The present invention discloses resistance switch effect based non-volatilisation phase transition memory element physical design preparation method. It contains setting solid electrolyte RbAg 4I5 film between reaction electrode and non - reaction electrode to construct one miniature sandwich structure of memory unit, said memory unit together with substrate and insulating layer all having five layers, depositing single-layer non - reaction electrode on substrate, depositing single-layer insulating layer on non - reaction electrode, and etching one micro pore in it to expose non - reaction electrode, depositing single-layer RbAg 4I5 film on insulating layer, thereon depositing single-layer reaction electrode, respectively leading out leading wire on non - reaction electrode and reaction electrode. Said memory element has advantages of compactness, simple structure, non-volatilisation, rapid read-write, low operating voltage and energy consumption, non - moving part, and nondestructive readout etc.