41results about How to "Less prone to leakage" patented technology

The invention relates to a wearable finger detection device based on pressure and electromyographic signals. The device is characterized by comprising a pressure signal collecting fingerstall, a connecting band, an electromyographic collecting finger ring, a signal transmission data cable and a fixing band, wherein the pressure signal collecting fingerstall is matched with the fingertip of a finger to be tested in shape and is connected with the electromyographic collecting finger ring through the connecting band, and the fixing band is arranged on the other side of the electromyographic collecting finger ring; a pressure plate is arranged on the portion, for sensing stress, of the pressure signal collecting fingerstall, and pressure signals are output through the signal transmission data cable; an electrode patch is arranged on the portion, for sensing flexor tendon stress, of the electromyographic collecting finger ring, and flexor tendon stress signals are output through the signal transmission data cable. Pressure signals and electromyographic signals of the finger can be collected and detected at the same time, and the requirement for verifying the authenticity and objectivity of electromyographic signal output by taking a pressure signal detection result as auxiliary data is met.

The present invention provides stable unit dose compositions with enhanced pack rigidity. Such unit dose compositions comprise water, at least one non-aqueous solvent, an ethoxylated fatty acid, a beneficial composition, and a water-soluble container formed from a water-soluble or water-dispersible film material.

The invention discloses a process method of an SGT device. The method comprises the process steps of: 1, forming a trench type gate on a heavily doped semiconductor substrate, namely, forming a trenchon the substrate, then depositing a dielectric layer and a liner oxide layer, and then depositing polycrystalline silicon and etching back to form source polycrystalline silicon; 2, forming a thermaloxidation layer again; 3, depositing an oxide layer again by adopting an HDPCVD method; 4, removing the liner oxide layer at the upper part of the trench; and 5, depositing polycrystalline silicon and performing back etching to complete the manufacturing of the polycrystalline silicon gate at the upper part of the trench. According to the method, an HDPCVD process is added after the conventionalthermal oxide layer deposition process, so that the upper surface of the thermal oxide layer is flatter, the transition of a corner region of the trench is smoother, the defects of recesses on two sides, sharp corners and the like are avoided, and the situation of electric leakage between the polycrystalline silicon gate and a shielding electrode is not easily caused.

The invention provides a gear motor. The gear motor comprises a shell, a motor shaft, a motor assembly and a gear reduction mechanism, wherein a first installation cavity, a second installation cavityand an installation hole for communicating the first installation cavity and the second installation cavity are arranged in the shell; the motor shaft is arranged in the installation hole in a sleeved mode, at least one end of the motor shaft extends out of the shell, and the motor shaft and the shell can rotate relative to each other; the motor assembly is arranged in the first installation cavity, the motor assembly comprises a stator winding assembly and a rotor assembly, wherein the stator winding assembly is fixed on a motor shaft, and the rotor assembly is arranged outside the stator winding assembly in a sleeved mode; the gear reduction mechanism is arranged in the second installation cavity, the input end of the gear reduction mechanism penetrates through the installation hole andis connected to the rotor assembly, and the output end of the gear reduction mechanism is connected to the shell. According to the technical scheme, the motor assembly and the gear reduction mechanism are not prone to influence each other, so that the accelerated aging of the gear reduction mechanism is not easily caused due to the fact that the temperature rise of the motor assembly is too high,and the situation that lubricating oil on the gear reduction mechanism intrudes into the motor assembly is avoided.

