48results about How to "Not to be broken down" patented technology

The invention discloses an MMC power module adopting double-bypass switches and an overvoltage three-bypass method. The MMC power module adopting the double-bypass switch comprises a first bypass switch and a second bypass switch, wherein the first bypass switch is connected with two ends of the MMC power module in parallel, when a capacitor voltage of the MMC power module exceeds a set safety value, the first bypass switch is closed, so the MMC power module is bypassed, when the MMC power module fails and refuses to operate, the second bypass switch receives a closing instruction, the secondbypass switch is closed, so the MMC power module is bypassed. The MMC power module is advantaged in that by arranging the two bypass switches, reliability of bypass of the power module is improved, and shutdown of a flexible direct current system caused by unreliable bypass of the power module is avoided.

The invention discloses a multi-level boosted circuit, and a device and a system thereof. TVS tubes are arranged between an output node and a first capacitor as well as between the output node and a second diode, and other auxiliary devices are matched, so that the problem that a lower arm switching tube is easy to break down during power-on can be solved, the breakdown problem of the second diodeunder the condition of low input voltage can also be solved, the model selection of related devices is easier, and the cost is lower; moreover, after corresponding devices are added to the circuit, the normal boosting process is not affected, the voltage at the output end is easy to control, Meanwhile, the probability of electric shock accidents when the input end is operated is also reduced.

The invention discloses a semiconductor voltage-stabilizing and rectifying integrated device. In the invention, a cathode of the core of a voltage-stabilizing diode and an anode of the core of a rectifying diode are tightly jointed together; aluminum sheet layers are adhered to the anode end of the core of the voltage-stabilizing diode and the cathode end of the core of the rectifying diode; a molybdenum electrode is adhered to the other end of each of aluminum sheet layers; the two molybdenum electrodes are connected with leads respectively; and the core of the voltage-stabilizing diode, thecore of the rectifying diode, the aluminum sheet layers and the molybdenum electrodes are packaged in the same shell. The integrated device of the invention has the combined functions of voltage-stabilizing tube and a rectifying tube, has the obviously advantages of small size, light weight and low manufacturing cost, has the advantage of use in circuits which are susceptible to generating surge voltage and surge current. The integrated circuit is particularly suitable to be used in highly integrated, small-sized and micro-sized electronic equipment and apparatus with a relay and a contactor.

The invention discloses a metal nanowire detector and method for measuring vacuum ultraviolet intensity. By means of the metal nanowire detector and method for measuring the vacuum ultraviolet intensity, a vacuum ultraviolet spectral signal is absolutely measured. The detector is composed of a multihole anodised alumina template with nanometer holes, and single substance metal on which single substance metal nanowires can grow is deposited inside the nanometer holes of the multihole anodised alumina template. The detector is used for measuring the 30-250eV ultraviolet signal intensity under the vacuum environment. The measuring method comprises the steps that a copper ring sheet serves as a positive electrode, the metal nanowire detector serves as a negative electrode, an insulating washer is inserted between the copper ring sheet and the metal nanowire detector, the negative electrode is connected with a current meter in series, and a DC stabilized power supply which can provide positive voltage or back bias voltage for the positive electrode and the negative electrode is additionally arranged in a measuring loop; the metal nanowire detector is demarcated through a transmission standard detector; the demarcated detector is placed at a corresponding position in the light intensity signal measuring light path layout; a light path system is started to provide the positive voltage or the back bias voltage for the positive electrode and the negative electrode; the light intensity signal is measured based on the full electron yield method, measuring is efficient, and the signal is stable.

The invention relates to a high-end PMOS power tube driving circuit, and the circuit comprises a high-end linear voltage stabilization module, a bias voltage generation module, a high-voltage level shift module and an output buffer module, wherein the high-end linear voltage stabilization module is used for generating a control level according to an input reference voltage signal VREF; the bias voltage generation module is used for generating a bias level and providing a bias voltage for the high-end linear voltage stabilization module and the high-voltage level shift module; and the high-voltage level shifting module is used for performing level shifting on the input first square wave control signal Pctrl and converting the input first square wave control signal Pctrl into a second square wave control signal Pctrl-hs to be output. And the output buffer module is used for charging or discharging the grid electrode of the high-end PMOS power tube according to the second square wave control signal P_ctrl-hs so as to control the high-end PMOS power tube to be turned on or turned off. According to the drive circuit, the gate-source voltage of the high-end PMOS power tube can be effectively controlled within the safety voltage, the high-end PMOS power tube is conducted to the maximum extent, and the conduction loss is reduced.

