Image sensor, electronic device and manufacturing method thereof

Abstract

The present disclosure relates to an image sensor, an electronic device, and a manufacturing method thereof. In one embodiment, the present disclosure relates to a substrate of an image sensor, the substrate comprising a first substrate; and a second substrate; the first substrate has a groove, the second substrate is formed in the groove of the first substrate, and the band gap of the second substrate is wider than the first substrate.

Description

Technical field [0001] The present disclosure generally relates to the field of semiconductor technology, and more specifically, to image sensors, electronic devices and manufacturing methods thereof. Background technique [0002] In recent years, solid-state image sensors such as video cameras or digital still cameras generally use CCD image sensors or CMOS (Complementary Metal Oxide Semiconductor) image sensors, which are not only used in the consumer electronics field, such as miniature digital cameras, mobile phone cameras, video cameras, and digital cameras. In SLRs, it has also been widely used in automotive electronics, surveillance, biotechnology and medicine. [0003] With the increasing demands on pixel size, the number of pixels in image sensors is rapidly increasing, or the size of image sensors is rapidly shrinking. However, as the number of pixels increases or the size decreases, the interval between adjacent pixels in the image sensor becomes smaller, which creates ...

AI Technical Summary

Problems solved by technology

Charge leaking into surrounding color pixels (i.e., R pixels, G pixels, and B pixels) can undesirably color these color pixels, causing image distortion to occur

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