The invention relates to a
back structure of an
electron multiplying charge-coupled device (EMCCD) and a production method of the
back structure. The
back structure comprises an EMCCD
chip,
electrode extracting regions, a photosensitive region, a storage grain region,
ion implanting regions, an antireflection film and a
metal shielding layer, wherein the
electrode extracting regions are arranged on two sides of the back side of the EMCCD
chip; bonding graphs are arranged on the
electrode extracting regions at intervals; the photosensitive region and the storage grain region on the back side of the EMCCD
chip are positioned between the electrode extracting regions; the
ion implanting regions formed by implanting low-energy ions are separately formed inside the photosensitive region and the storage grain region; by using the antireflection film on the surface of the photosensitive region, a
standing wave effect can be reduced, and reflected light rays are reduced; by using the
metal shielding layer on the surface of the storage grain region, transmission of incident light on the surface of the storage grain region can be prevented. The back structure disclosed by the invention can be used for improving the
photoelectric conversion efficiency of the EMCCD; meanwhile, the manufacturing cost of the device also can be reduced, and the rate of finished products is improved.