41results about How to "Less prone to leakage" patented technology

The invention relates to a high-dehydration hardenable plugging sealing agent which comprises the following components by mass percent: 35-50% of solidifying material, 25-35% of composite sealing agent, 5-15% of high-dehydration material, 5-10% of elastic expending material and 10-15% of fiber material, wherein the composite sealing agent is formed by mixing granular husk, mica and cotton seed hull in a mass ratio of 5:2:1; the solidifying material is formed by mixing gypsum, cement, blast furnace slag and sodium phosphate in a mass ratio of 1:1:0.5:0.1; the high-dehydration material is kieselguhr or coal ash; the elastic expending material is formed by mixing coated water-sucking rubber and coated water-sucking resin in a mass ratio of 1:1; and the fiber material is polyacrylonitrile fiber of 9-11mm. The sealing agent integrates with high dehydration, delay expanding, plugging solidification and physical overlap joint; and the formed sealing layer is not easy to destroy in the subsequent drilling process, thereby effectively improving the sealing efficiency.

The invention relates to a wearable finger detection device based on pressure and electromyographic signals. The device is characterized by comprising a pressure signal collecting fingerstall, a connecting band, an electromyographic collecting finger ring, a signal transmission data cable and a fixing band, wherein the pressure signal collecting fingerstall is matched with the fingertip of a finger to be tested in shape and is connected with the electromyographic collecting finger ring through the connecting band, and the fixing band is arranged on the other side of the electromyographic collecting finger ring; a pressure plate is arranged on the portion, for sensing stress, of the pressure signal collecting fingerstall, and pressure signals are output through the signal transmission data cable; an electrode patch is arranged on the portion, for sensing flexor tendon stress, of the electromyographic collecting finger ring, and flexor tendon stress signals are output through the signal transmission data cable. Pressure signals and electromyographic signals of the finger can be collected and detected at the same time, and the requirement for verifying the authenticity and objectivity of electromyographic signal output by taking a pressure signal detection result as auxiliary data is met.

The present invention provides stable unit dose compositions with enhanced pack rigidity. Such unit dose compositions comprise water, at least one non-aqueous solvent, an ethoxylated fatty acid, a beneficial composition, and a water-soluble container formed from a water-soluble or water-dispersible film material.

The invention relates to a self-cementing chemical plugging agent for well drilling and a preparation method thereof. Using bauxite, limestone and gypsum as raw materials, according to the mass ratio of 20-40 parts of bauxite, 30-60 parts of limestone, and 10-30 parts of gypsum, the intermediate product is fired at 1000-1500 °C, and the intermediate product is Grind, then mix with gypsum, limestone and quartz sand according to the mass ratio of 60-90 parts of intermediate products, 5-15 parts of gypsum, 5-20 parts of limestone, and 5-15 parts of quartz sand to obtain cemented chemical plugging agent products. The plugging agent has rich raw materials, low cost, simple preparation method and easy implementation, and its plugging effect is better than that of existing chemical plugging agents. It has wide applicable temperature range, fast plugging speed, strong pressure bearing capacity and is suitable Advantages of oil layer plugging.

The invention discloses a high-thermal-conductivity modified asphalt mixture based on carbon fibers and a preparation method thereof. The mixture comprises a three-dimensional heat conduction material, a styrene monomer, divinylbenzene, an initiator, epoxy resin, carboxyl silicone oil, epoxy asphalt, mineral fiber and aggregate. According to the asphalt mixture prepared by the invention, the defect that common carbon fibers can only conduct heat in a fixed direction is avoided, and the heat-conducting property of the asphalt mixture is further enhanced. Under the synergistic effect of high-speed electron irradiation and the initiator potassium persulfate, a polystyrene molecular chain generated by rapid polymerization is wound with an epoxy resin molecular chain, so that a stable molecularnetwork structure is formed in the asphalt mixture system; the asphalt mixture prepared by the invention is good in thermal conductivity and insulativity, excellent in mechanical property, not easy to generate an electric leakage phenomenon, high in safety, good in stability, not easy to generate layering and precipitation phenomena in standing, and very practical.

