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High dielectric coefficient gate dielectric material hafnium aluminate fil mand preparing method thereof

A technology with high dielectric coefficient and gate dielectric, applied in the field of microelectronic materials, can solve problems such as high grain boundary leakage current, large oxygen diffusivity, and reduce device capacitance, and achieve high thermodynamic stability

Inactive Publication Date: 2004-01-28
NANJING UNIV
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  • Abstract
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  • Application Information

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Problems solved by technology

Polycrystalline thin films cause high grain boundary leakage currents
At the same time, HfO 2 It has a large oxygen diffusion rate, so during the preparation of the film, oxygen in the surrounding environment will react with silicon, causing the formation of a low dielectric constant interface layer and reducing the capacitance of the entire device

Method used

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  • High dielectric coefficient gate dielectric material hafnium aluminate fil mand preparing method thereof
  • High dielectric coefficient gate dielectric material hafnium aluminate fil mand preparing method thereof
  • High dielectric coefficient gate dielectric material hafnium aluminate fil mand preparing method thereof

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Embodiment 1

[0045] The preparation method of embodiment 1 HAO film, its preparation steps are as follows:

[0046] (1) Preparation of HAO ceramic targets; pure HfO 2 and Al 2 o 3 The powder is mixed according to the molar ratio of 1:1, fully milled by a ball mill for 20 hours, and the mixed powder is cold-pressed into a disc of Φ21mm×4mm under a pressure of 14MPa, and the disc is sintered at 1500°C in a box-type resistance furnace 6 hours to make a dense off-white HAO ceramic target, set aside;

[0047] (2) Selection and treatment of substrate material: use n-type silicon wafer Si(100) with a resistivity of 2Ω.cm. First, put the silicon wafer in acetone and clean it in an ultrasonic machine for 4 minutes. Ultrasonic cleaning with deionized water for 4 minutes, then rinsed with flowing deionized water twice, and finally etched with hydrofluoric acid solution to remove SiO on the surface 2 ,spare;

[0048] (3) The HAO ceramic target is placed on the target platform 1, the silicon subst...

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Abstract

Through ball mill mixing, the powder of hafnium oxide and alumina is cold pressed to piece. Then, ceramics target of hafnium aluminate is made through agglomeration under high temperature. Based on pulse laser deposit (PLD) technique, under high vacuum and low oxygen partial pressure, peeling off ceramic target of hafnium aluminate and generating laser plasma deposited on silicon substrate to produce amorphous hafnium nitronic aluminate film. The film possesses the features of high thermodynamic stability, higher dielectric coefficient and low leakage current. The performance index of the product reaches advanced stage of international similar products and meets practical application requirement of MOSFET with not high power consumption.

Description

1. Technical field [0001] The invention belongs to the field of microelectronic materials, and in particular relates to a high-permittivity gate dielectric material applied in a metal-oxide-semiconductor field effect transistor (MOSFET) and a preparation method thereof. 2. Background technology [0002] In silicon-based semiconductor integrated circuits, metal-oxide-semiconductor field effect transistors (MOSFETs) are the basic units that constitute memory units, microprocessors, and logic circuits. Its volume is directly related to the integration degree of VLSI. According to the famous Moore's Law, the integration level of integrated circuits will double every 18 months. According to the prediction of the International Semiconductor Technology Roadmap (ITRS) published by the International Semiconductor Industry Association in 1999, by 2005, the 0.1μm photolithography technology will become mature, and the SiO2 used as the gate dielectric film in the corresponding MOSFET ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/08C23C14/46H01L21/283H01L21/316
Inventor 朱俊刘治国
Owner NANJING UNIV
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