45results about How to "Reduce photoelectric conversion efficiency" patented technology

A stacked photoelectric converter comprising a plurality of stacked photoelectric conversion units (3;5) each including one conductivity type layer (31;51), a photoelectric converting layer (32;52) of substantially intrinsic semiconductor, and a reverse conductivity type layer (33;53) that are formed on a substrate (1) sequentially from the light incident side. At least one of the reverse conductivity type layer (33) in the front photoelectric conversion unit (3) arranged relatively on the light incident side and the one conductivity type layer (51) in the rear photoelectric conversion unit (5) arranged contiguously to the front photoelectric conversion unit (3) includes a silicon composite layer (4). The silicon composite layer (4) has a thickness of 20-130 nm and an oxygen concentration of 25-60 atm%.

Provided is a laminate of a thermoplastic resin layer and a base, which has excellent transparency and is free from the occurrence of "warping". The laminate is suitable for sealing and surface protection of photoelectric conversion elements. This laminate is obtained by bonding a base and a thermoplastic resin layer that has a thickness larger than 200 [mu]m but 500 [mu]m or less with an adhesive layer being interposed therebetween. The 180 DEG peel strength at 23 DEG C of the thermoplastic resin layer with respect to the adhesive layer is not less than 1.0 N / 25 mm. It is preferable that the total light transmittance of the laminate is not less than 80%.

A solar cell electrode printing screen comprises a first screen and a second screen; the first screen comprises a first template; a plurality of first thin grids are formed in the first template; the first template is provided with alignment holes and wedge-shaped holes; the second screen comprises a second template; the second template is provided with a plurality of second thin grids and main grids; the second thin grids and the main grids are intersected; the distance between axes of the adjacent two second thin grids is equal to that between axes of the adjacent two first thin grids; the width of the second thin grids is smaller than or equal to that of the first thin grids; the main grids are provided with alignment portions; one ends of the main grids are provided with sharp corner hollow-outs; the shortest distance between edges of the alignment portions and end surfaces of the top ends of the sharp corner hollow-outs is equal to that between the edges of the alignment holes and the edges of the wedge-shaped holes. According to the solar cell electrode printing screen, substrates after the second screen and the first screen are printed are accurately aligned and dislocation of a thin grid line during printing at the second time and a thin grid line during printing at the first time is avoided. The invention also provides a solar cell electrode and a manufacturing method thereof.

The invention discloses a photovoltaic solar energy system, comprising a solar panel main body, connecting components are arranged on both sides of the solar panel main body, a cleaning mechanism is arranged between the two connecting components, and the cleaning mechanism is located on the solar panel main body On the outer side of the upper end, the upper end of the connection assembly is provided with an air pump, and the lower side of the upper outer surface of the solar panel main body is provided with an extrusion assembly, and both ends of the extrusion assembly are connected to the two connection assemblies through bolts Connection, and can connect and fix two adjacent solar panel main bodies through this component structure, and at the same time, through its lower fixing plate structure, it can be snapped and fixed on the surface of roof tiles, so that the whole component is evenly stressed, and at the same time, by adding a cleaning mechanism , not only can clean the dirt on the surface of the main body of the solar panel, but also can clean the snow through this mechanism in case of snow accumulation in the high cold, so as to ensure the normal operation of the equipment.

The invention discloses a perovskite solar cell based on a Spiro‑OMeTAD / PbS composite hole transport layer and a preparation method thereof. The perovskite solar cell consists of a transparent conductive substrate, an oxide electron transport layer, a perovskite light absorbing layer, a Spiro‑OMeTAD / PbS composite hole transport layer, and a metal electrode. The perovskite thin-film solar cell adopts an evaporation method with a simple process and can be used for large-scale production to prepare a lead sulfide thin film, which is inserted between Spiro-OMeTAD and the metal electrode layer as a buffer layer. This perovskite solar cell based on the Spiro‑OMeTAD / PbS composite hole transport layer achieved a high photoelectric conversion efficiency of 15.11%. As a buffer layer between the hole transport layer and the metal electrode, lead sulfide has higher hole mobility, better humidity stability and photothermal stability, which can reduce the recombination of electron-hole pairs and improve battery stability. sex. Compared with other buffer layer materials, lead sulfide can improve device performance while protecting the device, and has a positive role in promoting the industrialization of solar cells.

The invention relates to a dye sensitization nanometer crystal solar cell and its manufacturing method which is used the medium holes oxide gel as the quasi solid electrolyte. In the solar cell, the medium holes oxide quasi solid electrolyte is set to replace the liquid electrolyte at the surface of the wide-gap semiconductor nanometer crystal film absorbed the photosensitizer. The solar cell is utilized the medium holes oxide hole-channel structure to supply transmission channel for the anion. It can effectively solve the solvent leaking problem in the electrolyte at the condition that the photoelectric conversion efficiency of the cell is not sharply reduced.

An image sensor and a forming method thereof are provided. The image sensor includes a substrate including a first pixel region and a second pixel region; a substrate surface in the first pixel regionprovided with a first filter lay for passing monochromatic light; a second filter layer for transmitting natural light on the surface of the substrate in the second pixel region; a first anti-reflective structure located in a first pixel region, the first anti-reflective structure comprising one or both of a first anti-reflective coating and a second anti-reflective coating, the first anti-reflective coating being located between the first filter layer and the substrate, the second anti-reflective coating being located on the first filter layer; a second anti-reflective structure located in the second pixel region, the second anti-reflective structure having a thickness smaller than the first anti-reflective structure, the second anti-reflective structure comprising one or both of a thirdanti-reflective coating and a fourth anti-reflective coating, the third anti-reflective coating being located between the second filter layer and the substrate, and the fourth anti-reflective coatingbeing located on the second filter layer. The performance of the image sensor is improved.