High-power semiconductor laser beam combining method

Abstract

The invention provides a high-power semiconductor laser beam combining method. By the method, a laser beam combining light source with fine uniformity, high energy density and half-sized beam diameter can be obtained. The high-power semiconductor laser beam combining method includes the steps: respectively performing fast axis and slow axis collimation for laser beams emitted by semiconductor laser units of a semiconductor laser stack; enabling the collimated laser beams to pass a beam combining device, horizontally emitting parts of the laser beams along an incident optical axis or after double refraction, vertically shifting parts of the laser beams, enabling the other parts of the laser beams to be parallel to the horizontally emitted laser beams after two-time total reflection, and emitting the laser beams in a plug-in beam combining manner.

Description

technical field [0001] The patent of the invention belongs to the field of laser application, and specifically relates to a high-power semiconductor laser beam combination method. Background technique [0002] Semiconductor lasers have the advantages of small size, light weight, high reliability, long service life, and low power consumption. They have been widely used in various fields of the national economy. However, the current popularization and application of semiconductor lasers is restricted by the quality of their beams. The beam quality, brightness and power of semiconductor lasers are important research directions at present. Laser beam combining technology has developed rapidly in recent years. It is a process of improving beam quality, increasing output power, and increasing power density. Laser beam combining technology has been widely used in laser processing and high power fiber coupling products. [0003] Currently commonly used laser beam combining methods...

AI Technical Summary

Problems solved by technology

Since the polarization degree of the laser light source of a semiconductor laser is about 90%, for example, the polarized light emitted by a semiconductor laser with a polarization state of TE generally contains 90% of TE polarized light and 10% of TM polarized light, so if polarization combining is used, the light energy The loss is large, and it is only suitable for beam combining in the direction of the fast axis, and the output light is mixed polarized light, which cannot be combined with other light sources again; when using a semiconductor laser array as a light source, the output spot still remains between bar and bar The luminous dead zone between, the uniformity is poor

Wavelength beam combining is the combination of laser beams of different wavelengths, but it cannot be applied in the occasion where the laser has a single wavelength, which makes it limited in the application field

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