38results about How to "Prevent diffusion from entering" patented technology

The invention provides a solar-blind photodetector and a preparation method thereof. The solar-blind photodetector comprises: a gallium oxide substrate containing a gallium oxide epitaxial layer; a source electrode and a drain electrode respectively form Schottky contacts with the gallium oxide substrate The silicon oxide passivation layer is formed on the gallium oxide substrate, the source and the drain; the groove in the gallium oxide substrate is opened from the silicon oxide passivation layer; the aluminum oxide layer is formed on the bottom of the groove and the groove Trench sidewalls; gates, over the aluminum oxide layer of the trench and over the silicon oxide passivation layer. The invention adopts a specific three-terminal structure, and the carrier concentration of the channel can be adjusted through the gate, so that the dark current of the device can be adjusted conveniently.

A closed type dust removal device for a printing press comprises a cleaning box communicated with an inlet of the printing press, and a supporting plate inclining in the direction backing on to the printing press is arranged on the top of the inner side of the cleaning box and divides the cleaning box into a dust removing area and a cleaning area. A hairbrush and a dust exhaust mechanism are arranged in the dust removing area, and an air blowing mechanism is arranged in the cleaning area. The air blowing mechanism comprises a dust blowing pipe and an air curtain pipe. The dust blowing pipe is arranged in a cavity of the supporting plate, the air blowing direction of the dust blowing pipe is oblique, air blown out from the dust blowing pipe can raise dust on paper and attachments brushed up by the hairbrush, and the dust and the attachments can be exhausted by the dust exhaust mechanism. The air curtain pipe comprises a vertical segment and a horizontal segment, the vertical segment is arranged on one side of the inlet of the printing press, the air outlet direction of the vertical segment faces the other side of the inlet, and then an air curtain closing the inlet is formed; the horizontal segment is arranged on one side of the cleaning box, the air outlet direction of the horizontal segment faces the other side of the cleaning box, and then an air curtain closing the paper face is formed. According to the closed type dust removal device for the printing press, the dust on the paper is effectively cleared through cooperation of the hairbrush, the air blowing mechanism and the dust exhaust mechanism, and printing quality is guaranteed.

The invention relates to a composition with a constipation prevention and treatment effect, and a preparation method and an application thereof. Effective components in the composition are a first polymer and a second polymer, wherein the first polymer and the second polymer are obtained through glycosidic bond polymerization of monosaccharide and / or uronic acid of monosaccharide, the polymerization degree of the first polymer is an integer of 2-100, the polymerization degree of the second polymer is an integer of 10-3000, and the mass ratio of the first polymer to the second polymer is 1:3-1:6. The composition disclosed by the invention is suitable for tumor-associated diarrhea, has a bidirectional regulation effect on constipation and diarrhea, and can be taken for a long time.

The invention relates to a method for realizing anhydrous anaerobic operation and a ring manganese reaction production process of methyl cyclopentadienyl manganese by the method. The method comprises the following steps: (1) arranging a micro-positive pressure breather valve on a venting pipeline of a reaction still, and injecting inert gas to keep the micro-positive pressure state in the reaction still before feeding, wherein the gauge pressure of the micro-positive pressure is not greater than 400 Kpa; and (2) filling the reaction still with micro-flow inert gas through a small-range flowmeter, and opening a charging hole for charging, wherein inert gas always flows out of the still, and the flow of inert gas is controlled within 20-200 L / minute. According to the method, the reaction still is capable of using inert gas as less as possible and completing material charging and discharging under the protection of inert gas, so that the risk of reaction failure is decreased.

A semiconductor device and a method for forming the same, wherein the method for forming the semiconductor device includes: providing a substrate, the substrate including a first semiconductor layer, an insulating layer positioned on the surface of the first semiconductor layer, and a second semiconductor layer positioned on the surface of the insulating layer, The substrate has a first region, a second region and a third region, the second region is adjacent to the first region and the third region, wherein the thickness of the insulating layer in the first region and the third region is greater than that of the insulating layer in the second region The bottom surface of the insulating layer in the first region, the second region and the third region is flush; the gate structure is formed on the surface of the second semiconductor layer in the second region; the first region and the third region on both sides of the gate structure A doped region is formed in the second semiconductor layer. The thickness of the insulating layer under the gate structure of the present invention is smaller than the thickness of the insulating layer under the doped region. Since the effective resistance of the insulating layer under the gate structure is small, the threshold voltage of the semiconductor device can be effectively improved.

A semiconductor structure and its forming method, wherein, the forming method includes: providing a substrate; forming a gate dielectric layer on the substrate; performing a ventilation treatment on the gate dielectric layer to form a modified gate dielectric layer; A work function layer is formed on the modified gate dielectric layer; a gate layer is formed on the work function layer. The ventilation treatment can make nitrogen atoms fill the vacancies and gaps in the gate dielectric layer, thereby preventing the metal atoms in the work function layer from diffusing into the gate dielectric layer, thereby reducing the change of the work function of the gate dielectric layer , thereby reducing the drift of the threshold voltage of the formed semiconductor structure, and reducing the instability of the bias voltage of the formed semiconductor structure.