The invention discloses a system capable of performing electric leakage protection for a cable. The system comprises a cable body arranged underground. The outer side of the cable body is provided with a protective layer; a gap is formed between the cable body and the protective layer; the protective layer is protected and separated every 1km through a separator plate; one end of the separator plate is connected with the inner wall of the protective layer, and the other end of the separator plate is connected with the outer wall of the cable body; different alarm modules and detection modulesare arranged in the protective layers of the partitions, and a control center receives signals sent by the alarm modules, monitors the operation condition of the cable in real time and disconnects power transmission of the cable body after receiving the alarm signals of the alarm modules. And various detection modules and alarm modules are arranged in the gap between the cable body and the protective layer, so that the condition of the cable can be detected in time, the detected data can be sent to the control center in real time, and a worker of the control center can know the working condition of each section of the cable.

The invention relates to an air-switch working-state displaying device. The air-switch working-state displaying device comprises an air switch and three groups of displaying circuits with identical circuit structures; and in order to make up and overcome the defect of no working-state display existing in the traditional air switch, the working state of the air switch can be rapidly judged by additionally installing multiple simple electronic displaying circuits to provide favorable references for electricity users to clear faults and prevented from enlarging the range of the faults or generating electric-shock accidents due to the blind operation of the electricity users. The displaying circuits not only can be used as an upgrading device for the ordinary air switch, but also can be used for researching and developing new-style air switches by using the technical scheme of the displaying circuits.

The invention provides a technological method for electrostatically spraying 10-5017 blue epoxy powder on copper components. The method has the advantages that the components are preheated at the temperatures ranging from 100 DEG C to 104 DEG C for 5 minutes to 10 minutes, so that the thicknesses of electrostatically sprayed coatings can be effectively increased; the component preheating temperatures and various electrostatic spraying parameters are controlled, so that the thicknesses of the coatings can range from 101 micrometers to 254 micrometers under the control after the 10-5017 epoxy powder is electrostatically sprayed on bus bars, the maximum leakage currents of the bus bars with certain voltage withstand values are not higher than 0.83mA within 30 seconds under the conditions of frequencies of 50HZ and voltages of 1250V, and accordingly requirements of designers on the electrostatically sprayed coatings, with the 10-5017 blue epoxy powder, of the bus bars can be met.

The invention provides a silicon carbide MOSFET and a preparation method thereof. The silicon carbide MOSFET comprises a silicon carbide substrate, a first conductive type lightly doped epitaxial layer, a second conductive type lightly doped epitaxial layer, a contact region, a source region, a gate groove, a lightly doped injection region, a gate oxide layer, a gate, a dielectric layer, a metal electrode and a drain. According to the silicon carbide MOSFET, the first conductive type lightly doped injection region is arranged on the inner wall of the gate groove, so that the carrier concentration of a channel surface region can be effectively increased, the channel mobility is effectively improved, and the channel resistance is reduced.

The invention provides a three-phase AC motor power saver. A three-phase power supply is connected with three groups of output circuits respectively; after being connected in series, inductances L4 and L5 are connected an inductance L1 in parallel and connected with the A phase of the three-phase power supply; after being connected in series, inductances L6 and L7 are connected with an inductance L2 in parallel and connected with the B phase of the three-phase power supply; after being connected in series, inductances L8 and L9 are connected with an inductance L3 in parallel and connected with the C phase of the three-phase power supply; the invention has the advantages that the invention can avoid the breakdown of capacitors by adopting the technical proposal, has optimum compensation effect which is higher than the compensation index of the power factor in the prior art, effectively restrains the high harmonic generated by the motor, reduces the interference to the power network, and has simple structure, reliable works and obvious power-saving effect, etc.