The invention designs an anti-fake bottle cap opened after being ejected, solving the technical problem that the existing anti-fake structures are not reasonable in design and have short ejection height, large twist-off force and poor anti-fake effects. The anti-fake bottle cap comprises an outer sleeve and an inner sleeve, wherein the inner sleeve is located in the outer sleeve with top. The anti-fake bottle cap is characterized in that a lead sleeve which carries out rotary transmission with the outer sleeve is arranged between the inner sleeve and the outer sleeve; the lead sleeve is provided with a spiral groove; an ejection part is arranged in the inner sleeve; the side wall of the ejection part is provided with a poking head and the upper end thereof is provided with a seal cap; the poking head runs through a vertical groove on the side wall of the inner wall and is matched with the spiral groove on the lead sleeve; and the outer sleeve rotates relative to the inner sleeve in single direction. The anti-fake bottle cap has the following advantages: the ejection height of the ejection part is long; the seal cap is convenient to open and close; the twist-off force is small; the ejection part no longer restores after being ejected and has obvious anti-fake effect; assembly is convenient; and the anti-fake structure is hidden inside, thus being not easy to damage or artificially destroy.

The present invention relates to self-cementing chemical leak-stopping agent for drilling well and its preparation process. The self-cementing chemical leak-stopping agent is prepared through mixing bauxite, lime stone and gypsum in the weight proportion of 20-40 to 30-60 to 10-30; baking the mixture at 1000-1500 deg.c to obtain intermediate product; grinding the intermediate product; and mixing the intermediate product, gypsum and lime stone and quartz sand in the weight proportion of 60-90 to 5-15 to 5-20 to 5-15 to obtain the chemical leak-stopping agent. The present invention has the advantages of rich material, low cost, simple preparation process, wide applicable temperature range, fast leak-stopping speed, high pressure bearing capacity and being suitable for stopping leak in oil reservoir.

The invention discloses a process method of an SGT device. The method comprises the process steps of: 1, forming a trench type gate on a heavily doped semiconductor substrate, namely, forming a trenchon the substrate, then depositing a dielectric layer and a liner oxide layer, and then depositing polycrystalline silicon and etching back to form source polycrystalline silicon; 2, forming a thermaloxidation layer again; 3, depositing an oxide layer again by adopting an HDPCVD method; 4, removing the liner oxide layer at the upper part of the trench; and 5, depositing polycrystalline silicon and performing back etching to complete the manufacturing of the polycrystalline silicon gate at the upper part of the trench. According to the method, an HDPCVD process is added after the conventionalthermal oxide layer deposition process, so that the upper surface of the thermal oxide layer is flatter, the transition of a corner region of the trench is smoother, the defects of recesses on two sides, sharp corners and the like are avoided, and the situation of electric leakage between the polycrystalline silicon gate and a shielding electrode is not easily caused.

The invention provides a method of preparing photoelectricity diode, the method includes providing a basis, and adulteration area is at the basis, besides, dielectric layer, the first polysilicon layer are formed on the basis. And an opening is formed to expose part of surface of adulteration area, then, the second polysilicon layer are formed above the first polysilicon layer and in the opening. And, the second polysilicon layer is patterned to form lead wire, the first polysilicon layer is patterned to form gate electrode, at last the source electrode and drain electrode are formed.

The invention provides a gear motor. The gear motor comprises a shell, a motor shaft, a motor assembly and a gear reduction mechanism, wherein a first installation cavity, a second installation cavityand an installation hole for communicating the first installation cavity and the second installation cavity are arranged in the shell; the motor shaft is arranged in the installation hole in a sleeved mode, at least one end of the motor shaft extends out of the shell, and the motor shaft and the shell can rotate relative to each other; the motor assembly is arranged in the first installation cavity, the motor assembly comprises a stator winding assembly and a rotor assembly, wherein the stator winding assembly is fixed on a motor shaft, and the rotor assembly is arranged outside the stator winding assembly in a sleeved mode; the gear reduction mechanism is arranged in the second installation cavity, the input end of the gear reduction mechanism penetrates through the installation hole andis connected to the rotor assembly, and the output end of the gear reduction mechanism is connected to the shell. According to the technical scheme, the motor assembly and the gear reduction mechanism are not prone to influence each other, so that the accelerated aging of the gear reduction mechanism is not easily caused due to the fact that the temperature rise of the motor assembly is too high,and the situation that lubricating oil on the gear reduction mechanism intrudes into the motor assembly is avoided.

