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Manufacturing method of sonos device

A manufacturing method and a technology of a manufacturing method, which are applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as reducing storage device leakage, and achieve the effect of reducing leakage

Active Publication Date: 2018-04-17
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
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AI Technical Summary

Problems solved by technology

[0002] Non-volatile storage technology includes SONOS technology. During the programming or erasing process of the memory, due to the need to operate at high voltage, it often faces the problem of reducing the leakage of storage devices, leakage and reliability of storage arrays under high-voltage application conditions.

Method used

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  • Manufacturing method of sonos device
  • Manufacturing method of sonos device
  • Manufacturing method of sonos device

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Embodiment Construction

[0023] like figure 1 Shown is the flow chart of the method of the embodiment of the present invention; Figure 2A to Figure 2F As shown, it is a device structure diagram in each step of the method of the embodiment of the present invention; the unit structure of the SONOS device in the manufacturing method of the SONOS device of the embodiment of the present invention includes a memory cell tube 11 and a selection tube 12, such as Figure 2A The top of the storage cell tube 11 formation area is shown by SONOS, and the top of the selection tube 12 formation area is shown by SG; the manufacturing method of the cell structure of the SONOS device includes the following steps:

[0024] Step 1, such as Figure 2A As shown, a silicon substrate is provided, and a deep N well is implanted in the silicon substrate to form a deep N well, and the deep N well implantation is shown as 101 .

[0025] like Figure 2B As shown, a P-well implant and a threshold voltage (VT) adjustment implan...

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Abstract

The invention discloses a method for manufacturing a SONOS device. The method for manufacturing a unit structure of a SONOS device includes the following steps: providing a silicon substrate, forming an ONO layer and a gate silicon oxide layer respectively; depositing a polysilicon layer and performing photolithography; LDD implantation; perform HALO implantation, the implanted ions include indium and boron ions. The present invention utilizes the characteristics that indium ions have a larger mass than boron ions, have a shallow and concentrated distribution after implantation, and have a smaller diffusion amount with the thermal process, and adjust the ion distribution of HALO implantation by increasing indium ion implantation. When the size of SONOS devices is continuously shrinking By increasing the indium ion implantation, the ion distribution of HALO implantation is concentrated at the bottom of the polysilicon gate, which can reduce the leakage of SONOS devices and facilitate the reduction of the size of SONOS devices, and can reduce the gate-induced drain leakage under high voltage and improve the reliability of the device. sex.

Description

technical field [0001] The invention relates to a manufacturing process method of a semiconductor integrated circuit, in particular to a manufacturing method of a SONOS device. Background technique [0002] Non-volatile storage technology includes SONOS technology. During the programming or erasing process of the memory, due to the need to operate at high voltage, it often faces the problems of reducing leakage of storage devices, leakage and reliability of storage arrays under high-voltage application conditions. [0003] In the manufacturing process of the existing SONOS device, boron (Boron) ions are implanted as Halo to suppress the leakage between the source-drain (SD) junction. The continuous shrinking of the process size is the development trend of semiconductor integrated circuits. With the shrinking of the size, how to improve the device performance? Performance is a technical problem that constantly needs to be solved. Contents of the invention [0004] The tech...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/11568H01L21/266
Inventor 熊伟张可钢陈华伦钱文生
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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