The invention discloses an automatic spraying valve which is not easy to cause leaking and liquid mixing phenomena, and comprises a valve body and a valve core; two ends of a valve hole are respectively screwed with a joint seat I and a joint seat II, and a joint seat III is communicated with the valve hole; a ring washer is arranged at the bottom of a hole with larger diameter in stepped holes, and a sealing ring I is arranged between the ring washer and the joint seat I; the diameter of the middle section of a valve rod is large than the diameters of the front section and the rear section of the valve rod; the rear section of the valve rod penetrates through in sequence and is in sliding matching with the ring washer, the sealing ring Iand the joint seat I; the front section of the valve rod is provided with a spring; the inner end of the joint seat II is provided with a sealing ring II; the diameter of the front section of the valve rod is larger than the inner diameter of the sealing ring II; and the front end surface of the valve rod is directly applied on the sealing ring II so that the sealing ring II bears the pressing action, and the sealing I wraps the rear section of the valve rod all the time according to the elasticity, so that the sealing effect is good.

The present invention disclose a sliding-type control switch. The switch comprises a bottom case and a case cover, the inner cavity of the bottom case is provided with a first pedestal and a second pedestal, a clamping pole and a binding post are arranged at the top end of the first pedestal, a fixed hole is arranged at the top end of the binding post, the fixed hole is internally provided with a fixed pin, connection holes are symmetrically arranged at left and right side walls of the fixed hole, a jack is arranged in the top portion of the clamping pole, a base block and a binding post are arranged at the top end of the second pedestal, a chute is arranged at the top end of the base block, a slide block is arranged in the chute, one end, being close to the clamping pole, of the slide block is fixedly connected with an insertion rod matching a jack, the top end of the slide block is fixedly connected with a connection rod, and the other end of the connection rod passes through a sliding hole and fixedly connected with a sliding plate matching the case cover. The slide block and the insertion rod can effectively separate from a human being through the connection rod and the sliding plate, the usage process is safe and reliable, and the electric leakage phenomenon is not easy to happen so as to ensure human safety; the special structure design of the binding post allow the wire to be firmly fixed on the binding post so as to ensure the normal connection of a circuit.

The invention provides a method for forming a shallow trench isolation structure. After a first oxidation layer is formed through an SACVD (Sub-atmospheric Chemical Vapor Deposition) process, fragile surfaces in the first oxidation layer are eliminated by carrying out a dry method back-etching process, and subsequently a second oxidation layer is formed through an HDPCVD (High Density Plasma Chemical Vapor Deposition) process. Besides, after the first oxidation layer formed through the SACVD process, a thermal treatment process is carried out, and the first oxidation layer and the second oxidation layer formed through the HDPCVD process after the thermal treatment are closely approximate to a thermal oxide in density, so that the oxides inside the trench are consistent and matched in characteristics as a whole, and no difference is caused in later procedures. Therefore, the shallow trench isolation structure formed by using the method is good in isolation effect, a semiconductor with the shallow trench isolation structure is good in stability, and electric leakage and breakdown are unlikely to happen.

The invention discloses a wax liquid conveying and recycling system. The wax liquid conveying and recycling system comprises a heating stirring device, a first wax conveying pipe, a heat insulation stirring device and a second wax conveying pipe which are sequentially connected in the wax conveying direction. First heat insulation structures are arranged on the first wax conveying pipe and the second wax conveying pipe. By means of the wax liquid conveying and recycling system, the wax conveying efficiency is high, wax liquid can maintain good fluidity and a stable temperature range in the conveying process, and therefore the sealing performance of honey boluses obtained after wax dipping is improved.

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the steps of providing a substrate, wherein the substrate comprises an N-type transistor region and a P-type transistor region which are adjacent to each other; forming a work function layer on the substrate, wherein the work function layer comprises a P-type work function layer formed in the P-type transistor region and an N-type work function layer formed in the N-type transistor region; removing the work function layer at the junction of the N-type transistor region and the P-type transistor region to form an opening; and after the opening is formed, forming a gate layer crossing the N-type transistor region and the P-type transistor region on the substrate to form a P-type gatestructure with the remaining P-type work function layer and also form an N-type gate structure with the remaining N-type work function layer. According to the embodiment of the invention, the openingis formed, so that the N-type work function layer or the P-type work function layer is not liable to be located in different types of transistor regions, a process window for forming the work functionlayer is expanded, and the performance of the semiconductor structure is improved.