The invention relates to a ferroelectric polarization regulated artificial synaptic device and a preparation method thereof. The method is characterized in that a two-dimensional semiconductor layer,a source / drain electrode, a ferroelectric functional layer and a gate electrode are sequentially prepared on a substrate to form a ferroelectric polarization regulated artificial synaptic structure, and the two-dimensional semiconductor is a MoS2 or WSe2 transition metal chalcogenide coating; the ferroelectric functional layer is a polyvinylidene fluoride-based ferroelectric polymer film; the preparation of the synaptic device comprises the preparation of an SiO2 / Si layer, the transition metal chalcogenide layer, a back gate structure, a polyvinylidene fluoride layer and a metal top gate electrode. Compared with the prior art, the artificial synaptic device has the advantages of ultra-low power consumption, long service life and the like, the organic ferroelectric transistor synapse has avery good prospect due to the characteristics, a large-scale neural structure network can be promoted to simulate a human brain, and large-scale parallelism and low-power-consumption operation in a human brain algorithm network can be enlightened.