Preparation method of ordered ferroelectric topological domain structure array
A technology of topological domains and arrays, which is applied in the field of preparation of ordered ferroelectric topological domain structure arrays, can solve the problems of low density of single topological domains, harsh forming conditions, and difficult to control, and achieves convenient and time-saving preparation, low preparation cost, Easy-to-use effects
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[0034] The preparation method of the ordered ferroelectric topological domain structure array of this embodiment comprises the following steps:
[0035] S1: Preparation of rhombohedral phase PZT thin films by pulsed laser deposition: Selecting (001) orientation of SrTiO 3 (STO) single crystal substrate on which 40 nm thick SrRuO was deposited by laser pulse deposition 3 (SRO) film is used as the bottom electrode, and the preparation parameters of the pulsed laser deposition method are as follows:
[0036] Energy (mJ / cm 3 )
Pulse frequency (Hz) temperature(℃) Oxygen pressure (Pa) 56 5 680 15
[0037] S2: Select a PZT target with Zr:Ti=7:3, and deposit a PZT film with a thickness of 80 nm by pulsed laser deposition on the STO substrate deposited with a layer of SRO film. The preparation parameters of the pulsed laser deposition method are as follows:
[0038] Energy (mJ / cm 3 )
Pulse frequency (Hz) temperature(℃) Oxygen pressur...
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