunk is 10-15 cm, the length of the back branches on each trunk is smaller than 2.0 m, the diameter of base parts of the back branches on each trunk is smallerthan 4 cm, and the effect fruit and branch proportion is 98%. The invention further discloses application of the technology in the field of cherry grafting and cultivation field. The problem that in atraditional fence type cultivation technology, back branches of cherries are not balanced in growth is solved, seedling planting is completed within two years, and the technology has the advantages that the number of layers of tree structures is small, growth is balanced, the back branches are strong, the yield is high, harvesting is early, the cherry variety is good, and mechanical harvesting isfacilitated.

It is an object of the present invention to provide a semiconductor laser device with high-yielding in which a clack generated in an epitaxial growth layer is restrained and to the manufacturing method thereof, the semiconductor laser device includes a GaN substrate 1, an n-type GaN layer 2, an n-type AlGaN cladding layer 3, a n-type GaN guide layer 4, an InGaN multiple quantum well active layer 5, an undoped-GaN guide layer 6, a p-type AlGaN electron overflow suppression layer 7, a p-type GaN guide layer 8, a SiO2 blocking layer 9, an Ni / ITO cladding layer electrode 10 as a transparent electrode, a Ti / Au pad electrode 11, and a Ti / Al / Ni / Au electrode 12. The SiO2 blocking layer 9 is formed above the InGaN multiple quantum well active layer 5 so as to have an opening. The Ni / ITO cladding layer electrode 10 is formed inside the opening, and which is transparent for the light from the InGaN multiple quantum well active layer, and serves as a cladding layer.

Barrier layers for conductive features and methods of formation thereof are disclosed. A first barrier material is deposited on top surfaces of an insulating material, and a second barrier material is deposited on sidewalls of the insulating material, wherein the second barrier material is different than the first barrier material. The first barrier material induces grain growth of a subsequently deposited conductive material at a first rate, and the second barrier material induces grain growth of the conductive material at a second rate, wherein the second rate is slower than the first rate.

Exhaust gas 2 from a coal power generator 4 may be used to provide a commercial soil additive. The exhaust gas 2 is fed to a growing cell 14 containing bio-mass material. After the bio-mass material matures, the bio-mass material is harvested to produce the commercial soil additive, which is preferably treated to produce mulch 18 and compost 20.

A system and method for conversion of alkali metals, heavy metals, halogens, and sulfur into mineral products. The system includes a single reaction vessel. To begin the process, co-reactants such as lime and clay are mixed with waste feeds containing alkali metals, heavy metals, halogens, and sulfur. This mixture is then introduced into the reaction vessel. The reaction vessel is operated under reducing conditions. After the mineral products are allowed to form, they are collected from the reaction vessel.

A system and method for a multi-sensor pixel architecture for use in a digital imaging system is described. The system includes at least one semiconducting layer for absorbing radiation incident on opposites of the at least one semiconducting layer along with a set of electrodes on one side of the semiconducting layer for transmitting a signal associated with the radiation absorbed by the semiconducting layer.

An underlying gallium nitride layer on a silicon carbide substrate is masked with a mask that includes an array of openings therein, and the underlying gallium nitride layer is etched through the array of openings to define posts in the underlying gallium nitride layer and trenches therebetween. The posts each include a sidewall and a top having the mask thereon. The sidewalls of the posts are laterally grown into the trenches to thereby form a gallium nitride semiconductor layer. During this lateral growth, the mask prevents nucleation and vertical growth from the tops of the posts. Accordingly, growth proceeds laterally into the trenches, suspended from the sidewalls of the posts. The sidewalls of the posts may be laterally grown into the trenches until the laterally grown sidewalls coalesce in the trenches to thereby form a gallium nitride semiconductor layer. The lateral growth from the sidewalls of the posts may be continued so that the gallium nitride layer grows vertically through the openings in the mask and laterally overgrows onto the mask on the tops of the posts, to thereby form a gallium nitride semiconductor layer. The lateral overgrowth can be continued until the grown sidewalls coalesce on the mask to thereby form a continuous gallium nitride semiconductor layer. Microelectronic devices may be formed in the continuous gallium nitride semiconductor layer.

The invention belongs to the technical field of the structure of constructional engineering, in particular relates to a simulated frame structure of a long-span prestressed concrete slab. The structure is as follows: after a frame column and a longitudinal frame beam are installed, single-T plates of flange-free or flange-removed prestressed hollow single-T beam slabs, multi-T box beams, trough plates or rectangular beams are installed close to two sides of the frame column; a structure erecting reinforcing bar is arranged on the frame column transversely; a bottom formwork is hung along the arris or side surface on the plate or the erecting reinforcing rib and level to the bottom of prestressed concrete slab; a reinforcing bar of a cross beam is arranged in the space formed by the formwork, connected with the reinforcing bar of the frame column and connected by using a stirrup; and finally, a frame beam, namely a simulated frame beam is formed after casting and stirring of concrete according to the specification. The section of the simulated frame beam is reduced; and the flanges of the T-shaped plates do not need to be cut off, thus the cost is reduced, and the construction benefit and the prefabrication benefit are improved.

The invention discloses a method for producing a protein feed through different mixed fermentation twice of fine-brewed brewer's grains and blueberry fruit residues, and belongs to the technical fieldof the production of protein feeds. The method specifically comprises the steps of respectively performing protospecies test tube activation, triangular flask enlarged culture and seeding tank culture on ordinary thermoactinomyces, geotrichum candidum and lactobacillus plantarum, enabling a fermenter to be subjected to standing so as to obtain bacterium suspension, and mixing cultured strains inproportion so as to obtain mixed bacteria; preparing fermentation raw materials of the fine-brewed brewer's grains, the blueberry fruit residues and bran; preparing the ordinary thermoactinomyces, thegeotrichum candidum and the lactobacillus plantarum according to a certain inoculum concentration into a solid mixed bacterium agent through sterilized bran; and mixing the prepared solid mixed bacterium agent with the fine-brewed brewer's grains and the blueberry fruit residues, performing solid fermentation, firstly performing inoculation with the ordinary thermoactinomyces, performing culturefermentation at constant temperature of 50 DEG C for the first time for 72h, then performing inoculation with the obtained geotrichum candidum and lactobacillus plantarum mixed bacteria, performing fermentation at 30 DEG C for the second time for 72h, drying fermented products, and performing crushing so as to obtain the protein feed.