A preparation method of an ordered ferroelectric topological domain structure array

Abstract

The invention relates to a preparation method of an ordered ferroelectric topological domain structure array, which comprises the following steps: S1: Depositing a layer of SRO conductive layer on the STO single crystal substrate in the (001) direction by using pulsed laser deposition method as the bottom electrode ; S2: Select a PZT target with Zr:Ti=7:3, and deposit a layer of rhombohedral PZT film on the SRO conductive layer by pulsed laser deposition; S3: transfer a single layer of PS beads to the surface of the PZT film as a mask, It is then etched with oxygen plasma, and then placed in an ion beam etching machine for etching. Finally, the remaining single-layer PS bead mask is removed to obtain an ordered diamond-phase PZT nano-dot array, which is a central topology. domain structure. The ordered ferroelectric topological domain structure array prepared by the invention reaches the nanometer level, and is a high-density ordered nano-dot array structure. The ferroelectric topological domain structures are independent of each other, can be tuned by an external electric field, and have good thermal stability.

Description

technical field [0001] The invention relates to the technical field of ferroelectric materials, in particular to a method for preparing an ordered ferroelectric topological domain structure array. Background technique [0002] With the advent of the era of big data, traditional storage devices are difficult to meet the growing storage needs, which promotes the continuous transformation of storage devices. In recent years, memory has experienced the evolution from volatile memory to non-volatile memory and then to new non-volatile memory, and its storage performance has been greatly improved. Among them, ferroelectric memory has attracted widespread attention because of its excellent storage performance. It has the function of fast read and write access of dynamic random access memory, and can also retain data after the power is turned off. It can be stored quickly at very low power requirements and is expected to be widely used in small consumer devices. Applications. As ...

AI Technical Summary

Problems solved by technology

People have tried a variety of ways to prepare ferroelectric topological domains, and found that the density of single topological domains (ferroelectric vortex domains or central domains) induced by electric fields on thin films or bulks is low and difficult to integrate; The topological domain array (vortex domain) has defects such as harsh formation conditions and difficult control

Therefore, there are still great challenges in the preparation and controllable operation of ferroelectric topological domains.

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