Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Manufacturing method of N-type solar battery

A technology of solar cells and manufacturing methods, applied in the manufacture of circuits, electrical components, final products, etc., can solve the problems of low photoelectric conversion efficiency, achieve the effect of improving photoelectric conversion efficiency and reducing metal impurities

Active Publication Date: 2012-10-03
YINGLI ENERGY CHINA
View PDF4 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the photoelectric conversion efficiency of existing N-type solar cells is relatively low. Therefore, how to improve the photoelectric conversion efficiency of N-type solar cells is an urgent problem to be solved in the development of N-type solar cells.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of N-type solar battery
  • Manufacturing method of N-type solar battery
  • Manufacturing method of N-type solar battery

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0026] As described in the background technology, the photoelectric conversion efficiency of the existing N-type solar cells is relatively low. The inventors have found that the existing N-type solar cell manufacturing methods cannot effectively remove the metal impurities on the surface of the silicon wafer. When boron is diffused, it will diffuse into the silicon wafer in a high-temperature diffusion furnace, forming a carrier recombination center inside the silicon wafer, reducing the lifetime of minority carriers inside the silicon wafer, and further reducing the photoelectric conversion efficiency of the N-type solar cell.

[0027] refer to figure 1 , figure 1 It is a schematic flow chart of a common N-type solar cell manufacturing method in the prior art, including:

[0028] Step S11: providing a silicon wafer to be processed.

[0029] Step S11: removing the damaged layer on the surface of the silicon wafer.

[0030] The silicon wafer to be treated is cleaned with a m...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a manufacturing method of an N-type solar battery. The method comprises the following steps of: providing a silicon wafer to be treated; removing a damaged layer on the surface of the silicon wafer; carrying out surface texturing on the silicon wafer; washing the silicon wafer to remove metal impurities remaining on the surface of the silicon wafer; and carrying out boron diffusion on the dried silicon wafer. According to the technical scheme disclosed by the invention, parts of the metal impurities on the surface of the silicon wafer can be removed in a working procedure of removing the damaged layer; after the silicon wafer is textured and before the boron diffusion is carried out, the silicon wafer is washed; a reagent which does not damage surface textured face of the silicon wafer, does not influence the boron diffusion effect of the silicon wafer and is used for transferring the metal impurities on the surface of the silicon wafer into a compound which can be dissolved into water is used for washing the silicon wafer to remove the residual metal impurities on the surface of the silicon wafer, so that the diffusion and blocking quality is guaranteed in the boron diffusion process, and the photoelectric conversion efficiency of the N-type solar battery is further improved.

Description

technical field [0001] The invention relates to the technical field of solar cell manufacturing technology, and more specifically, relates to a method for manufacturing an N-type solar cell. Background technique [0002] In today's increasingly serious energy crisis, the development of new energy has become a major topic in the field of energy. Solar energy has become a main object of new energy development and research because of its characteristics of non-pollution, inexhaustibility, and no regional restrictions. [0003] Photovoltaic power generation using solar cells is a major way of utilizing solar energy today. The carrier of solar cells is a silicon wafer, which can be divided into P-type solar cells and N-type solar cells according to the different doping types of the silicon wafers. Among them, N-type solar cells have become a major research topic in the photovoltaic industry due to their more stable performance and longer minority carrier life than P-type solar ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18
CPCY02P70/50
Inventor 张伟李高非胡志岩熊景峰
Owner YINGLI ENERGY CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com