The invention discloses a casting exhaust gas acid mist purification tower, relating to the technical field of exhaust gas treatment. The casting exhaust gas acid mist purification tower comprises a vertical spray pipe, a vertical spray head, horizontal spray pipes and horizontal spray heads. When acid mist is subjected to purification, the acid mist is firstly purified through a packing layer tobasically remove large particles of impurities; after passing through the packing layer, the acid mist comes into contact with spray liquid; the spray liquid first enters a liquid inlet pipe, then enters the vertical spray pipe from the liquid inlet pipe, and is sprayed horizontally through the vertical spray head on the vertical spray pipe; at the same time, the spray liquid in the vertical spraypipe also enters into each horizontal spray pipe and is sprayed down through the horizontal spray heads on the horizontal spray pipes. Since the horizontal spray pipes are evenly arranged in the circumferential direction of a tower body, the spray liquid is evenly and fully sprayed onto the top of the packing layer, and therefore, the acid mist is more fully contacted with the spray liquid afterpassing through the packing layer.

The invention discloses an anti-electric shock power distribution cabinet with flood prevention and disaster resistance functions, and belongs to the technical field of power distribution cabinets. The cabinet comprises a protective outer box, a waterproof door is hinged to the front surface of the protective outer box, the back surface of the waterproof door extends into the protective outer box,and a power distribution box body is fixedly mounted in the protective outer box. According to the scheme, supporting columns are fixedly mounted on the inner bottom wall of a waterproof ventilationbox, the top ends of the supporting columns extend to the top of a ventilation groove and is fixedly connected with a waterproof cover plate. The waterproof cover plate has a certain waterproof capability on the waterproof ventilation box, sponge layers are installed on the left side and the right side of the top of the waterproof ventilation box, and the tops of the two sponge layers are fixedlyconnected with the waterproof cover plate, so that the sponge layers have certain waterproof capacity while ventilation and dust prevention are achieved, the waterproof and anti-electric shock effectsof the device are relatively good, and the probability of dangerous accidents during flood disasters is reduced.

The invention discloses an automatic spraying valve which is not easy to cause leaking and liquid mixing phenomena, and comprises a valve body and a valve core; two ends of a valve hole are respectively screwed with a joint seat I and a joint seat II, and a joint seat III is communicated with the valve hole; a ring washer is arranged at the bottom of a hole with larger diameter in stepped holes, and a sealing ring I is arranged between the ring washer and the joint seat I; the diameter of the middle section of a valve rod is large than the diameters of the front section and the rear section of the valve rod; the rear section of the valve rod penetrates through in sequence and is in sliding matching with the ring washer, the sealing ring Iand the joint seat I; the front section of the valve rod is provided with a spring; the inner end of the joint seat II is provided with a sealing ring II; the diameter of the front section of the valve rod is larger than the inner diameter of the sealing ring II; and the front end surface of the valve rod is directly applied on the sealing ring II so that the sealing ring II bears the pressing action, and the sealing I wraps the rear section of the valve rod all the time according to the elasticity, so that the sealing effect is good.

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the steps of: providing a substrate, enabling the surface of the substrate to be provided with a gate structure, and enabling the interior of the substrate at two sides of the gate structure to be provided with source-drain doped regions; forming a protective layer on part of the side wallof the gate structure; forming a first dielectric layer on the substrate, the source-drain doped region and the side wall of the protective layer; removing part of the first dielectric layer until thetop surface of the source-drain doped region is exposed, and forming a contact hole in the first dielectric layer; and forming a plug in the contact hole. The semiconductor device formed by the method is good in performance.

The invention provides an electrostatic air purifier. The electrostatic air purifier comprises charged chambers (10), charged modules, and a dust removal chamber (20), wherein each charged chamber (10) is provided with air inlets (50) used for allowing air to flow in; each charged module is arranged in the corresponding charged chamber (10) and is used for enabling solid particle matters in the air to take negative charge; the dust removal chamber (20) communicates with the charged chambers (10); a dust removal module (200) is arranged in the dust removal chamber (20), and comprises a plurality of dust collecting plates, a plurality of high-voltage plates (3), and electrode lead-out devices; the dust collecting plates and the high-voltage plates (3) are in staggered arrangement; each high-voltage plate (3) is connected to a high-voltage source through the corresponding electrode lead-out device; each electrode lead-out device comprises a notch (35) formed in the edge of the corresponding high-voltage plate (3); conducting strips (34) are respectively arranged in the notches (35); each conducting strip (34) is electrically connected to the corresponding high-voltage plate (3); conducting elements (36) are respectively inserted in the notches (35); and the conducting strips (34) of the high-voltage plates (3) are in electric connection through the conducting elements (36).

