32results about How to "Increase tuning speed" patented technology

Planar lenses and reflectors are described comprising subwavelength high-contrast gratings (HCG) having high index of refraction grating elements spaced apart from one another in straight and / or curved segments and surrounded by low index material. The high-contrast grating is configured to receive an incident wave which excites multiple modes within the high-contrast grating and is focused for reflection and / or transmission by said high contrast grating. The width of the high contrast grating bars vary along a distribution direction of the grating bars which is perpendicular to the length of the grating bars and / or varies along the length of one or more grating bars to focus said reflection and / or transmission. The HCG is configured to provide double focusing, whose use is exemplified within a vertical cavity surface emitting laser (VCSEL) structure using focusing HCG structures for both the top and bottom mirrors.

A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions / cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.

The invention discloses a semiconductor laser with wavelength capable of tuning without mode skip, which comprises a passive resonance cavity, a gain wave guide 2 and a passive wave guide 3. Only light wave of resonant wavelength of the passive resonance cavity can generate resonance in the laser with minimum consumption. A tuning zone exists in the laser, and the index of refraction of the tuning zone can be changed through exterior means, so that the resonant wavelength of the laser can be changed, and the aim of wavelength tuning can be realized. The tuning zone comprises a part of a thirdwave guide 11 of the passive resonance cavity and a part of a first wave guide 31 of the passive wave guide 3, and conformance of the tuning velocity on the tuning wavelength of the passive cavity and the tuning velocity on the tuning wavelength of the laser can be realized through properly selecting the length of the third wave guide 11 and the length of the first wave guide 31, so that tuning without mode skip on the laser wavelength can be realized only through changing the index of refraction of the tuning zone without any extra synchronous tuning mechanism.

The invention relates to the technical field of thermo-optical tuned filter, and discloses a photon crystal tunable filter, comprising a lower reflector, a separation wall and an upper reflector on the silicon on an insulation layer (SOI) and air ports through the upper reflector, the separation wall, the lower reflector and the top silicon of SOI. The invention also discloses a preparation methodfor the photon crystal tunable filter. With the method, the invention can reduce the uneven film temperature from the traditional heating of film resistance, lift the limit of the minimum size of input light spot caused by the diffraction loss, lower the consumption and the power of the tunable filter and accelerate the tuning speed of the tunable filter.

The invention relates to a superposed sequential setting method of inhibition band parallel reactor compensation line three-phase reclosing overvoltage, belonging to the power system relay protection technology field. The method comprises the following steps: by utilizing a WARD equivalent method, calculating equivalent impedances of a head end bus and a tail end bus of a fault line, and determining a large power supply side and a small power supply side; according to a terminal voltage size of a fault phase after trip-out, discriminating a fault property; when the fault is a transient fault, if line actual compensativity is less than critical compensativity, superposing the large power supply side, conversely, superposing the small power supply side; if the fault is a permanent fault, calculating an arithmetic product of a power frequency voltage step-up ratio when superposing the large power supply sides first and a healthy phase voltage step-up ratio caused by a single-phase ground fault, calculating an arithmetic product of a power frequency voltage step-up ratio when superposing the small power supply sides first and a healthy phase voltage step-up ratio caused by a single-phase ground fault, comparing the two arithmetic products, and superposing a side with a smeller arithmetic product. According to the method, line critical compensativity is only related to line length and a phase shift coefficient, raising superposed sequential setting speed in the transient fault is facilitated, amount of calculation is small, the method is simple and feasible, and a line single-phase fault can be reduced effectively to carry out overvoltage level of three-phase reclosing.

The invention belongs to the field of communication, and provides an adjustable resonant cavity based on an adjustable capacitance, including a metal cavity with a similar coaxial structure, an insulating dielectric ring, a ferroelectric film, a capacitor electrode and a tuning electrode; the metal cavity with a similar coaxial structure There is an open ring on the top, and the insulating medium ring is filled into the open ring; the ferroelectric film is set at the center above the metal cavity, and the radius is greater than or equal to the inner radius of the insulating medium ring; the tuning electrode is set at the center above the ferroelectric film; the capacitor electrode is The ring electrode is arranged around the tuning electrode, and the outer edge of the capacitor electrode is connected with the metal cavity, and the inner edge of the capacitor electrode forms a parallel capacitor plate structure with the ferroelectric thin film and the metal cavity. The present invention adopts the adjustable capacitor made of ferroelectric thin film; firstly, the problem of mechanical fatigue is avoided, and the service life of the resonant cavity is prolonged; secondly, the tuning voltage only needs to reach 30 volts, which makes tuning easier; finally, due to the ferroelectric material The extremely fast response speed also increases the tuning speed of the resonant cavity.

The invention discloses a wavelength-tunable double-ring structure plasmon laser based on a meta-material antenna. The laser comprises the components of a top patch antenna, a metal transmission wire,a meta-material antenna dielectric layer, a cladding of a laser resonant cavity, a silicon substrate, a semiconductor-insulator-metal stripe-carried sandwich structure based deep sub-wavelength plason waveguide (SIMS waveguide in short) and a metal split ring resonator array. According to the wavelength-tunable double-ring structure plasmon laser, the meta-material antenna is used as a modulatorand realizes high-efficiency modulation to the wavelength of the plasmon laser by means of a microwave in a sub-wavelength scale; and a resonant chamber with a double-ring structure is utilized for realizing tuning of wavelength output from the laser. The laser has advantages of compact structure, simple manufacture process and high controllability of output light. The novel meta-material photoelectric device in which microwave signal absorption and light wave modulation are integrated is constructed. A new technological principle and a new realizing approach are supplied for miniaturization and integration of a high-performance microwave photon device in future.

The invention provides a semiconductor magnetic sensor-based rapid tracking and tuning method for an Overhauser magnetometer. The method comprises the following steps of acquiring a rough value F of ageomagnetic field by utilizing the semiconductor magnetic sensor, and determining a value of f0 according to a relation between the geomagnetic field F and a frequency f0 of an FID signal; preliminarily determining a capacitance value C of a tuning capacitor of the Overhauser magnetometer according to the f0; and according to the obtained capacitance value C of the tuning capacitor, preliminarilydetermining an actual tuning capacitor value Cm of a tuning circuit, adjusting the actual tuning value Cm up and down, searching for an optimal tuning value C0, detecting a peak value of the FID signal according to a peak detector, and when the peak value is maximum, indicating that the circuit is in a resonance state, at the moment, determining that the tuning is successful, stopping the search,and then starting frequency measurement.