The invention discloses a preparation method of a radio frequency and very high frequency based double frequency magnetron sputtering film, which is implemented by using a double-target magnetron sputtering device, and comprises the following steps: (1) installing targets for preparing a two-component film, and putting a cleaned substrate into a vacuum chamber, wherein the distance between the center of a sputtering target to the center of a substrate platform is 130 mm; (2) vacuumizing the vacuum chamber to be 5*10<-4> Pa, then feeding argon into the vacuum chamber, and under the condition that the flow of argon is 30 sccm, keeping the pressure of the vacuum chamber at 5 Pa; (3) applying a very high frequency power supply with a frequency of 60 MHZ on one of the targets, adjusting the very high frequency power to be 150 W, applying a radio frequency power supply with a frequency of 2 MHZ on the other target, and adjusting the radio frequency power to be 50-250 W; preparing a two-component film on the substrate by sputtering. By using the frequency decoupling performance between radio frequency and very high frequency, the respective independent control on the ion energies of double sputtering targets is realized, and the approximation of plasma properties (energy, density) of each sputtering target is avoided, thereby facilitating the independent control on each component sputtering.