The present invention disclose a sliding-type control switch. The switch comprises a bottom case and a case cover, the inner cavity of the bottom case is provided with a first pedestal and a second pedestal, a clamping pole and a binding post are arranged at the top end of the first pedestal, a fixed hole is arranged at the top end of the binding post, the fixed hole is internally provided with a fixed pin, connection holes are symmetrically arranged at left and right side walls of the fixed hole, a jack is arranged in the top portion of the clamping pole, a base block and a binding post are arranged at the top end of the second pedestal, a chute is arranged at the top end of the base block, a slide block is arranged in the chute, one end, being close to the clamping pole, of the slide block is fixedly connected with an insertion rod matching a jack, the top end of the slide block is fixedly connected with a connection rod, and the other end of the connection rod passes through a sliding hole and fixedly connected with a sliding plate matching the case cover. The slide block and the insertion rod can effectively separate from a human being through the connection rod and the sliding plate, the usage process is safe and reliable, and the electric leakage phenomenon is not easy to happen so as to ensure human safety; the special structure design of the binding post allow the wire to be firmly fixed on the binding post so as to ensure the normal connection of a circuit.

The invention provides a medicine bottle, comprising a bottle body, wherein the bottle body is rectangular, the bottle body is internally and evenly provided with N vertical clapboards along the length direction of the medicine bottle, and N is a natural number which is not less than 2, so that the bottle body is internally divided into N+1 independent cavities; and a bottle opening with the same specification is respectively arranged on the side wall of the upper side of the bottle body, which corresponds to each cavity, and a bottle cover is arranged on each bottle opening. The medicine bottle is internally divided into N+1 independent cavities, and each independent cavity is internally provided with a medicine, so that N+1 medicines can be put into one medicine bottle simultaneously, the medicine can be taken without searching the plurality of medicine bottles when the medicine is taken, and the missed medicine taking can be avoided, so that the medicine bottle is particularly suitable for people who is busy in work and the elder who is bad in memory. When the medicine bottle is carried, the requirement for carrying N+1 medicine simultaneously can be met only by one medicine bottle, so that the phenomena such as the missed medicine carrying and medicine taking can be avoided, and the medicine is convenient to use.

The adjustable valve comprises a valve body, a connecting column and a water inlet connecting port. A first sealing ring is connected to the upper end of the valve body, an upper pressing chuck is attached to the upper end of the first sealing ring, the connecting column penetrates the middle of the upper pressing chuck and the middle of the first sealing ring, and a valve element is axially and rotationally connected to the inner wall of the lower end of the connecting column. The water inlet connecting port is installed in one side of the valve body and one side of the valve element, and a water outlet connecting port is arranged on the other side of the lower end of the valve body and the other side of the lower end of the valve element. According to the adjustable valve, through the arrangement of the valve body, the valve element and the water outlet connecting port, the diameter of the valve element is larger than that of the communication part between the valve body and the water outlet connecting port, the joint between the valve body and the valve element is horizontally distributed, and when the valve element is attached to the inner wall of the valve body, the communication part of the valve body is blocked, so that the whole valve is in a closed state; and meanwhile, the bottom of the valve element and the inner wall of the valve body are both designed in a plain end mode, when the valve element seals the valve body, the sealing degree of the joint is high, and liquid leakage and other situations are not likely to happen.

The invention provides a method for forming a shallow trench isolation structure. After a first oxidation layer is formed through the SACVD technology, the dry etching technology is executed to eliminate a fragile face of the first oxidation layer, and then a second oxidation layer is formed through the SACVD technology. The shallow trench isolation structure formed with the method is good in isolation effect, and a semiconductor device comprising the shallow trench isolation structure is good in stability and not prone to electric leakage and breakdown. Besides, the hydrogen passivation technology is added, unsaturated bonds on the surface of a film can be eliminated with the hydrogen passivation technology, and thus the deposition rate of the subsequent technology is stable, and finally the thickness uniformity of the film is improved. Furthermore, the oxygen plasma processing technology is adopted, hydrogen bonds on the surface and the surface layer of the structure are effectively removed through O2 plasma to eliminate the Q-time effect of the deposition rate of the subsequent manufacturing process, and thus the structure is more stable before the deposition of the subsequent manufacturing process.

