Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solar battery piece diffusion process

A solar cell and diffusion process technology, applied in the field of solar cell diffusion technology, can solve the problems of low-efficiency crystalline silicon solar cells, poor uniformity of surface square resistance, and poor short-wave response of cells, etc. Spectral responsivity and the effect of improving absorption rate

Inactive Publication Date: 2019-04-12
TONGWEI SOLAR ENERGY (CHENGDU) CO LID
View PDF6 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Diffusion is an important process in the production process of crystalline silicon solar cells. The traditional diffusion process uniformly dopes the surface of crystalline silicon solar cells. High, but the high impurity concentration on the surface leads to band shrinkage in the diffusion region, lattice distortion, increased defects, obvious "dead layer", poor short-wave response of the battery; in order to obtain high-efficiency crystalline silicon solar cells with good short-wave response, the crystalline silicon wafer Diffusion develops in the direction of high square resistance
The current diffusion method for crystalline silicon solar cells is as follows: place the crystalline silicon wafer in a horizontal diffusion furnace cavity, and pass in a mixed gas, which is composed of nitrogen and phosphorus oxychloride in proportion, and is in a state of normal pressure. Diffusion of crystalline silicon wafers, the uniformity of the surface sheet resistance in the crystalline silicon wafers obtained after diffusion processing is poor, and when high surface sheet resistance is produced, it is easy to cause low-efficiency crystalline silicon solar cells in the subsequent production process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar battery piece diffusion process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the present invention will be further described in detail below in conjunction with specific embodiments.

[0030] Diffusion is to make a PN junction. P-type silicon wafers are placed in a diffusion furnace, and N-type impurity atoms are diffused from the surface layer of the silicon wafer to the interior of the silicon wafer through the gaps between silicon atoms to form a PN junction, making electrons and air The hole will not return to the original place after flowing, so that an electric current is formed, which makes the silicon wafer have a photovoltaic effect. The large nitrogen mentioned in this application refers to pure nitrogen, while the small nitrogen refers to nitrogen carrying a phosphorus source (phosphorus oxychloride).

[0031] The invention provides a solar cell sheet diffusion process, comprising the following steps:

[0032] A. Put the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a solar battery piece diffusion process. The solar battery piece diffusion process comprises the following steps of B, heating a furnace chamber of a diffusion furnace to a first temperature, and continuously introducing pure nitrogen; C, maintaining the furnace chamber at the first temperature, and introducing pure nitrogen and oxygen to the furnace chamber to oxidize thebattery piece; D, carrying out low-temperature diffusion at the first temperature, and continuously introducing pure nitrogen, phosphorus source-carrying nitrogen and oxygen into the furnace chamber in the process; E, heating the furnace chamber of the diffusion furnace to a second temperature, simultaneously pumping phosphorus atoms, and continuously introducing pure nitrogen; F, maintaining thefurnace chamber at the second temperature and carrying out high-temperature diffusion, and continuously introducing pure nitrogen, phosphorus source-carrying nitrogen and oxygen into the furnace chamber in the process; G, heating the furnace chamber of the diffusion furnace to a third temperature, and simultaneously pumping the phosphorus atoms, and continuously introducing pure nitrogen; H, continuously pumping the phosphorus atoms at the third temperature, and continuously introducing pure nitrogen and oxygen into the furnace chamber in the process; and I, performing cooling and carrying outoxidation and simultaneously pumping the phosphorus atoms, and continuously introducing pure nitrogen and oxygen into the furnace chamber in the process.

Description

technical field [0001] The invention relates to a process for making a PN junction by diffusing a solar battery sheet. Background technique [0002] A solar cell, also known as a photovoltaic cell, is a semiconductor device that converts the sun's light energy directly into electrical energy. Because it is a green product, does not cause environmental pollution, and is a renewable resource, solar cells are a new energy source with broad development prospects in today's energy shortage situation. [0003] Diffusion is an important process in the production process of crystalline silicon solar cells. The traditional diffusion process uniformly dopes the surface of crystalline silicon solar cells. High, but the high impurity concentration on the surface leads to band shrinkage in the diffusion region, lattice distortion, increased defects, obvious "dead layer", and poor short-wave response of the battery; in order to obtain high-efficiency crystalline silicon solar cells with ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/225H01L31/068
CPCH01L21/2256H01L31/068H01L31/1804Y02E10/547Y02P70/50
Inventor 张冠纶扈静李跃
Owner TONGWEI SOLAR ENERGY (CHENGDU) CO LID
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products