38results about How to "Realize independent control" patented technology

The invention relates to a method for independently regulating the spin-orbit coupling parameters of semiconductor quantum wells, which belongs to the technical field of semiconductor spin electronics. The specific steps include: selecting semiconductor quantum well samples with asymmetric doping and controllable metal gates; loading the step samples into a piston sleeve type electrical measurement high-pressure chamber, applying pressure and grid voltage to the samples; using anti-weak local The spin-orbit coupling parameters of Rashba and Dresselhaus were obtained by chemical measurement, and the independent regulation of the two spin-orbit coupling parameters was achieved by simultaneously adjusting the pressure and the gate voltage. The method for regulating the spin-orbit coupling strength parameter of the semiconductor quantum well provided by the present invention has high feasibility, can be performed in situ, does not need to prepare new samples, can realize independent regulation of two parameters, and has remarkable regulation effect.

The invention discloses a preparation method of a radio frequency and very high frequency based double frequency magnetron sputtering film, which is implemented by using a double-target magnetron sputtering device, and comprises the following steps: (1) installing targets for preparing a two-component film, and putting a cleaned substrate into a vacuum chamber, wherein the distance between the center of a sputtering target to the center of a substrate platform is 130 mm; (2) vacuumizing the vacuum chamber to be 5*10<-4> Pa, then feeding argon into the vacuum chamber, and under the condition that the flow of argon is 30 sccm, keeping the pressure of the vacuum chamber at 5 Pa; (3) applying a very high frequency power supply with a frequency of 60 MHZ on one of the targets, adjusting the very high frequency power to be 150 W, applying a radio frequency power supply with a frequency of 2 MHZ on the other target, and adjusting the radio frequency power to be 50-250 W; preparing a two-component film on the substrate by sputtering. By using the frequency decoupling performance between radio frequency and very high frequency, the respective independent control on the ion energies of double sputtering targets is realized, and the approximation of plasma properties (energy, density) of each sputtering target is avoided, thereby facilitating the independent control on each component sputtering.