The invention provides a method for forming a shallow trench isolation structure. After a first oxidation layer is formed through an SACVD (Sub-atmospheric Chemical Vapor Deposition) process, fragile surfaces in the first oxidation layer are eliminated by carrying out a dry method back-etching process, and subsequently a second oxidation layer is formed through an HDPCVD (High Density Plasma Chemical Vapor Deposition) process. Besides, after the first oxidation layer formed through the SACVD process, a thermal treatment process is carried out, and the first oxidation layer and the second oxidation layer formed through the HDPCVD process after the thermal treatment are closely approximate to a thermal oxide in density, so that the oxides inside the trench are consistent and matched in characteristics as a whole, and no difference is caused in later procedures. Therefore, the shallow trench isolation structure formed by using the method is good in isolation effect, a semiconductor with the shallow trench isolation structure is good in stability, and electric leakage and breakdown are unlikely to happen.

The invention provides a method for forming a shallow trench isolation structure. The method comprises the following steps of forming a first oxide layer through an SACVD (sub-atmospheric chemical vapor deposition) process, then, executing a dry etching process to remove the weak surface of the first oxide layer, and then, forming a second oxide layer through the SACVD process. The isolation effect of the shallow trench isolation structure formed by the steps is good. A semiconductor device comprising the shallow trench isolation structure has the advantages that the stability is high, and electric leakage or breakdown is not easy to occur.

The invention discloses a wax liquid conveying and recycling system. The wax liquid conveying and recycling system comprises a heating stirring device, a first wax conveying pipe, a heat insulation stirring device and a second wax conveying pipe which are sequentially connected in the wax conveying direction. First heat insulation structures are arranged on the first wax conveying pipe and the second wax conveying pipe. By means of the wax liquid conveying and recycling system, the wax conveying efficiency is high, wax liquid can maintain good fluidity and a stable temperature range in the conveying process, and therefore the sealing performance of honey boluses obtained after wax dipping is improved.

The invention discloses a semiconductor structure and a forming method thereof. The forming method comprises the steps of providing a substrate, wherein the substrate comprises an N-type transistor region and a P-type transistor region which are adjacent to each other; forming a work function layer on the substrate, wherein the work function layer comprises a P-type work function layer formed in the P-type transistor region and an N-type work function layer formed in the N-type transistor region; removing the work function layer at the junction of the N-type transistor region and the P-type transistor region to form an opening; and after the opening is formed, forming a gate layer crossing the N-type transistor region and the P-type transistor region on the substrate to form a P-type gatestructure with the remaining P-type work function layer and also form an N-type gate structure with the remaining N-type work function layer. According to the embodiment of the invention, the openingis formed, so that the N-type work function layer or the P-type work function layer is not liable to be located in different types of transistor regions, a process window for forming the work functionlayer is expanded, and the performance of the semiconductor structure is improved.

The invention discloses a protection device for the safe charging of an electric automobile. The protection device comprises a charging pile shell, a display screen, a connector sealing groove body, acharging connector, an anti-collision fence, a sliding way, a pushing air cylinder, a shielding plate, a luminosity sensor, an illuminating lamp, a pulley, a filter screen, an exhaust fan, an air blower, a heater, an electric appliance mounting frame, a controller, a mainboard, a charger, a temperature sensor and a humidity sensor. The beneficial effect is that, the unrepairable damage phenomenonis effectively avoided. the charging connector is not easy to age, and the service life of the charging connector is long; the charging port is provided with a shielding device, so that the chargingport is not easy to leak electricity; the phenomenon that the charging pile is plugged into a socket by hand is avoided, and the safety of the charging pile used at night is effectively improved; thetemperature in the charging pile shell is reduced, and the burning phenomenon of electric appliances in the charging pile shell is effectively prevented; the drying efficiency in the charging pile shell is improved, and the short circuit phenomenon of electric appliances in the charging pile shell is effectively prevented.