The invention discloses a refrigeration house air curtain system capable of forming a positive pressure space. A refrigeration house door through which goods enter and exit is installed in a refrigeration house; a refrigeration house-out static pressure box and a refrigeration house-in static pressure box are correspondingly arranged on the inner side and the outer side of the top of the refrigeration house door; the top of the refrigeration house-out static pressure box communicates with air outlets in the bottoms of a plurality of refrigeration house-out fans and communicates with air outlets in the bottoms of a plurality of refrigeration house-in fans; a plurality of refrigeration house-out air supply channels with downward openings are formed in an opening in the bottom of the refrigeration house-out static pressure box; a plurality of refrigeration house-in air supply channels with downward openings and a plurality of refrigeration house-in positive pressure air supply outlets areformed in an opening in the bottom of the refrigeration house-in static pressure box; and refrigeration house-in air return channels and refrigeration house-out air return channels which are used forair return are correspondingly formed inside and outside the refrigeration house door for the air return. The refrigeration house air curtain system is good in heat insulation effect, and air curtains can be used for forming the closed positive pressure space inside and outside the refrigeration house, so that air outside the refrigeration house is effectively prevented from being diffused into the refrigeration house, the temperature in the refrigeration house is kept stable, and the quality of the goods stored in the refrigeration house is ensured.

The invention provides a semiconductor structure and a formation method thereof. The method comprises the following steps: providing a substrate, wherein the substrate comprises a first region and a second region, and the substrate has an isolation structure; forming a protection layer on the second region substrate and the second region isolation structure; forming a doping layer on the first region substrate, the first region isolation structure and the protection layer; carrying out annealing treatment on the doping layer to enable doping ions in the doping layer to diffuse into the first region substrate to form a first doped region; and after carrying out annealing treatment on the doping layer, removing the doping layer. The method enables the performance of the semiconductor structure to be good, and the formation process of the semiconductor structure is simple.

A semiconductor structure and its forming method, the forming method comprising: providing a substrate and fins protruding from the substrate, the material of the fins contains germanium, the substrate has an isolation layer covering the side walls of the fins, and isolating The top of the layer is lower than the top of the fin; an atomic layer deposition process is used to form a dummy gate oxide layer on the top and side walls of the fin exposed by the isolation layer, and the process temperature of the atomic layer deposition process is the first temperature; a dummy gate oxide layer across the fin is formed. Gate, the dummy gate covers the surface of the dummy gate oxide layer; a dielectric layer is formed on the isolation layer, the dielectric layer covers the sidewall of the dummy gate and exposes the top of the dummy gate; removes the dummy gate and dummy gate oxide layer, exposing the top of the fin and part of the sidewall ; Forming an interface layer on the exposed top and sidewall of the fin, the process temperature for forming the interface layer is a second temperature, and the second temperature is less than or equal to the first temperature. The invention can prevent the germanium element in the fin from diffusing into the interface layer, thereby improving the interface characteristics between the interface layer and the fin, and enhancing carrier mobility.

The invention discloses a solar cell having back surface field structures and a manufacturing method of the solar cell. The cell comprises a wafer, a dielectric layer, multiple back surface filed structures, a metal barrier layer and a conductive rubber layer. The improvement of the manufacturing method mainly lies in the fact that before forming the conductive rubber layer, the metal barrier layer is formed on the surface of the dielectric layer, and the material is silver, molybdenum, titanium-tungsten alloy, tungsten, titanium, chromium, molybdenum-tungsten alloy, platinum, gold, nickel or alloy of any combination of the materials mentioned above. By using the metal barrier layer as a surface barrier of the dielectric layer, the material of the conductive rubber layer can be prevented from diffusing in the dielectric layer in the sintering process, and further, the damage of the conductive rubber layer to the dielectric layer can be avoided, so that the dielectric layer has good quality and good effect of reducing the carrier recombination rate, and the cell conversion efficiency can be increased.

The invention provides a CIGS (Copper Indium Gallium Selenide)-based thin-film solar cell and a manufacturing method thereof. The CIGS-based thin-film solar cell comprises a substrate, a back electrode layer covering the surface of the substrate, a light absorption layer covering the back electrode layer, a buffer layer covering the light absorption layer, a transparent conducting layer covering the buffer layer, and an aluminum oxynitride silicon film layer covering the transparent conducting layer, or a composite film layer alternatively constructed by a zinc oxide silicon film layer and a silicon oxynitride film layer. Through the aluminum oxynitride silicon film layer or the composite film layer, external water molecules can be effectively prevented from entering the thin-film cell, and the decreasing degree of the efficiency of the thin-film solar cell is reduced. Meanwhile, an anti-reflection effect can be achieved, and the light absorption layer through which incident light reaches the cell is added, so that the short-circuit current of the thin-film cell can be increased.

The barrier layer of thin film solar cell with a flexible substrate is composed of a metallic nickel layer or metallic titanium layer with 30-50nm thickness. It can prevent from metallic aluminum of back electrode entering into main body of cell at preparation of cell. Forming a barrier layer between back electrode and silicon-based film of cell doesní»t influence reflection of incident light, and meanwhile increases its light path action in absorbing layer of cell.

The invention discloses a transition layer for a CIGS-based film photovoltaic cell and a preparation method of the transition layer. The preparation method comprises the steps of: providing a soda-lime glass substrate, forming a transition layer covering the surface of the soda-lime glass substrate, forming a molybdenum layer covering the transition layer, forming a light absorbing layer having a copper pyrite structure and covering the molybdenum layer, forming a buffer layer covering the light absorbing layer, and forming a window layer covering the buffer layer. According to the invention, the transition layer is deposited on the surface of the glass substrate, thus the adhesion problem between a molybdenum electrode layer and the glass substrate can be efficiently solved, and sodium materials can be prevented from uncontrollably diffusing into the light absorbing layer.