The invention discloses a
wafer with an edge stepped / gentle slope type
protection ring and a manufacturing method of the
wafer. The
wafer with the edge stepped
protection ring comprises a wafer body,and the wafer body is provided with a
grinding front surface. The periphery of the wafer body is provided with a step
protection ring / slope protection ring. The preparation method comprises the stepsof pasting a
grinding pasting film on the front surface of the wafer; and
grinding the back surface of the wafer, using
etching equipment, automatically measuring the configuration thickness by an
etching process, controlling the concentration and flow of
etching liquid, automatically controlling the scaling of a blocking agent by a program to protect the edge shielding ring / edge configuration
inert fluid
nozzle to dilute and reduce the edge etching amount, etching the back surface of the wafer, and gradually reducing the height of the protection ring from outside to inside. The ultrathin wafer structure with the protection ring is used for subsequent
ion implantation, yellow light and double-sided simultaneous
metal deposition processes. The front side and back side processes can be carried out at the same time in one time of production, so that the
process time is saved. The ultrathin wafer structure with the protection ring reduces the lost area of an edge wafer.