Manufacturing method of SONOS device
A manufacturing method and technology of the manufacturing method, which are applied in the manufacturing of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve problems such as reducing the leakage of storage devices, and achieve the effect of reducing leakage.
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[0023] Such as figure 1 Shown is the flow chart of the method of the embodiment of the present invention; Figure 2A to Figure 2F As shown, it is a device structure diagram in each step of the method of the embodiment of the present invention; the unit structure of the SONOS device in the manufacturing method of the SONOS device of the embodiment of the present invention includes a memory cell tube 11 and a selection tube 12, such as Figure 2A The top of the storage cell tube 11 formation area is shown by SONOS, and the top of the selection tube 12 formation area is shown by SG; the manufacturing method of the cell structure of the SONOS device includes the following steps:
[0024] Step 1, such as Figure 2A As shown, a silicon substrate is provided, and a deep N well is implanted in the silicon substrate to form a deep N well, and the deep N well implantation is shown as 101 .
[0025] Such as Figure 2B As shown, a P-well implant and a threshold voltage (VT) adjustment ...
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