45results about How to "Reduce the amount of diffusion" patented technology

Provided is a chip-type semiconductor ceramic electronic component having a ceramic body composed of a semiconductor ceramic, first external electrodes formed on the both end surfaces of the ceramic body, and second external electrodes extending to cover the surfaces of the first external electrodes and a part of a side surface of the ceramic body. The electronic component has a small resistance value variance and a small thermal shock resistance change, and in the electronic component, excellent substrate mounting is performed. When a curvature radius of a corner section of the ceramic body is expressed by R([mu]m), the maximum thickness of a layer brought into contact with the ceramic body, among the first external electrode layers, from an end surface of the ceramic body is expressed by y ([mu]m), and the minimum thickness of a layer brought into contact with the side surfaces of the ceramic body, among the second external electrodes, from the apex of the corner section of the ceramic body is expressed by x ([mu]m), an inequality of 20<=R<=50 is satisfied, and when 0.5<=x<=1.1, an inequality of -0.4x+0.6<=y<=0.4 is satisfied, and when 1.1<=x<=9.0, an inequality of -0.0076x+0.16836<=y<=0.4 is satisfied.

The invention relates to a method for preparing micrometer porous metal copper blocks by dealloying of copper-ferrum alloy. According to the method, plasma is adopted to activate and sinter copper-ferrum alloy, and then ferrum in the alloy is selectively corroded by utilizing a chemical dealloying method, thus obtaining porous copper blocks with high-strength micrometer apertures. According to the invention, by utilizing the characteristic that the copper-ferrum inter-atom diffusing capacity can be greatly reduced by a quick sintering process of hard miscibility of copper-ferrum alloy, which is lower than the melting point of ferrum, the dimension of a ferrous phase after sintering approaches to the particle size of micron-size material powder, so as to prepare the copper-ferrum bi-continuous three-dimensional net structured copper-ferrum alloy; the particle size of adopted copper powder is slightly smaller than that of ferrous powder, so as to form a structure that copper particles wrap ferrous particles, thus being favorable for ensuring the uniformity of aperture after corrosion; the pore structures of the porous metal copper blocks are regulated and controlled by changing the ferrous powder content and the particle size distribution; according to the process, the high-strength micrometer porous copper blocks with uniform pore distribution and adjustable pore size and porosity can be obtained; and the method has the advantages of being simple in process, low in cost and strong in practicability.

The invention discloses a method for manufacturing a SONOS device. The method for manufacturing a unit structure of a SONOS device includes the following steps: providing a silicon substrate, forming an ONO layer and a gate silicon oxide layer respectively; depositing a polysilicon layer and performing photolithography; LDD implantation; perform HALO implantation, the implanted ions include indium and boron ions. The present invention utilizes the characteristics that indium ions have a larger mass than boron ions, have a shallow and concentrated distribution after implantation, and have a smaller diffusion amount with the thermal process, and adjust the ion distribution of HALO implantation by increasing indium ion implantation. When the size of SONOS devices is continuously shrinking By increasing the indium ion implantation, the ion distribution of HALO implantation is concentrated at the bottom of the polysilicon gate, which can reduce the leakage of SONOS devices and facilitate the reduction of the size of SONOS devices, and can reduce the gate-induced drain leakage under high voltage and improve the reliability of the device. sex.

The invention discloses a method of manufacturing a floating boom discharge sharp corner. The method comprises the steps of firstly utilizing SiH4, N2O and H2 as reaction gas and generating a layer of a SiOxNy buffer layer by the low pressure chemical vapor deposition method before silicon nitride sediment, as the buffer layer for later floating boom oxidization; in forming beak, adjusting by control technology to facilitate oxygen atoms to spread transversely toward a lateral wall underlay with certain amount. The transverse size is extended and the erasing sharp corner formed finally has a transverse extension on the upper edge, which is good for resisting the influence of subsequent floating boom etching size change on the shape of the sharp corner, improving the whole erasing performance and increasing the device stability and reliability.

The invention discloses a polarizer, a production method thereof and a liquid crystal display device, relates to the technical field of display, and aims to avoid the ripples of images displayed by a liquid crystal display device. The polarizer comprises a first protecting layer, a polarizing layer, a second protecting layer and an adhering layer which are sequentially stacked, wherein elastic particles capable of absorbing pressure are arranged in the adhering layer. The liquid crystal display device comprises a display panel, an upper polarizer and a lower polarizer, wherein each of the upper polarizer and the lower polarizer is the polarizer mentioned above. The polarizer is used for converting light penetrating the polarizer into linearly polarized light with a specific polarization direction.

The invention discloses an inverse dispersion method for eliminating a Gibbs annular artifact of a magnetic resonance image. The method comprises the following steps of: reading an MR artifact image acquired through magnetic resonance imaging; calculating the gradient of each pixel from the image data and inversely diffusing the grey values of all pixels along the gradient direction; forming limiting conditions of grey value diffusion so as to make the whole diffusion process capable of adaptively adjusting the diffusion speed and to guarantee the stability of the whole diffusion process; obtaining the directional diffuseness of a diffusion equation which progresses the grey value; and updating the grey values of the pixels to acquire the corrected MR image. A high-quality image can be acquired by performing data correction on the artifact generated by cutting of the k space data.

Disclosed is a glass composition for lamps mainly containing SiO2 (silicon dioxide) and further containing 12-17 wt% of Na2O (sodium oxide), 2.5-4 wt% of MgO (magnesium oxide) and 5.3-7.3 wt% of CaO (calcium oxide) with MgO and CaO being 8-11 wt% in total. With this constitution, the glass composition can be obtained at low cost while having excellent strength and workability. Furthermore, this glass composition does not erode a melting furnace and only a small amount of alkali is dissolved therefrom.

The invention discloses a production process of a high-purity free-spraying crucible. The production process comprises the following steps of: (1) preparing silicon nitride slurry, and painting the silicon nitride slurry on the inner surface of a common quartz crucible; and (2) drying the painted crucible at 130-200 DEG C so as to obtain the high-purity free-spraying crucible which has a silicon nitride coating on the inner surface, wherein the silicon nitride slurry comprises, in percent by weight, 30-44% of silicon oxide powder with an alpha phase content of 90% or above, 15-22% of silica sol and 41-48% of deionized water. By introducing the silica sol with high-temperature viscosity into the silicon nitride slurry, the content of silicon nitride in the silicon nitride coating is reduced, and the diffusion amount of nitrogen to the surface of silicon melt is reduced; and meanwhile, the strength and density of the silicon nitride coating and adhesion of the silicon nitride coating tothe surface of the common quartz crucible are increased, and probability of adhesion and falling off of the silicon nitride coating on the surface of a silicon ingot is reduced after demoulding is conducted.