Disclosed is a method for anodizing an aluminum pipe for a base of a photoconductor drum, characterized by bringing an electrolysis solution (6) into contact with the outer circumferential surface of an aluminum pipe (2) for a base of a photoconductor drum and, in this state, applying a high-frequency voltage of not less than 5 kHz to the electrolysis solution to conduct electrolysis and thus to form an anodic oxide film on the outer circumferential surface of the aluminum pipe (2). According to this method, an anodic oxide film can be formed on the surface of the pipe, and an aluminum pipe free from burr-shaped convex defects can be produced. Further, anodization for film formation can be carried out at a high speed, and an anodic oxide film, which causes no significant elution of an electrolyte, can be formed.

The invention discloses an ETFE casting film extrusion equipment for titanium mine, and belongs to the field of film processing device. The ETFE casting film extrusion equipment for the titanium mine comprises a driving mechanism and an extrusion mechanism, wherein a feeding hopper is installed at the outer side of the extrusion mechanism; a discharging pipe is installed at the outer side of the extrusion mechanism, and the bottom end of the discharging pipe penetrates through and is fixedly connected with a casting box; a discharging opening is formed in the bottom of the casting box; and two adjusting plates are connected to the interior of the casting box in a sliding manner, and the tops of the two adjusting plates are both tightly attached to the inner wall of the casting box. According to the extrusion equipment, the thickness and width of a film during discharging can be conveniently adjusted, the extrusion equipment can be conveniently used according to production requirements, and meanwhile, the temperature loss speed in the extrusion mechanism can be controlled, so that the heat preservation effect is achieved, meanwhile, rapid heating is facilitated, and the phenomenon of energy waste is reduced; and meanwhile, the whole equipment is convenient for a user to regularly and quickly replace and clean a filter disc, so that the use effect is ensured.

The invention provides a method for forming a shallow trench isolation structure. After a first oxidation layer is formed through the SACVD technology, the dry etching technology is executed to eliminate a fragile face of the first oxidation layer, and then a second oxidation layer is formed through the SACVD technology. The shallow trench isolation structure formed with the method is good in isolation effect, and a semiconductor device comprising the shallow trench isolation structure is good in stability and not prone to electric leakage and breakdown. Besides, the hydrogen passivation technology is added, unsaturated bonds on the surface of a film can be eliminated with the hydrogen passivation technology, and thus the deposition rate of the subsequent technology is stable, and finally the thickness uniformity of the film is improved. Furthermore, the oxygen plasma processing technology is adopted, hydrogen bonds on the surface and the surface layer of the structure are effectively removed through O2 plasma to eliminate the Q-time effect of the deposition rate of the subsequent manufacturing process, and thus the structure is more stable before the deposition of the subsequent manufacturing process.

The invention provides a forming method of a metal oxide semiconductor (MOS) device. The forming method comprises first providing a semiconductor substrate at least comprising three regions, enabling a first region to be used for forming a gate region, enabling a second region and a third region which are adjacent to the first region to be respectively used for forming a source region and a drain region; utilizing an epitaxial method to the semiconductor substrate of the first region to extend outwards to grow an epitaxial layer; then utilizing an isotropic etching method to etch the epitaxial layer to form a channel region; then utilizing the epitaxial method to grow silicon-germanium in the second region and the third region, and respectively forming a silicon-germanium source region structure and a drain region structure; and then doping the silicon-germanium source region structure and the drain region structure. The invention further provides the MOS device formed by utilizing the method. Due to the technical scheme, damage to a silicon substrate caused by etching of the source region and the drain region in a conventional method is avoided, the goal of reducing defects is achieved, and electric leakage of the formed MOS device in the using process cannot occur easily.

The invention provides a forming method of a metal oxide semiconductor (MOS) device. The forming method comprises first providing a semiconductor substrate at least comprising three regions, enabling a first region to be used for forming a gate region, enabling a second region and a third region which are adjacent to the first region to be respectively used for forming a source region and a drain region; utilizing an epitaxial method to the semiconductor substrate of the first region to extend outwards to grow an epitaxial layer; then utilizing an isotropic etching method to etch the epitaxial layer to form a channel region; then utilizing the epitaxial method to grow silicon-germanium in the second region and the third region, and respectively forming a silicon-germanium source region structure and a drain region structure; and then doping the silicon-germanium source region structure and the drain region structure. The invention further provides the MOS device formed by utilizing the method. Due to the technical scheme, damage to a silicon substrate caused by etching of the source region and the drain region in a conventional method is avoided, the goal of reducing defects is achieved, and electric leakage of the formed MOS device in the using process cannot occur easily.